JP2019075558A5 - - Google Patents
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- JP2019075558A5 JP2019075558A5 JP2018189353A JP2018189353A JP2019075558A5 JP 2019075558 A5 JP2019075558 A5 JP 2019075558A5 JP 2018189353 A JP2018189353 A JP 2018189353A JP 2018189353 A JP2018189353 A JP 2018189353A JP 2019075558 A5 JP2019075558 A5 JP 2019075558A5
- Authority
- JP
- Japan
- Prior art keywords
- gate dielectric
- dielectric layer
- thickness
- layer
- active layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 20
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 238000011065 in-situ storage Methods 0.000 claims description 4
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000000231 atomic layer deposition Methods 0.000 claims 2
- 241000519695 Ilex integra Species 0.000 claims 1
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762571642P | 2017-10-12 | 2017-10-12 | |
| US62/571,642 | 2017-10-12 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019075558A JP2019075558A (ja) | 2019-05-16 |
| JP2019075558A5 true JP2019075558A5 (enExample) | 2021-11-04 |
| JP7330605B2 JP7330605B2 (ja) | 2023-08-22 |
Family
ID=64959072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018189353A Active JP7330605B2 (ja) | 2017-10-12 | 2018-10-04 | ヘテロ構造デバイスのためのゲートスタック |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11114539B2 (enExample) |
| EP (1) | EP3480854A3 (enExample) |
| JP (1) | JP7330605B2 (enExample) |
| CN (1) | CN109659361B (enExample) |
| TW (1) | TWI835753B (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11024545B2 (en) * | 2018-10-31 | 2021-06-01 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and method of manufacture |
| DE102019120692B4 (de) | 2019-07-31 | 2025-12-11 | Infineon Technologies Ag | Leistungshalbleitervorrichtung und Verfahren |
| CN112652535A (zh) * | 2020-12-22 | 2021-04-13 | 深圳市美浦森半导体有限公司 | 一种氮化镓异质结二极管制备方法及二极管 |
| CN113016074B (zh) * | 2021-02-19 | 2022-08-12 | 英诺赛科(苏州)科技有限公司 | 半导体器件 |
| CN114270533B (zh) | 2021-02-19 | 2024-01-02 | 英诺赛科(苏州)科技有限公司 | 半导体器件及其制造方法 |
| US12218232B2 (en) * | 2021-08-25 | 2025-02-04 | Kabushiki Kaisha Toshiba | Semiconductor device including compound and nitride members |
| TWI808477B (zh) | 2021-09-01 | 2023-07-11 | 奈盾科技股份有限公司 | 半導體裝置的製造方法 |
| US12243936B2 (en) | 2021-12-28 | 2025-03-04 | Raytheon Company | AIN channel heterostructure field effect transistor |
| US20240047529A1 (en) * | 2022-08-08 | 2024-02-08 | Texas Instruments Incorporated | Gan devices with modified heterojunction structure and methods of making thereof |
| WO2025004581A1 (ja) * | 2023-06-28 | 2025-01-02 | ソニーセミコンダクタソリューションズ株式会社 | 高電子移動度トランジスタ、ｒｆスイッチ回路、パワーアンプ回路および無線通信端末 |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020197835A1 (en) | 2001-06-06 | 2002-12-26 | Sey-Ping Sun | Anti-reflective coating and methods of making the same |
| EP2267783B1 (en) | 2001-07-24 | 2017-06-21 | Cree, Inc. | Insulating gate algan/gan hemt |
| JP3871607B2 (ja) | 2001-12-14 | 2007-01-24 | 松下電器産業株式会社 | 半導体素子およびその製造方法 |
| JP4221697B2 (ja) | 2002-06-17 | 2009-02-12 | 日本電気株式会社 | 半導体装置 |
| JP2004087587A (ja) | 2002-08-23 | 2004-03-18 | Mitsubishi Electric Corp | 窒化物半導体装置およびその製造方法 |
| US7253015B2 (en) | 2004-02-17 | 2007-08-07 | Velox Semiconductor Corporation | Low doped layer for nitride-based semiconductor device |
| JP4398780B2 (ja) | 2004-04-30 | 2010-01-13 | 古河電気工業株式会社 | ＧａＮ系半導体装置 |
| US7547928B2 (en) | 2004-06-30 | 2009-06-16 | Interuniversitair Microelektronica Centrum (Imec) | AlGaN/GaN high electron mobility transistor devices |
| KR100889362B1 (ko) | 2004-10-19 | 2009-03-18 | 삼성전자주식회사 | 다층 유전체막으로 이루어진 트랜지스터 및 그 제조 방법 |
| US7456443B2 (en) | 2004-11-23 | 2008-11-25 | Cree, Inc. | Transistors having buried n-type and p-type regions beneath the source region |
| JP2006245317A (ja) | 2005-03-03 | 2006-09-14 | Fujitsu Ltd | 半導体装置およびその製造方法 |
| US8482035B2 (en) | 2005-07-29 | 2013-07-09 | International Rectifier Corporation | Enhancement mode III-nitride transistors with single gate Dielectric structure |
| EP1938385B1 (en) | 2005-09-07 | 2014-12-03 | Cree, Inc. | Transistors with fluorine treatment |
| JP5032145B2 (ja) | 2006-04-14 | 2012-09-26 | 株式会社東芝 | 半導体装置 |
