CN102239552B - 具有接合垫下方的沟槽的特征的rf器件和方法 - Google Patents

具有接合垫下方的沟槽的特征的rf器件和方法 Download PDF

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CN102239552B
CN102239552B CN200980148878.7A CN200980148878A CN102239552B CN 102239552 B CN102239552 B CN 102239552B CN 200980148878 A CN200980148878 A CN 200980148878A CN 102239552 B CN102239552 B CN 102239552B
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bond pad
substrate
active device
inclusion
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CN102239552A (zh
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杰弗里·K·琼斯
玛格丽特·A·希马诺夫斯基
米歇尔·L·米耶拉
任小伟
韦恩·R·布格尔
马克·A·贝内特
科林·克尔
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NXP USA Inc
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Freescale Semiconductor Inc
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN200980148878.7A 2008-12-04 2009-11-25 具有接合垫下方的沟槽的特征的rf器件和方法 Active CN102239552B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/328,319 2008-12-04
US12/328,319 US7998852B2 (en) 2008-12-04 2008-12-04 Methods for forming an RF device with trench under bond pad feature
PCT/US2009/065902 WO2010065415A2 (en) 2008-12-04 2009-11-25 Rf device and method with trench under bond pad feature

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CN102239552A CN102239552A (zh) 2011-11-09
CN102239552B true CN102239552B (zh) 2014-03-12

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US (2) US7998852B2 (enExample)
JP (1) JP5637632B2 (enExample)
CN (1) CN102239552B (enExample)
TW (1) TWI475653B (enExample)
WO (1) WO2010065415A2 (enExample)

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US8115321B2 (en) * 2009-04-30 2012-02-14 Lsi Corporation Separate probe and bond regions of an integrated circuit
US8492260B2 (en) * 2010-08-30 2013-07-23 Semionductor Components Industries, LLC Processes of forming an electronic device including a feature in a trench
US8242613B2 (en) 2010-09-01 2012-08-14 Freescale Semiconductor, Inc. Bond pad for semiconductor die
US9614590B2 (en) 2011-05-12 2017-04-04 Keyssa, Inc. Scalable high-bandwidth connectivity
JP5844472B2 (ja) 2011-09-15 2016-01-20 ケッサ・インコーポレーテッド 誘電媒体による無線通信
US8649820B2 (en) 2011-11-07 2014-02-11 Blackberry Limited Universal integrated circuit card apparatus and related methods
US9559790B2 (en) 2012-01-30 2017-01-31 Keyssa, Inc. Link emission control
USD703208S1 (en) 2012-04-13 2014-04-22 Blackberry Limited UICC apparatus
US8936199B2 (en) 2012-04-13 2015-01-20 Blackberry Limited UICC apparatus and related methods
USD701864S1 (en) 2012-04-23 2014-04-01 Blackberry Limited UICC apparatus
JP6154583B2 (ja) * 2012-06-14 2017-06-28 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
US8981533B2 (en) 2012-09-13 2015-03-17 Semiconductor Components Industries, Llc Electronic device including a via and a conductive structure, a process of forming the same, and an interposer
US9812354B2 (en) 2015-05-15 2017-11-07 Semiconductor Components Industries, Llc Process of forming an electronic device including a material defining a void
CN108313975B (zh) 2017-01-16 2019-12-13 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
US10896888B2 (en) 2018-03-15 2021-01-19 Microchip Technology Incorporated Integrated circuit (IC) device including a force mitigation system for reducing under-pad damage caused by wire bond

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US6621136B2 (en) * 2001-09-28 2003-09-16 Semiconductor Components Industries Llc Semiconductor device having regions of low substrate capacitance
CN1655338A (zh) * 2004-02-09 2005-08-17 半导体元件工业有限责任公司 具有减小的衬底电容的半导体器件和方法

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JP5637632B2 (ja) 2014-12-10
WO2010065415A2 (en) 2010-06-10
US7998852B2 (en) 2011-08-16
US20110266687A1 (en) 2011-11-03
TWI475653B (zh) 2015-03-01
US8134241B2 (en) 2012-03-13
WO2010065415A3 (en) 2010-08-12
TW201030912A (en) 2010-08-16
US20100140814A1 (en) 2010-06-10
CN102239552A (zh) 2011-11-09
JP2012511257A (ja) 2012-05-17

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