JP2005510005A - コンプリメンタリ・ビットpcramセンス増幅器及びその動作方法 - Google Patents
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- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
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- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
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Abstract
【解決手段】相補的なプログラマブル導体ランダムアクセスメモリー(PCRAM)素子を用いて、PCRAM素子の抵抗状態を検出する方法及び装置を開示し、一方の素子が検出される抵抗状態を保持して、他方の素子がこれと相補的な抵抗状態を保持する。センス増幅器が、高抵抗素子及び低抵抗素子を通した電圧放電を検出して、読み出される素子の抵抗状態を測定する。
Description
本発明は、プログラマブル導体ランダムアクセスメモリ(PCRAM:Programmable Conductor Random Access Memory)素子の抵抗を検出する方法及び装置に関するものである。
本発明は、一部のDRAMメモリーデバイスに採用されているのと同様の読出しアーキテクチャを利用したPCRAMデバイス、及びその動作方法を提供するものである。第1及び第2プリグラマブル導体メモリー素子を具えた一対のコンプリメンタリ(相補型)PCRAMメモリーセルを採用して、各メモリーセルをそれぞれのアクセス・トランジスタに接続する。書込み動作中には、これらの第1及び第2メモリー素子に相補的な2進値を書込み、即ち、第1メモリー素子を高抵抗状態にする書込みを行えば、第2メモリー素子は低抵抗状態にする書込みを行い、逆に第1メモリー素子を低抵抗状態にする書込みを行えば、第2メモリー素子は高抵抗状態にする書込みを行う。
本発明は、従来のDRAMデバイスに採用されているのと幾分類似したセンス増幅器(センスアンプ、読出し増幅器)のアーキテクチャを採用して、PCRAMメモリーセルの抵抗状態を検出する。本発明では、2進地を抵抗値として第1PCRAMセルに記憶しつつ、その相補的な(コンプリメンタリ)抵抗値を第2PCRAMに記憶する。第1PCRAMセルの読出し中には、両方のPCRAMセルを用いて、プリチャージ(事前充電)電荷をセンス増幅器のそれぞれの入力に対して放電して、このセンス増幅器はこの放電電圧を読み取って前記抵抗値を測定して、これにより、読出し動作が行われている第1PCRAMセルに記憶されている2進値を特定する。
Claims (58)
- 第1数値線及び第2数値線と;
相補的な2進数値を記憶する第1プログラマブル導体メモリー素子及び第2プログラマブル導体メモリー素子と;
前記第1導体メモリー素子を前記第1数値線に結合するための第1アクセスデバイス、及び前記第2導体メモリー素子を前記第2数値線に結合するための第2アクセスデバイスと;
各々が前記第1数値線及び前記第2数値線に結合された入力を有して、前記メモリー素子の一方に抵抗値として記憶されている2進値を読み出すためのセンス増幅器と
を具えていることを特徴とするPCRAMデバイス。 - さらに、読出し動作の前に、前記数値線を共通プリチャージ電圧にプリチャージするためのプリチャージ回路を具えていることを特徴とする請求項1に記載のデバイス。
- さらに、
各々が前記第1アクセスデバイス及び前記第2アクセスデバイスに結合された一対の行線と;
前記第1行線及び前記第2行線を同時に活性化して、これにより、前記第1アクセスデバイス及び前記第2アクセスデバイスを同時に作動させる回路と
を具えていることを特徴とする請求項1に記載のデバイス。 - 前記第1アクセスデバイス及び前記第2アクセスデバイスが、アクセス・トランジスタであることを特徴とする請求項3に記載のデバイス。
- 前記第1プログラマブル導体メモリー素子及び前記第2プログラマブル導体メモリー素子を、カルコゲナイドガラスで形成したことを特徴とする請求項1に記載のデバイス。
