KR20090128505A - 반도체 디바이스 및 반도체 디바이스 형성 방법 - Google Patents

반도체 디바이스 및 반도체 디바이스 형성 방법 Download PDF

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Publication number
KR20090128505A
KR20090128505A KR1020097021919A KR20097021919A KR20090128505A KR 20090128505 A KR20090128505 A KR 20090128505A KR 1020097021919 A KR1020097021919 A KR 1020097021919A KR 20097021919 A KR20097021919 A KR 20097021919A KR 20090128505 A KR20090128505 A KR 20090128505A
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South Korea
Prior art keywords
layer
active layer
semiconductor device
active
substrate
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KR1020097021919A
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English (en)
Korean (ko)
Inventor
마이클 머피
밀란 팝리스틱
Original Assignee
벨록스 세미컨덕터 코포레이션
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Publication of KR20090128505A publication Critical patent/KR20090128505A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020097021919A 2007-03-20 2008-03-20 반도체 디바이스 및 반도체 디바이스 형성 방법 Withdrawn KR20090128505A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/725,820 2007-03-20
US11/725,820 US20090321787A1 (en) 2007-03-20 2007-03-20 High voltage GaN-based heterojunction transistor structure and method of forming same

Publications (1)

Publication Number Publication Date
KR20090128505A true KR20090128505A (ko) 2009-12-15

Family

ID=39766447

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097021919A Withdrawn KR20090128505A (ko) 2007-03-20 2008-03-20 반도체 디바이스 및 반도체 디바이스 형성 방법

Country Status (6)

Country Link
US (1) US20090321787A1 (enExample)
EP (1) EP2135285A4 (enExample)
JP (1) JP2010522435A (enExample)
KR (1) KR20090128505A (enExample)
CN (1) CN101689563A (enExample)
WO (1) WO2008116046A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9087768B2 (en) 2012-02-06 2015-07-21 Samsung Electronics Co., Ltd. Nitride based heterojunction semiconductor device and manufacturing method thereof

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JP5024307B2 (ja) * 2009-02-06 2012-09-12 日立電線株式会社 電界効果型トランジスタ用窒化物半導体エピタキシャルウェハの製造方法
JP2010206125A (ja) * 2009-03-06 2010-09-16 Oki Electric Ind Co Ltd 窒化ガリウム系高電子移動度トランジスタ
WO2010118100A1 (en) * 2009-04-08 2010-10-14 Efficient Power Conversion Corporation Compensated gate misfet and method for fabricating the same
CN101710590B (zh) * 2009-10-30 2011-12-07 西安电子科技大学 AlGaN/GaN绝缘栅高电子迁移率晶体管的制作方法
DE112009005412B4 (de) * 2009-12-03 2021-09-16 Snaptrack, Inc. Transistor mit seitlichem Emitter und Kollektor und Herstellungsverfahren
MY175195A (en) * 2010-05-28 2020-06-15 Mjn Us Holdings Llc Nutritional compositions
KR20130008295A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 질화물 발광소자
JP5777586B2 (ja) * 2012-09-20 2015-09-09 株式会社東芝 半導体装置及びその製造方法
CN102923635B (zh) * 2012-10-26 2015-06-03 中国科学院苏州纳米技术与纳米仿生研究所 纳米流体二极管及其制造方法
CN103489968B (zh) * 2013-09-09 2015-11-18 中国科学院半导体研究所 利用AlInGaN制作氮化镓外延薄膜的方法
US9048838B2 (en) * 2013-10-30 2015-06-02 Infineon Technologies Austria Ag Switching circuit
US9525063B2 (en) 2013-10-30 2016-12-20 Infineon Technologies Austria Ag Switching circuit
JP6248359B2 (ja) * 2013-12-20 2017-12-20 住友電工デバイス・イノベーション株式会社 半導体層の表面処理方法
CN112930605B (zh) 2018-09-07 2022-07-08 苏州晶湛半导体有限公司 半导体结构及其制备方法
US11799000B1 (en) * 2022-12-21 2023-10-24 Hiper Semiconductor Inc. High electron mobility transistor and high electron mobility transistor forming method

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US6521961B1 (en) * 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
US6635559B2 (en) * 2001-09-06 2003-10-21 Spire Corporation Formation of insulating aluminum oxide in semiconductor substrates
JP4134575B2 (ja) * 2002-02-28 2008-08-20 松下電器産業株式会社 半導体装置およびその製造方法
US7026665B1 (en) * 2003-09-19 2006-04-11 Rf Micro Devices, Inc. High voltage GaN-based transistor structure
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
EP2273553B1 (en) 2004-06-30 2020-02-12 IMEC vzw A method for fabricating AlGaN/GaN HEMT devices
US7547928B2 (en) * 2004-06-30 2009-06-16 Interuniversitair Microelektronica Centrum (Imec) AlGaN/GaN high electron mobility transistor devices
JP4514584B2 (ja) * 2004-11-16 2010-07-28 富士通株式会社 化合物半導体装置及びその製造方法
US7456443B2 (en) * 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
JP4912604B2 (ja) * 2005-03-30 2012-04-11 住友電工デバイス・イノベーション株式会社 窒化物半導体ｈｅｍｔおよびその製造方法。

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9087768B2 (en) 2012-02-06 2015-07-21 Samsung Electronics Co., Ltd. Nitride based heterojunction semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
EP2135285A1 (en) 2009-12-23
WO2008116046A1 (en) 2008-09-25
US20090321787A1 (en) 2009-12-31
CN101689563A (zh) 2010-03-31
JP2010522435A (ja) 2010-07-01
EP2135285A4 (en) 2011-06-22

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Patent event date: 20091020

Patent event code: PA01051R01D

Comment text: International Patent Application

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N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20120906

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid