JP2005519347A - 最大開口型の投影対物レンズ - Google Patents
最大開口型の投影対物レンズ Download PDFInfo
- Publication number
- JP2005519347A JP2005519347A JP2003575189A JP2003575189A JP2005519347A JP 2005519347 A JP2005519347 A JP 2005519347A JP 2003575189 A JP2003575189 A JP 2003575189A JP 2003575189 A JP2003575189 A JP 2003575189A JP 2005519347 A JP2005519347 A JP 2005519347A
- Authority
- JP
- Japan
- Prior art keywords
- projection objective
- lens
- meniscus
- image
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 60
- 238000003384 imaging method Methods 0.000 claims abstract description 12
- 230000005499 meniscus Effects 0.000 claims description 86
- 239000000463 material Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 230000004075 alteration Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 10
- 238000012937 correction Methods 0.000 description 8
- 238000013461 design Methods 0.000 description 7
- 238000007654 immersion Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 206010010071 Coma Diseases 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B9/00—Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or -
- G02B9/60—Optical objectives characterised both by the number of the components and their arrangements according to their sign, i.e. + or - having five components only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Lenses (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10210899A DE10210899A1 (de) | 2002-03-08 | 2002-03-08 | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| PCT/EP2002/004846 WO2003077036A1 (de) | 2002-03-08 | 2002-05-03 | Projektionsobjektiv höchster apertur |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2005519347A true JP2005519347A (ja) | 2005-06-30 |
Family
ID=27762884
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003575189A Pending JP2005519347A (ja) | 2002-03-08 | 2002-05-03 | 最大開口型の投影対物レンズ |
| JP2003575190A Pending JP2005519348A (ja) | 2002-03-08 | 2003-02-26 | 液浸リソグラフィ用の屈折投影対物レンズ |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003575190A Pending JP2005519348A (ja) | 2002-03-08 | 2003-02-26 | 液浸リソグラフィ用の屈折投影対物レンズ |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US6891596B2 (enExample) |
| EP (2) | EP1483625A1 (enExample) |
| JP (2) | JP2005519347A (enExample) |
| KR (1) | KR100991590B1 (enExample) |
| CN (1) | CN100573222C (enExample) |
| AU (2) | AU2002312872A1 (enExample) |
| DE (1) | DE10210899A1 (enExample) |
| WO (2) | WO2003077036A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010527160A (ja) * | 2007-05-14 | 2010-08-05 | カール・ツァイス・エスエムティー・アーゲー | マイクロリソグラフィ用投影対物器械及び投影露光装置 |
Families Citing this family (262)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7187503B2 (en) | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
| US7203007B2 (en) * | 2000-05-04 | 2007-04-10 | Carl Zeiss Smt Ag | Projection exposure machine comprising a projection lens |
| KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
| US7190527B2 (en) | 2002-03-01 | 2007-03-13 | Carl Zeiss Smt Ag | Refractive projection objective |
| DE10229249A1 (de) | 2002-03-01 | 2003-09-04 | Zeiss Carl Semiconductor Mfg | Refraktives Projektionsobjektiv mit einer Taille |
| DE10210899A1 (de) | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
| TWI249082B (en) | 2002-08-23 | 2006-02-11 | Nikon Corp | Projection optical system and method for photolithography and exposure apparatus and method using same |
| US7110081B2 (en) | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN101424881B (zh) | 2002-11-12 | 2011-11-30 | Asml荷兰有限公司 | 光刻投射装置 |
| US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7372541B2 (en) | 2002-11-12 | 2008-05-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121818A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR100588124B1 (ko) | 2002-11-12 | 2006-06-09 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
| DE60335595D1 (de) | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
| US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| SG121822A1 (en) | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG131766A1 (en) | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| DE60319658T2 (de) | 2002-11-29 | 2009-04-02 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
| DE10258718A1 (de) | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
| JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| EP1571697A4 (en) | 2002-12-10 | 2007-07-04 | Nikon Corp | EXPOSURE SYSTEM AND DEVICE PRODUCTION METHOD |
| US7242455B2 (en) * | 2002-12-10 | 2007-07-10 | Nikon Corporation | Exposure apparatus and method for producing device |
| WO2004053952A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| KR101036114B1 (ko) | 2002-12-10 | 2011-05-23 | 가부시키가이샤 니콘 | 노광장치 및 노광방법, 디바이스 제조방법 |
| SG158745A1 (en) | 2002-12-10 | 2010-02-26 | Nikon Corp | Exposure apparatus and method for producing device |
| US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
| DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
| EP1598855B1 (en) | 2003-02-26 | 2015-04-22 | Nikon Corporation | Exposure apparatus and method, and method of producing apparatus |
| DE10308610B4 (de) * | 2003-02-27 | 2006-04-13 | Carl Zeiss | Immersionsflüssigkeit für die Mikroskopie bei Wasserimmersion |
| KR101345474B1 (ko) | 2003-03-25 | 2013-12-27 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| WO2004090956A1 (ja) | 2003-04-07 | 2004-10-21 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| KR101547077B1 (ko) | 2003-04-09 | 2015-08-25 | 가부시키가이샤 니콘 | 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
| JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
| JP4656057B2 (ja) * | 2003-04-10 | 2011-03-23 | 株式会社ニコン | 液浸リソグラフィ装置用電気浸透素子 |
| CN101061429B (zh) | 2003-04-10 | 2015-02-04 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境系统 |
| KR101323993B1 (ko) | 2003-04-10 | 2013-10-30 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
| CN1771463A (zh) | 2003-04-10 | 2006-05-10 | 株式会社尼康 | 用于沉浸光刻装置收集液体的溢出通道 |
| EP2161621B1 (en) | 2003-04-11 | 2018-10-24 | Nikon Corporation | Cleanup method for optics in an immersion lithography apparatus, and corresponding immersion lithography apparatus |
| SG139733A1 (en) | 2003-04-11 | 2008-02-29 | Nikon Corp | Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly |
| WO2004092830A2 (en) | 2003-04-11 | 2004-10-28 | Nikon Corporation | Liquid jet and recovery system for immersion lithography |
| KR101369582B1 (ko) | 2003-04-17 | 2014-03-04 | 가부시키가이샤 니콘 | 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열 |
| US7348575B2 (en) | 2003-05-06 | 2008-03-25 | Nikon Corporation | Projection optical system, exposure apparatus, and exposure method |
| SG10201405231YA (en) | 2003-05-06 | 2014-09-26 | Nippon Kogaku Kk | Projection optical system, exposure apparatus, and exposure method |
| TWI295414B (en) | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| WO2004102646A1 (ja) | 2003-05-15 | 2004-11-25 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| TWI614794B (zh) | 2003-05-23 | 2018-02-11 | Nikon Corp | 曝光方法及曝光裝置以及元件製造方法 |
| TWI424470B (zh) | 2003-05-23 | 2014-01-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| EP2453465A3 (en) | 2003-05-28 | 2018-01-03 | Nikon Corporation | Exposure method, exposure apparatus, and method for producing a device |
| TWI347741B (en) | 2003-05-30 | 2011-08-21 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1486827B1 (en) | 2003-06-11 | 2011-11-02 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7317504B2 (en) | 2004-04-08 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR101520591B1 (ko) | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| TWI543235B (zh) | 2003-06-19 | 2016-07-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| EP1498778A1 (en) | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE60308161T2 (de) | 2003-06-27 | 2007-08-09 | Asml Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung eines Artikels |
| EP1494074A1 (en) | 2003-06-30 | 2005-01-05 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
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| US7236232B2 (en) | 2003-07-01 | 2007-06-26 | Nikon Corporation | Using isotopically specified fluids as optical elements |
| JP4697138B2 (ja) | 2003-07-08 | 2011-06-08 | 株式会社ニコン | 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法 |
| EP1643543B1 (en) * | 2003-07-09 | 2010-11-24 | Nikon Corporation | Exposure apparatus and method for manufacturing device |
| EP2264531B1 (en) | 2003-07-09 | 2013-01-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
| KR101296501B1 (ko) | 2003-07-09 | 2013-08-13 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