| US8399911B2 (en) | 2006-06-07 | 2013-03-19 | Imec | Enhancement mode field effect device and the method of production thereof |
| US7939853B2 (en) | 2007-03-20 | 2011-05-10 | Power Integrations, Inc. | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
| JP2009032796A (ja) | 2007-07-25 | 2009-02-12 | Rohm Co Ltd | 窒化物半導体素子および窒化物半導体素子の製造方法 |
| JP4584293B2 (ja) | 2007-08-31 | 2010-11-17 | 富士通株式会社 | 窒化物半導体装置、ドハティ増幅器、ドレイン電圧制御増幅器 |
| CN100594591C (zh) | 2007-10-17 | 2010-03-17 | 中国科学院微电子研究所 | 一种提高氮化镓基场效应晶体管性能的方法 |
| CN101459080B (zh) | 2007-12-12 | 2010-04-14 | 中国科学院微电子研究所 | 一种制作氮化镓基场效应晶体管的方法 |
| JP5301208B2 (ja) * | 2008-06-17 | 2013-09-25 | 日本電信電話株式会社 | 半導体装置 |
| US8309987B2 (en) | 2008-07-15 | 2012-11-13 | Imec | Enhancement mode semiconductor device |
| US7985986B2 (en) | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
| US7968913B2 (en) * | 2008-12-08 | 2011-06-28 | National Semiconductor Corporation | CMOS compatable fabrication of power GaN transistors on a <100> silicon substrate |
| US8168486B2 (en) | 2009-06-24 | 2012-05-01 | Intersil Americas Inc. | Methods for manufacturing enhancement-mode HEMTs with self-aligned field plate |
| WO2010151721A1 (en) | 2009-06-25 | 2010-12-29 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Transistor with enhanced channel charge inducing material layer and threshold voltage control |
| US9991360B2 (en) | 2009-06-26 | 2018-06-05 | Cornell University | Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation |
| US9105703B2 (en) | 2010-03-22 | 2015-08-11 | International Rectifier Corporation | Programmable III-nitride transistor with aluminum-doped gate |
| JP5635803B2 (ja) | 2010-05-07 | 2014-12-03 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置の製造方法及び化合物半導体装置 |
| WO2012083590A1 (en) * | 2010-12-20 | 2012-06-28 | The Hong Kong University Of Science And Technology | Power semiconductor field effect transistor structure with charge trapping material in the gate dielectric |
| JP5758132B2 (ja) | 2011-01-26 | 2015-08-05 | 株式会社東芝 | 半導体素子 |
| JP5648523B2 (ja) | 2011-02-16 | 2015-01-07 | 富士通株式会社 | 半導体装置、電源装置、増幅器及び半導体装置の製造方法 |
| US9076853B2 (en) | 2011-03-18 | 2015-07-07 | International Rectifie Corporation | High voltage rectifier and switching circuits |
| US9070758B2 (en) * | 2011-06-20 | 2015-06-30 | Imec | CMOS compatible method for manufacturing a HEMT device and the HEMT device thereof |
| US20130099284A1 (en) | 2011-10-20 | 2013-04-25 | Triquint Semiconductor, Inc. | Group iii-nitride metal-insulator-semiconductor heterostructure field-effect transistors |
| US8633094B2 (en) * | 2011-12-01 | 2014-01-21 | Power Integrations, Inc. | GaN high voltage HFET with passivation plus gate dielectric multilayer structure |
| WO2013095643A1 (en) * | 2011-12-23 | 2013-06-27 | Intel Corporation | Iii-n material structure for gate-recessed transistors |
| CN102723358B (zh) | 2012-05-30 | 2015-01-07 | 苏州能讯高能半导体有限公司 | 绝缘栅场效应晶体管及其制造方法 |
| US20140077266A1 (en) * | 2012-09-14 | 2014-03-20 | Power Integrations, Inc. | Heterostructure Transistor with Multiple Gate Dielectric Layers |
| CN103134476B (zh) | 2013-01-28 | 2014-12-03 | 中国科学院研究生院 | 一种基于水平集算法的海陆分界线检测方法 |
| US8928037B2 (en) | 2013-02-28 | 2015-01-06 | Power Integrations, Inc. | Heterostructure power transistor with AlSiN passivation layer |
| US20160204207A1 (en) * | 2013-09-27 | 2016-07-14 | Intel Corporation | Composite High-K Metal Gate Stack for Enhancement Mode GaN Semiconductor Devices |
| JP6301640B2 (ja) * | 2013-11-28 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| US10002958B2 (en) * | 2016-06-08 | 2018-06-19 | The United States Of America, As Represented By The Secretary Of The Navy | Diamond on III-nitride device |
| KR102698026B1 (ko) * | 2016-09-28 | 2024-08-21 | 삼성전자주식회사 | 유전막 형성 방법 및 반도체 장치의 제조 방법 |
-
2017
- 2017-11-30 CN CN201711242043.0A patent/CN109659361B/zh active Active
-
2018
- 2018-10-04 JP JP2018189353A patent/JP7330605B2/ja active Active
- 2018-10-04 TW TW107135062A patent/TWI835753B/zh active
- 2018-10-11 EP EP18199806.3A patent/EP3480854A3/en active Pending
- 2018-10-12 US US16/158,560 patent/US11114539B2/en active Active
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