KR20060050794A - 반도체 장치 및 그 제조방법 - Google Patents

반도체 장치 및 그 제조방법 Download PDF

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Publication number
KR20060050794A
KR20060050794A KR1020050079848A KR20050079848A KR20060050794A KR 20060050794 A KR20060050794 A KR 20060050794A KR 1020050079848 A KR1020050079848 A KR 1020050079848A KR 20050079848 A KR20050079848 A KR 20050079848A KR 20060050794 A KR20060050794 A KR 20060050794A
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KR
South Korea
Prior art keywords
substrate
bump
electrodes
elasticity
bumps
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020050079848A
Other languages
English (en)
Korean (ko)
Inventor
다다또모 스가
토시히로 이토
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
다다또모 스가
오끼 덴끼 고오교 가부시끼가이샤
산요덴키가부시키가이샤
샤프 가부시키가이샤
닛폰 덴키 가부시키가이샤
로무 가부시키가이샤
소니 가부시끼 가이샤
가부시끼가이샤 도시바
후지쯔 가부시끼가이샤
마쓰시타 덴키 산교 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 르네사스 테크놀로지, 다다또모 스가, 오끼 덴끼 고오교 가부시끼가이샤, 산요덴키가부시키가이샤, 샤프 가부시키가이샤, 닛폰 덴키 가부시키가이샤, 로무 가부시키가이샤, 소니 가부시끼 가이샤, 가부시끼가이샤 도시바, 후지쯔 가부시끼가이샤, 마쓰시타 덴키 산교 가부시끼 가이샤 filed Critical 가부시끼가이샤 르네사스 테크놀로지
Publication of KR20060050794A publication Critical patent/KR20060050794A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/644—Elastic or compliant interconnections, e.g. springs, cantilevers or elastic pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01271—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/016—Manufacture or treatment of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07118—Means for cleaning, e.g. brushes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/253—Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding

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  • Wire Bonding (AREA)
KR1020050079848A 2004-08-30 2005-08-30 반도체 장치 및 그 제조방법 Ceased KR20060050794A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004250453A JP4050732B2 (ja) 2004-08-30 2004-08-30 半導体装置およびその製造方法
JPJP-P-2004-00250453 2004-08-30

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020060118387A Division KR100821574B1 (ko) 2004-08-30 2006-11-28 반도체 장치의 제조방법

Publications (1)

Publication Number Publication Date
KR20060050794A true KR20060050794A (ko) 2006-05-19

Family

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Application Number Title Priority Date Filing Date
KR1020050079848A Ceased KR20060050794A (ko) 2004-08-30 2005-08-30 반도체 장치 및 그 제조방법
KR1020060118387A Expired - Fee Related KR100821574B1 (ko) 2004-08-30 2006-11-28 반도체 장치의 제조방법

Family Applications After (1)

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KR1020060118387A Expired - Fee Related KR100821574B1 (ko) 2004-08-30 2006-11-28 반도체 장치의 제조방법

Country Status (5)

Country Link
US (2) US7268430B2 (enExample)
JP (1) JP4050732B2 (enExample)
KR (2) KR20060050794A (enExample)
CN (1) CN100437995C (enExample)
TW (1) TWI297185B (enExample)

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US7786588B2 (en) * 2006-01-31 2010-08-31 International Business Machines Corporation Composite interconnect structure using injection molded solder technique
JPWO2008041484A1 (ja) * 2006-09-26 2010-02-04 アルプス電気株式会社 弾性接触子を用いた金属端子間の接合方法
JP2008124355A (ja) * 2006-11-15 2008-05-29 Epson Imaging Devices Corp 半導体装置、異方性導電材、実装構造体、電気光学装置、突起電極の製造方法、異方性導電材の製造方法、及び、電子機器
US7793819B2 (en) * 2007-03-19 2010-09-14 Infineon Technologies Ag Apparatus and method for connecting a component with a substrate
US20080315388A1 (en) * 2007-06-22 2008-12-25 Shanggar Periaman Vertical controlled side chip connection for 3d processor package
JP4992604B2 (ja) * 2007-08-15 2012-08-08 株式会社ニコン 接合装置、接合方法
JP4548459B2 (ja) * 2007-08-21 2010-09-22 セイコーエプソン株式会社 電子部品の実装構造体
US8039960B2 (en) * 2007-09-21 2011-10-18 Stats Chippac, Ltd. Solder bump with inner core pillar in semiconductor package
JP5228479B2 (ja) * 2007-12-28 2013-07-03 富士通株式会社 電子装置の製造方法
JP5493399B2 (ja) * 2009-03-12 2014-05-14 株式会社ニコン 製造装置、及び、半導体装置の製造方法
JP5375950B2 (ja) * 2009-03-18 2013-12-25 コニカミノルタ株式会社 熱電変換素子
US8119926B2 (en) * 2009-04-01 2012-02-21 Advanced Interconnections Corp. Terminal assembly with regions of differing solderability
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US10784221B2 (en) * 2011-12-06 2020-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of processing solder bump by vacuum annealing
US9512863B2 (en) * 2012-04-26 2016-12-06 California Institute Of Technology Silicon alignment pins: an easy way to realize a wafer-to-wafer alignment
JP2013251405A (ja) * 2012-05-31 2013-12-12 Tadatomo Suga 金属領域を有する基板の接合方法
JP6032667B2 (ja) * 2012-08-31 2016-11-30 国立研究開発法人産業技術総合研究所 接合方法
KR20140038735A (ko) * 2012-09-21 2014-03-31 (주)호전에이블 패키지 모듈 및 그 제조 방법
JP6151925B2 (ja) * 2013-02-06 2017-06-21 ヤマハ発動機株式会社 基板固定装置、基板作業装置および基板固定方法
ITTO20150229A1 (it) * 2015-04-24 2016-10-24 St Microelectronics Srl Procedimento per produrre bump in componenti elettronici, componente e prodotto informatico corrispondenti
CN105472216B (zh) * 2015-12-01 2020-01-10 宁波舜宇光电信息有限公司 具有缓冲结构的电气支架及摄像模组
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Also Published As

Publication number Publication date
CN100437995C (zh) 2008-11-26
JP2006066809A (ja) 2006-03-09
US7776735B2 (en) 2010-08-17
US7268430B2 (en) 2007-09-11
US20060043552A1 (en) 2006-03-02
US20080254610A1 (en) 2008-10-16
KR20070008473A (ko) 2007-01-17
TWI297185B (en) 2008-05-21
KR100821574B1 (ko) 2008-04-15
CN1744306A (zh) 2006-03-08
TW200616128A (en) 2006-05-16
JP4050732B2 (ja) 2008-02-20

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