JP2019075558A - ヘテロ構造デバイスのためのゲートスタック - Google Patents
ヘテロ構造デバイスのためのゲートスタック Download PDFInfo
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- JP2019075558A JP2019075558A JP2018189353A JP2018189353A JP2019075558A JP 2019075558 A JP2019075558 A JP 2019075558A JP 2018189353 A JP2018189353 A JP 2018189353A JP 2018189353 A JP2018189353 A JP 2018189353A JP 2019075558 A JP2019075558 A JP 2019075558A
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- gate dielectric
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- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910002601 GaN Inorganic materials 0.000 claims description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 14
- 238000011065 in-situ storage Methods 0.000 claims description 14
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 239000010936 titanium Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001258 titanium gold Inorganic materials 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- -1 nitride compounds Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Abstract
Description
Claims (26)
- 第1の活性層と、
前記第1の活性層上に位置する第2の活性層であって、二次元電子気体層が、前記第1の活性層と前記第2の活性層との間に形成される、前記第2の活性層と、
前記第2の活性層上に位置するサンドウィッチゲート誘電体層構造物と、
前記サンドウィッチゲート誘電体層構造物の上方に位置するパッシベーション層と、
前記パッシベーション層を通って前記サンドウィッチゲート誘電体層構造物の上部まで延びたゲートと、
前記第2の活性層に電気的に接続する第1および第2のオーミック接点であって、前記第1のオーミック接点と前記第2のオーミック接点とが、横方向に離隔され、前記ゲートが、前記第1のオーミック接点と前記第2のオーミック接点との間に位置する、前記第1および第2のオーミック接点と、
を備える、ヘテロ構造半導体デバイス。 - 前記サンドウィッチゲート誘電体層構造物が、
前記第2の活性層上に位置する第1のゲート誘電体層と、
前記第1のゲート誘電体層上に位置する第2のゲート誘電体層と、
前記第2のゲート誘電体層上に位置する第3のゲート誘電体層と、
を備える、
請求項1に記載のヘテロ構造半導体デバイス。 - 前記第3のゲート誘電体層が、酸化アルミニウム(Al2O3)を含む、
請求項2に記載のヘテロ構造半導体デバイス。 - 前記第1のゲート誘電体層が、第1の厚さをもち、
前記第2のゲート誘電体層が、第2の厚さをもち、
前記第3のゲート誘電体層が、第3の厚さをもち、
前記第2の厚さが、前記第1の厚さおよび前記第3の厚さより大きい、
請求項2に記載のヘテロ構造半導体デバイス。 - 前記第1のゲート誘電体層が、窒化物ベースの化合物を含む、
請求項2に記載のヘテロ構造半導体デバイス。 - 前記第1のゲート誘電体層が、窒化ケイ素(SiN)を含む、
請求項2に記載のヘテロ構造半導体デバイス。 - 前記第1のゲート誘電体層が、窒化炭素(CN)を含む、
請求項2に記載のヘテロ構造半導体デバイス。 - 前記第1のゲート誘電体層が、窒化ホウ素(BN)を含む、
請求項2に記載のヘテロ構造半導体デバイス。 - 前記第1のゲート誘電体層と前記第2のゲート誘電体層とが、同じ材料を含む、