| SG109000A1 (en) | 2003-07-16 | 2005-02-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1650787A4 (en) | 2003-07-25 | 2007-09-19 | Nikon Corp | INVESTIGATION METHOD AND INVESTIGATION DEVICE FOR AN OPTICAL PROJECTION SYSTEM AND METHOD OF MANUFACTURING AN OPTICAL PROJECTION SYSTEM |
| EP1503244A1 (en) * | 2003-07-28 | 2005-02-02 | ASML Netherlands B.V. | Lithographic projection apparatus and device manufacturing method |
| US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
| CN104122760B (zh) | 2003-07-28 | 2017-04-19 | 株式会社尼康 | 曝光装置、器件制造方法 |
| US7326522B2 (en) | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
| US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
| US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
| US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
| TWI471705B (zh) | 2003-08-26 | 2015-02-01 | 尼康股份有限公司 | Optical components and exposure devices |
| US8149381B2 (en) | 2003-08-26 | 2012-04-03 | Nikon Corporation | Optical element and exposure apparatus |
| EP2261740B1 (en) | 2003-08-29 | 2014-07-09 | ASML Netherlands BV | Lithographic apparatus |
| TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| SG145780A1 (en) | 2003-08-29 | 2008-09-29 | Nikon Corp | Exposure apparatus and device fabricating method |
| US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
| TWI245163B (en) | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| KR20170070264A (ko) | 2003-09-03 | 2017-06-21 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
| US7551361B2 (en) | 2003-09-09 | 2009-06-23 | Carl Zeiss Smt Ag | Lithography lens system and projection exposure system provided with at least one lithography lens system of this type |
| JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US8208198B2 (en) | 2004-01-14 | 2012-06-26 | Carl Zeiss Smt Gmbh | Catadioptric projection objective |
| US7158211B2 (en) | 2003-09-29 | 2007-01-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1519230A1 (en) | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1519231B1 (en) * | 2003-09-29 | 2005-12-21 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1670043B1 (en) * | 2003-09-29 | 2013-02-27 | Nikon Corporation | Exposure apparatus, exposure method, and device manufacturing method |
| JP4492539B2 (ja) * | 2003-09-29 | 2010-06-30 | 株式会社ニコン | 液浸型光学系及び投影露光装置、並びにデバイス製造方法 |
| US7056646B1 (en) | 2003-10-01 | 2006-06-06 | Advanced Micro Devices, Inc. | Use of base developers as immersion lithography fluid |
| ITMI20031914A1 (it) * | 2003-10-03 | 2005-04-04 | Solvay Solexis Spa | Perfluoropolieteri. |
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2002
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- 2002-05-03 EP EP02738025A patent/EP1483625A1/de not_active Withdrawn
- 2002-05-03 WO PCT/EP2002/004846 patent/WO2003077036A1/de not_active Ceased
- 2002-05-03 JP JP2003575189A patent/JP2005519347A/ja active Pending
- 2002-05-03 AU AU2002312872A patent/AU2002312872A1/en not_active Abandoned
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- 2003-02-26 KR KR1020047014023A patent/KR100991590B1/ko not_active Expired - Fee Related
- 2003-02-26 JP JP2003575190A patent/JP2005519348A/ja active Pending
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- 2003-02-26 CN CNB038055759A patent/CN100573222C/zh not_active Expired - Fee Related
- 2003-02-26 AU AU2003221490A patent/AU2003221490A1/en not_active Abandoned
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010527160A (ja) * | 2007-05-14 | 2010-08-05 | カール・ツァイス・エスエムティー・アーゲー | マイクロリソグラフィ用投影対物器械及び投影露光装置 |
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| US7495840B2 (en) | 2009-02-24 |
| AU2003221490A1 (en) | 2003-09-22 |
| KR20040099307A (ko) | 2004-11-26 |
| US7203008B2 (en) | 2007-04-10 |
| DE10210899A1 (de) | 2003-09-18 |
| EP1483625A1 (de) | 2004-12-08 |
| WO2003077037A1 (en) | 2003-09-18 |
| CN1639644A (zh) | 2005-07-13 |
| US20050141098A1 (en) | 2005-06-30 |
| AU2002312872A1 (en) | 2003-09-22 |
| WO2003077036A1 (de) | 2003-09-18 |
| US20030174408A1 (en) | 2003-09-18 |
| US20050231814A1 (en) | 2005-10-20 |
| JP2005519348A (ja) | 2005-06-30 |
| US6891596B2 (en) | 2005-05-10 |
| EP1485760A1 (en) | 2004-12-15 |
| KR100991590B1 (ko) | 2010-11-04 |
| US20070188880A1 (en) | 2007-08-16 |
| CN100573222C (zh) | 2009-12-23 |
| US7312847B2 (en) | 2007-12-25 |
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