JP2005526384A5 - - Google Patents

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JP2005526384A5
JP2005526384A5 JP2003581267A JP2003581267A JP2005526384A5 JP 2005526384 A5 JP2005526384 A5 JP 2005526384A5 JP 2003581267 A JP2003581267 A JP 2003581267A JP 2003581267 A JP2003581267 A JP 2003581267A JP 2005526384 A5 JP2005526384 A5 JP 2005526384A5
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layer
device structure
microelectronic device
delta
band gap
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JP2003581267A
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JP2005526384A (ja
JP4916090B2 (ja
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Priority claimed from US10/107,001 external-priority patent/US7919791B2/en
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JP2003581267A 2002-03-25 2003-03-19 ドープｉｉｉ−ｖ族窒化物材料、ならびにそれを含む超小型電子デバイスおよびデバイス前駆体構造 Expired - Lifetime JP4916090B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/107,001 US7919791B2 (en) 2002-03-25 2002-03-25 Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
US10/107,001 2002-03-25
PCT/US2003/008355 WO2003083950A1 (en) 2002-03-25 2003-03-19 Doped group iii-v nitride materials, and microelectronic devices and device precursor structures comprising same

Publications (3)

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JP2005526384A JP2005526384A (ja) 2005-09-02
JP2005526384A5 true JP2005526384A5 (enExample) 2008-05-22
JP4916090B2 JP4916090B2 (ja) 2012-04-11

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JP2003581267A Expired - Lifetime JP4916090B2 (ja) 2002-03-25 2003-03-19 ドープｉｉｉ−ｖ族窒化物材料、ならびにそれを含む超小型電子デバイスおよびデバイス前駆体構造

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US (1) US7919791B2 (enExample)
EP (1) EP1488460B1 (enExample)
JP (1) JP4916090B2 (enExample)
KR (1) KR20040104959A (enExample)
CN (1) CN100375292C (enExample)
AU (1) AU2003224709A1 (enExample)
CA (1) CA2479657A1 (enExample)
TW (1) TW200306016A (enExample)
WO (1) WO2003083950A1 (enExample)

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