JP2010522435A5 - - Google Patents
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- Publication number
- JP2010522435A5 JP2010522435A5 JP2009554731A JP2009554731A JP2010522435A5 JP 2010522435 A5 JP2010522435 A5 JP 2010522435A5 JP 2009554731 A JP2009554731 A JP 2009554731A JP 2009554731 A JP2009554731 A JP 2009554731A JP 2010522435 A5 JP2010522435 A5 JP 2010522435A5
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- JP
- Japan
- Prior art keywords
- active layer
- semiconductor device
- layer
- flash
- disposed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000004065 semiconductor Substances 0.000 claims 35
- 238000000034 method Methods 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 8
- 239000000463 material Substances 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 4
- 229910002704 AlGaN Inorganic materials 0.000 claims 3
- 230000006911 nucleation Effects 0.000 claims 3
- 238000010899 nucleation Methods 0.000 claims 3
- 230000005533 two-dimensional electron gas Effects 0.000 claims 3
- 238000011010 flushing procedure Methods 0.000 claims 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/725,820 US20090321787A1 (en) | 2007-03-20 | 2007-03-20 | High voltage GaN-based heterojunction transistor structure and method of forming same |
| PCT/US2008/057613 WO2008116046A1 (en) | 2007-03-20 | 2008-03-20 | High voltage gan-based heterojunction transistor structure and method of forming same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010522435A JP2010522435A (ja) | 2010-07-01 |
| JP2010522435A5 true JP2010522435A5 (enExample) | 2011-04-28 |
Family
ID=39766447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009554731A Pending JP2010522435A (ja) | 2007-03-20 | 2008-03-20 | 高電圧ＧａＮベースヘテロ接合トランジスタ構造およびそれを形成する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090321787A1 (enExample) |
| EP (1) | EP2135285A4 (enExample) |
| JP (1) | JP2010522435A (enExample) |
| KR (1) | KR20090128505A (enExample) |
| CN (1) | CN101689563A (enExample) |
| WO (1) | WO2008116046A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5024307B2 (ja) * | 2009-02-06 | 2012-09-12 | 日立電線株式会社 | 電界効果型トランジスタ用窒化物半導体エピタキシャルウェハの製造方法 |
| JP2010206125A (ja) * | 2009-03-06 | 2010-09-16 | Oki Electric Ind Co Ltd | 窒化ガリウム系高電子移動度トランジスタ |
| CN102365747B (zh) * | 2009-04-08 | 2014-07-30 | 宜普电源转换公司 | 补偿门极misfet及其制造方法 |
| CN101710590B (zh) * | 2009-10-30 | 2011-12-07 | 西安电子科技大学 | AlGaN/GaN绝缘栅高电子迁移率晶体管的制作方法 |
| WO2011066862A1 (en) * | 2009-12-03 | 2011-06-09 | Epcos Ag | Bipolar transistor with lateral emitter and collector and method of production |
| PH12012501704B1 (en) * | 2010-05-28 | 2018-11-14 | Mjn Us Holdings Llc | Nutritional compositions |
| KR20130008295A (ko) * | 2011-07-12 | 2013-01-22 | 삼성전자주식회사 | 질화물 발광소자 |
| KR101256467B1 (ko) | 2012-02-06 | 2013-04-19 | 삼성전자주식회사 | 질화물계 이종접합 반도체 소자 및 그 제조 방법 |
| JP5777586B2 (ja) * | 2012-09-20 | 2015-09-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
| CN102923635B (zh) * | 2012-10-26 | 2015-06-03 | 中国科学院苏州纳米技术与纳米仿生研究所 | 纳米流体二极管及其制造方法 |
| CN103489968B (zh) * | 2013-09-09 | 2015-11-18 | 中国科学院半导体研究所 | 利用AlInGaN制作氮化镓外延薄膜的方法 |
| US9525063B2 (en) | 2013-10-30 | 2016-12-20 | Infineon Technologies Austria Ag | Switching circuit |
| US9048838B2 (en) * | 2013-10-30 | 2015-06-02 | Infineon Technologies Austria Ag | Switching circuit |
| JP6248359B2 (ja) * | 2013-12-20 | 2017-12-20 | 住友電工デバイス・イノベーション株式会社 | 半導体層の表面処理方法 |
| CN112930605B (zh) | 2018-09-07 | 2022-07-08 | 苏州晶湛半导体有限公司 | 半导体结构及其制备方法 |
| US11799000B1 (en) * | 2022-12-21 | 2023-10-24 | Hiper Semiconductor Inc. | High electron mobility transistor and high electron mobility transistor forming method |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6521961B1 (en) * | 2000-04-28 | 2003-02-18 | Motorola, Inc. | Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor |
| US6992319B2 (en) * | 2000-07-18 | 2006-01-31 | Epitaxial Technologies | Ultra-linear multi-channel field effect transistor |
| US6635559B2 (en) * | 2001-09-06 | 2003-10-21 | Spire Corporation | Formation of insulating aluminum oxide in semiconductor substrates |
| JP4134575B2 (ja) * | 2002-02-28 | 2008-08-20 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
| US7026665B1 (en) * | 2003-09-19 | 2006-04-11 | Rf Micro Devices, Inc. | High voltage GaN-based transistor structure |
| US7170111B2 (en) * | 2004-02-05 | 2007-01-30 | Cree, Inc. | Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same |
| US7547928B2 (en) * | 2004-06-30 | 2009-06-16 | Interuniversitair Microelektronica Centrum (Imec) | AlGaN/GaN high electron mobility transistor devices |
| EP1612866B1 (en) | 2004-06-30 | 2014-07-30 | Imec | AlGaN/GaN Hemt Devices |
| JP4514584B2 (ja) * | 2004-11-16 | 2010-07-28 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| US7456443B2 (en) * | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
| JP4912604B2 (ja) * | 2005-03-30 | 2012-04-11 | 住友電工デバイス・イノベーション株式会社 | 窒化物半導体ｈｅｍｔおよびその製造方法。 |
-
2007
- 2007-03-20 US US11/725,820 patent/US20090321787A1/en not_active Abandoned
-
2008
- 2008-03-20 CN CN200880009090A patent/CN101689563A/zh active Pending
- 2008-03-20 WO PCT/US2008/057613 patent/WO2008116046A1/en not_active Ceased
- 2008-03-20 KR KR1020097021919A patent/KR20090128505A/ko not_active Withdrawn
- 2008-03-20 EP EP08732543A patent/EP2135285A4/en not_active Withdrawn
- 2008-03-20 JP JP2009554731A patent/JP2010522435A/ja active Pending
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