- 前記アクセスデバイスを作動させた際に、前記数値線上の前記プリチャージ電圧が、前記第1プログラマブル導体メモリーデバイス及び前記第2プログラマブル導体メモリーデバイスのそれぞれを通って放電して、前記センス増幅器が、前記メモリーデバイスのいずれが高抵抗状態を有しいずれが低抵抗状態を有するか、及び前記メモリーデバイスのいずれが、前記一方のメモリー素子の抵抗状態に対応する2進値を出力しているかを判定することを特徴とする請求項3に記載のデバイス。
- 前記数値線が、これに関連する寄生容量を有して、該寄生容量が、前記プリチャージ電圧を記憶することを特徴とする請求項2に記載のデバイス。
- 前記寄生容量が、前記プリチャージ電圧よりも大きい電圧値を記憶することを特徴とする請求項2に記載のデバイス。
- 読出し動作中に、前記メモリー素子の少なくとも一方の自動的なリフレッシュを防止する方法で、前記行線を活性化することを特徴とする請求項3に記載のデバイス。
- 読出し動作中に、前記メモリー素子の少なくとも一方の自動的なリフレッシュを生じさせる方法で、前記行線を活性化することを特徴とする請求項3に記載のデバイス。
- 前記第1メモリー素子及び前記第2メモリー素子が、共通のメモリーアレイ内にあることを特徴とする請求項1に記載のデバイス。
- 前記第1メモリー素子及び前記第2メモリー素子が、異なるメモリーアレイ内にあることを特徴とする請求項1に記載のデバイス。
- さらに、前記2つの数値線の電圧を平衡させる平衡回路を具えていることを特徴とする請求項2に記載のデバイス。
- 第1プログラマブル導体ランダムアクセス・メモリーセル及び第2プログラマブル導体ランダムアクセス・メモリーセルの対を複数具えたメモリーデバイスであって、前記メモリーセルの対の各々が、
相補的な2進数値を記憶する第1プログラマブル導体メモリー素子及び第2プログラマブル導体メモリー素子と;
前記第1導体メモリー素子を第1数値線に結合する第1アクセスデバイス、及び前記第2導体メモリー素子を第2数値線に結合する第2アクセスデバイスと;
各々が前記第1数値線及び前記第2数値線に結合された入力を有し、前記メモリー素子の一方に抵抗値として記憶されている2進値を読み出すためのセンス増幅器と
を具えていることを特徴とするメモリーデバイス。 - さらに、読出し動作の前に、前記数値線を共通プリチャージ電圧にプリチャージするためのプリチャージ回路を具えていることを特徴とする請求項14に記載のデバイス。
- さらに、
各々が前記第1アクセスデバイス及び前記第2アクセスデバイスに接続された一対の行線と;
前記第1行線及び前記第2行線を同時に活性化して、これにより、前記第1アクセスデバイス及び前記第2アクセスデバイスを同時に作動させるための回路と
を具えていることを特徴とする請求項14に記載のデバイス。 - 前記第1アクセスデバイス及び前記第2アクセスデバイスが、アクセス・トランジスタであることを特徴とする請求項16に記載のデバイス。
- 前記第1プログラマブル導体メモリー素子及び前記第2プログラマブル導体メモリー素子を、カルコゲナイドガラスで形成したことを特徴とする請求項16に記載のデバイス。
- 前記アクセスデバイスを作動させた際に、前記数値線上の前記プリチャージ電圧が、前記第1プログラマブル導体メモリーデバイス及び前記第2プログラマブル導体メモリーデバイスのそれぞれを通って放電して、前記センス増幅器が、前記メモリーデバイスのいずれが高抵抗状態を有しいずれが低抵抗状態を有するか、及び前記メモリーデバイスのいずれが、前記一方のメモリー素子の抵抗状態に対応する2進値を出力しているかを判定することを特徴とする請求項14に記載のデバイス。
- 前記数値線が、これに関連する寄生容量を有して、該寄生容量が、前記プリチャージ電圧を記憶することを特徴とする請求項15に記載のデバイス。
- 前記寄生容量が、前記プリチャージ電圧よりも大きい電圧値を記憶することを特徴とする請求項15に記載のデバイス。
- 読出し動作中に、前記メモリー素子の少なくとも一方の自動的なリフレッシュを防止する方法で、前記行線を活性化することを特徴とする請求項16に記載のデバイス。
- 読出し動作中に、前記メモリー素子の少なくとも一方の自動的なリフレッシュを生じさせる方法で、前記行線を活性化することを特徴とする請求項16に記載のデバイス。
- 前記第1メモリー素子及び前記第2メモリー素子が、共通のメモリーアレイ内にあることを特徴とする請求項14に記載のデバイス。
- 前記第1メモリー素子及び前記第2メモリー素子が、異なるメモリーアレイ内にあることを特徴とする請求項14に記載のデバイス。
