JP2010287866A5 - - Google Patents

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Publication number
JP2010287866A5
JP2010287866A5 JP2009142806A JP2009142806A JP2010287866A5 JP 2010287866 A5 JP2010287866 A5 JP 2010287866A5 JP 2009142806 A JP2009142806 A JP 2009142806A JP 2009142806 A JP2009142806 A JP 2009142806A JP 2010287866 A5 JP2010287866 A5 JP 2010287866A5
Authority
JP
Japan
Prior art keywords
substrate
heat dissipation
dissipation plate
chip
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009142806A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010287866A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009142806A priority Critical patent/JP2010287866A/ja
Priority claimed from JP2009142806A external-priority patent/JP2010287866A/ja
Priority to CN2010101894925A priority patent/CN101924092A/zh
Priority to US12/801,209 priority patent/US8237261B2/en
Publication of JP2010287866A publication Critical patent/JP2010287866A/ja
Publication of JP2010287866A5 publication Critical patent/JP2010287866A5/ja
Pending legal-status Critical Current

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JP2009142806A 2009-06-15 2009-06-15 半導体装置 Pending JP2010287866A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009142806A JP2010287866A (ja) 2009-06-15 2009-06-15 半導体装置
CN2010101894925A CN101924092A (zh) 2009-06-15 2010-05-26 半导体器件
US12/801,209 US8237261B2 (en) 2009-06-15 2010-05-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009142806A JP2010287866A (ja) 2009-06-15 2009-06-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2010287866A JP2010287866A (ja) 2010-12-24
JP2010287866A5 true JP2010287866A5 (enExample) 2012-03-29

Family

ID=43305739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009142806A Pending JP2010287866A (ja) 2009-06-15 2009-06-15 半導体装置

Country Status (3)

Country Link
US (1) US8237261B2 (enExample)
JP (1) JP2010287866A (enExample)
CN (1) CN101924092A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012164846A (ja) * 2011-02-08 2012-08-30 Renesas Electronics Corp 半導体装置、半導体装置の製造方法、及び表示装置
JP2012164750A (ja) * 2011-02-04 2012-08-30 Canon Inc 電子機器
CN104022098B (zh) * 2014-05-29 2016-11-16 京东方科技集团股份有限公司 一种覆晶薄膜及显示装置
JP6561487B2 (ja) * 2015-02-16 2019-08-21 セイコーエプソン株式会社 発振回路、発振器、電子機器および移動体
JP7025948B2 (ja) * 2018-02-13 2022-02-25 ローム株式会社 半導体装置および半導体装置の製造方法
CN116569327A (zh) * 2020-12-09 2023-08-08 华为技术有限公司 封装结构及其制备方法、电子设备
KR20250131658A (ko) * 2024-02-27 2025-09-03 엘지디스플레이 주식회사 표시 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6432809B1 (en) * 2000-02-28 2002-08-13 International Business Machines Corporation Method for improved passive thermal flow in silicon on insulator devices
JP3510576B2 (ja) 2000-09-28 2004-03-29 Ｎｅｃエレクトロニクス株式会社 半導体装置及びその製造方法
JP2003282878A (ja) * 2002-03-20 2003-10-03 Citizen Watch Co Ltd 半導体装置およびその製造方法
JP2004095787A (ja) * 2002-08-30 2004-03-25 Mitsubishi Electric Corp 圧接型半導体装置
US7544883B2 (en) * 2004-11-12 2009-06-09 International Business Machines Corporation Integrated thermoelectric cooling devices and methods for fabricating same
US7098070B2 (en) * 2004-11-16 2006-08-29 International Business Machines Corporation Device and method for fabricating double-sided SOI wafer scale package with through via connections
JP2008203376A (ja) * 2007-02-19 2008-09-04 Matsushita Electric Ind Co Ltd 半導体装置、並びに表示装置

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