請求項2に記載のヘテロ構造半導体デバイス。 - 前記第1のゲート誘電体層が、約1〜5ナノメートルの厚さの範囲内の第1の厚さをもち、
前記第2のゲート誘電体が、約20〜60ナノメートルの範囲内の第2の厚さをもち、
前記第3のゲート誘電体が、10〜20ナノメートルの範囲内の第3の厚さをもつ、
請求項2に記載のヘテロ構造半導体デバイス。 - 前記ゲートを通る漏れ電流がヘテロ接合半導体デバイスの通常動作中に温度に対して実質的に一定であるように、前記第1の厚さ、前記第2の厚さ、および前記第3の厚さが設定された、
請求項9に記載のヘテロ構造半導体デバイス。 - 閾値電圧がヘテロ接合半導体デバイスの通常動作中に温度に対して実質的に一定であるように、前記第1の厚さ、前記第2の厚さ、および前記第3の厚さが設定された、
請求項9に記載のヘテロ構造半導体デバイス。 - 前記第1の活性層が、窒化ガリウム(GaN)を含み、
前記第2の活性層が、アルミニウムガリウム窒化物(AlGaN)を含む、
請求項1に記載のヘテロ構造半導体デバイス。 - 前記ゲート金属が、前記ドレインオーミック接点に向けて延びたゲートフィールドプレートを含む、
請求項15に記載のヘテロ構造半導体デバイス。 - 前記パッシベーション層が、窒化ケイ素(SiN)を含む、
請求項1に記載のヘテロ構造半導体デバイス。 - 基材上に第1の活性層を形成することと、
前記第1の活性層上に第2の活性層を形成することであって、
二次元電子気体層が前記第1の活性層と前記第2の活性層との間に形成されるように、前記第1の活性層と前記第2の活性層とが異なるバンドギャップをもつ、
前記第2の活性層を形成することと、
前記第2の活性層上に第1のゲート誘電体層を形成することであって、
前記第1のゲート誘電体層が、第1の厚さをもつ、
前記第1のゲート誘電体層を形成することと、
前記第1のゲート誘電体層上に第2のゲート誘電体層を形成することであって、
前記第2のゲート誘電体層が、前記第1の厚さより大きな第2の厚さをもつ、
前記第2のゲート誘電体層を形成することと、
前記第2のゲート誘電体層上に第3のゲート誘電体層を形成することであって、
前記第3のゲート誘電体層が、前記第2の厚さより小さく、前記第1の厚さより大きな第3の厚さをもつ、
前記第3のゲート誘電体層を形成することと、
前記第3のゲート誘電体層と前記第2のゲート誘電体層と前記第1のゲート誘電体層とを通って縦方向に各々が延びた第1および第2のオーミック接点を形成することであって、
前記第1のオーミック接点と前記第2のオーミック接点とが、横方向に離隔されて、前記第2の活性層に電気的に接続する、
前記第1および第2のオーミック接点を形成することと、
前記第1のオーミック接点と前記第2のオーミック接点との間の横方向位置において前記第3のゲート誘電体層に接触するゲートを形成することと、
を含む、ヘテロ構造半導体デバイスを製造する方法。 - 前記第1のオーミック接点と前記第2のオーミック接点とを形成する前に、前記第3のゲート誘電体層の上方にパッシベーション層を堆積および形成することをさらに含む、
請求項16に記載の方法。 - 前記第1のオーミック接点と前記第2のオーミック接点とをアニーリングすることをさらに含む、
請求項16に記載の方法。 - 前記ヘテロ構造半導体デバイスの正常動作中の温度にわたってゲート・ソース漏れ電流が実質的に一定に留まるように、前記第1の厚さ、前記第2の厚さ、および前記第3の厚さが選択される、
請求項16に記載の方法。 - 前記第1のゲート誘電体層と前記第2のゲート誘電体層とが、窒化ケイ素を含む、
請求項16に記載の方法。 - 前記第2のゲート誘電体層が、酸化アルミニウムを含む、
請求項20に記載の方法。 - 前記第1のゲート誘電体層と前記第2のゲート誘電体層とが、前記第1の活性層および前記第2の活性層とインサイチュで形成される、
請求項16に記載の方法。 - 前記第1のゲート誘電体層が、前記第1の活性層および前記第2の活性層とインサイチュで形成され、
前記第2のゲート誘電体層が、前記第1の活性層および前記第2の活性層とイクサイチュで形成される、
請求項16に記載の方法。 - 前記第1の厚さが、約1〜5ナノメートルの範囲にある、
請求項16に記載の方法。 - 前記第2の厚さが、約30〜40ナノメートルの範囲内にある、
請求項24に記載の方法。 - 前記第3の厚さが、10〜20ナノメートルの範囲内にある、
請求項25に記載の方法。
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