JP2010522435A - 高電圧ＧａＮベースヘテロ接合トランジスタ構造およびそれを形成する方法 - Google Patents

高電圧ＧａＮベースヘテロ接合トランジスタ構造およびそれを形成する方法 Download PDF

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JP2010522435A
JP2010522435A JP2009554731A JP2009554731A JP2010522435A JP 2010522435 A JP2010522435 A JP 2010522435A JP 2009554731 A JP2009554731 A JP 2009554731A JP 2009554731 A JP2009554731 A JP 2009554731A JP 2010522435 A JP2010522435 A JP 2010522435A
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active layer
layer
semiconductor device
disposed
substrate
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JP2010522435A5 (enExample
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マーフィー，マイケル
ポフリスティック，ミラン
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ヴェロックス セミコンダクター コーポレーション
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009554731A 2007-03-20 2008-03-20 高電圧ＧａＮベースヘテロ接合トランジスタ構造およびそれを形成する方法 Pending JP2010522435A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/725,820 US20090321787A1 (en) 2007-03-20 2007-03-20 High voltage GaN-based heterojunction transistor structure and method of forming same
PCT/US2008/057613 WO2008116046A1 (en) 2007-03-20 2008-03-20 High voltage gan-based heterojunction transistor structure and method of forming same

Publications (2)

Publication Number Publication Date
JP2010522435A true JP2010522435A (ja) 2010-07-01
JP2010522435A5 JP2010522435A5 (enExample) 2011-04-28

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JP2009554731A Pending JP2010522435A (ja) 2007-03-20 2008-03-20 高電圧ＧａＮベースヘテロ接合トランジスタ構造およびそれを形成する方法

Country Status (6)

Country Link
US (1) US20090321787A1 (enExample)
EP (1) EP2135285A4 (enExample)
JP (1) JP2010522435A (enExample)
KR (1) KR20090128505A (enExample)
CN (1) CN101689563A (enExample)
WO (1) WO2008116046A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014063830A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 半導体装置及びその製造方法

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JP5024307B2 (ja) * 2009-02-06 2012-09-12 日立電線株式会社 電界効果型トランジスタ用窒化物半導体エピタキシャルウェハの製造方法
JP2010206125A (ja) * 2009-03-06 2010-09-16 Oki Electric Ind Co Ltd 窒化ガリウム系高電子移動度トランジスタ
CN102365747B (zh) * 2009-04-08 2014-07-30 宜普电源转换公司 补偿门极misfet及其制造方法
CN101710590B (zh) * 2009-10-30 2011-12-07 西安电子科技大学 AlGaN/GaN绝缘栅高电子迁移率晶体管的制作方法
WO2011066862A1 (en) * 2009-12-03 2011-06-09 Epcos Ag Bipolar transistor with lateral emitter and collector and method of production
PH12012501704B1 (en) * 2010-05-28 2018-11-14 Mjn Us Holdings Llc Nutritional compositions
KR20130008295A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 질화물 발광소자
KR101256467B1 (ko) 2012-02-06 2013-04-19 삼성전자주식회사 질화물계 이종접합 반도체 소자 및 그 제조 방법
CN102923635B (zh) * 2012-10-26 2015-06-03 中国科学院苏州纳米技术与纳米仿生研究所 纳米流体二极管及其制造方法
CN103489968B (zh) * 2013-09-09 2015-11-18 中国科学院半导体研究所 利用AlInGaN制作氮化镓外延薄膜的方法
US9525063B2 (en) 2013-10-30 2016-12-20 Infineon Technologies Austria Ag Switching circuit
US9048838B2 (en) * 2013-10-30 2015-06-02 Infineon Technologies Austria Ag Switching circuit
JP6248359B2 (ja) * 2013-12-20 2017-12-20 住友電工デバイス・イノベーション株式会社 半導体層の表面処理方法
CN112930605B (zh) 2018-09-07 2022-07-08 苏州晶湛半导体有限公司 半导体结构及其制备方法
US11799000B1 (en) * 2022-12-21 2023-10-24 Hiper Semiconductor Inc. High electron mobility transistor and high electron mobility transistor forming method

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US6635559B2 (en) * 2001-09-06 2003-10-21 Spire Corporation Formation of insulating aluminum oxide in semiconductor substrates
JP2003533024A (ja) * 2000-04-28 2003-11-05 モトローラ・インコーポレイテッド バリヤ層を使用する半導体デバイス
US20060108606A1 (en) * 2004-11-23 2006-05-25 Saxler Adam W Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
JP2006147663A (ja) * 2004-11-16 2006-06-08 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2006278812A (ja) * 2005-03-30 2006-10-12 Eudyna Devices Inc 半導体装置およびその製造方法並びにその半導体装置製造用基板およびその製造方法。

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US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
JP4134575B2 (ja) * 2002-02-28 2008-08-20 松下電器産業株式会社 半導体装置およびその製造方法
US7026665B1 (en) * 2003-09-19 2006-04-11 Rf Micro Devices, Inc. High voltage GaN-based transistor structure
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7547928B2 (en) * 2004-06-30 2009-06-16 Interuniversitair Microelektronica Centrum (Imec) AlGaN/GaN high electron mobility transistor devices
EP1612866B1 (en) 2004-06-30 2014-07-30 Imec AlGaN/GaN Hemt Devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003533024A (ja) * 2000-04-28 2003-11-05 モトローラ・インコーポレイテッド バリヤ層を使用する半導体デバイス
US6635559B2 (en) * 2001-09-06 2003-10-21 Spire Corporation Formation of insulating aluminum oxide in semiconductor substrates
JP2006147663A (ja) * 2004-11-16 2006-06-08 Fujitsu Ltd 化合物半導体装置及びその製造方法
US20060108606A1 (en) * 2004-11-23 2006-05-25 Saxler Adam W Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
JP2006278812A (ja) * 2005-03-30 2006-10-12 Eudyna Devices Inc 半導体装置およびその製造方法並びにその半導体装置製造用基板およびその製造方法。

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014063830A (ja) * 2012-09-20 2014-04-10 Toshiba Corp 半導体装置及びその製造方法

Also Published As

Publication number Publication date
EP2135285A4 (en) 2011-06-22
US20090321787A1 (en) 2009-12-31
CN101689563A (zh) 2010-03-31
EP2135285A1 (en) 2009-12-23
WO2008116046A1 (en) 2008-09-25
KR20090128505A (ko) 2009-12-15

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