- さらに、前記2つの数値線の電圧を平衡させる平衡回路を具えていることを特徴とする請求項15に記載のデバイス。
- 前記メモリーデバイスを、メモリーモジュール上に設けたことを特徴とする請求項14に記載のデバイス。
- 前記メモリーモジュールが、プラグイン・メモリーモジュールであることを特徴とする請求項27に記載のデバイス。
- プロセッサと;
前記プロセッサに結合したメモリーシステムとを具えたコンピュータシステムであって、
前記メモリーシステムが、
第1数値線及び第2数値線と;
相補的な2進数値を記憶する第1プログラマブル導体メモリー素子及び第2プログラマブル導体メモリー素子と;
前記第1導体メモリー素子を第1数値線に結合する第1アクセスデバイス、及び前記第2導体メモリー素子を第2数値線に結合する第2アクセスデバイスと;
各々が前記第1数値線及び前記第2数値線に結合された入力を有し、前記メモリー素子の一方に抵抗値として記憶されている2進値を読み出すためのセンス増幅器と
を具えていることを特徴とするコンピュータシステム。 - さらに、読出し動作の前に、前記数値線を共通プリチャージ電圧にプリチャージするためのプリチャージ回路を具えていることを特徴とする請求項29に記載のシステム。
- さらに、
各々が前記第1アクセスデバイス及び前記第2アクセスデバイスに接続された一対の行線と;
前記第1行線及び前記第2行線を同時に活性化して、これにより、前記第1アクセスデバイス及び前記第2アクセスデバイスを同時に作動させるための回路と
を具えていることを特徴とする請求項29に記載のシステム。 - 前記第1アクセスデバイス及び前記第2アクセスデバイスが、アクセス・トランジスタであることを特徴とする請求項31に記載のシステム。
- 前記第1プログラマブル導体メモリー素子及び前記第2プログラマブル導体メモリー素子を、カルコゲナイドガラスで形成したことを特徴とする請求項29に記載のシステム。
- 前記アクセスデバイスを作動させた際に、前記数値線上の前記プリチャージ電圧が、前記第1プログラマブル導体メモリーデバイス及び前記第2プログラマブル導体メモリーデバイスのそれぞれを通って放電して、前記センス増幅器が、前記メモリーデバイスのいずれが高抵抗状態を有しいずれが低抵抗状態を有するか、及び前記メモリーデバイスのいずれが、前記一方のメモリー素子の抵抗状態に対応する2進値を出力しているかを判定することを特徴とする請求項31に記載のシステム。
- 前記数値線が、これに関連する寄生容量を有して、該寄生容量が、前記プリチャージ電圧を記憶することを特徴とする請求項30に記載のシステム。
- 前記寄生容量が、前記プリチャージ電圧よりも大きい電圧値を記憶することを特徴とする請求項30に記載のシステム。
- 読出し動作中に、前記メモリー素子の少なくとも一方の自動的なリフレッシュを防止する方法で、前記行線を活性化することを特徴とする請求項31に記載のシステム。
- 読出し動作中に、前記メモリー素子の少なくとも一方の自動的なリフレッシュを生じさせる方法で、前記行線を活性化することを特徴とする請求項31に記載のシステム。
- 前記第1メモリー素子及び前記第2メモリー素子が、共通のメモリーアレイ内にあることを特徴とする請求項29に記載のシステム。
- 前記第1メモリー素子及び前記第2メモリー素子が、異なるメモリーアレイ内にあることを特徴とする請求項29に記載のシステム。
- さらに、前記2つの数値線の電圧を平衡させる平衡回路を具えていることを特徴とする請求項30に記載のシステム。
- 2進値を、第1プログラマブル導体メモリー素子及び第2プログラマブル導体メモリー素子に、それぞれ異なる抵抗状態として記憶するステップと;
前記メモリー素子の各々を通してそれぞれの電圧を放電して、これらの放電電圧を比較することによって、前記メモリー素子の一方に記憶されている2進値を特定するステップと
を具えていることを特徴とするプログラマブル導体メモリーデバイスの動作方法。 - 前記放電のステップが、
相補的な数値線を特定電圧値にプリチャージするステップと;
前記相補的な数値線の各々の電圧を、それぞれの前記メモリー素子を通して放電するステップと
を具えていることを特徴とする請求項42に記載の方法。 - 前記メモリー素子の各々に関連するそれぞれのアクセス・トランジスタをイネーブル状態にすることによって、前記相補的な数値線上の前記プリチャージ電圧値を、前記メモリー素子のそれぞれを通して放電することを特徴とする請求項43に記載の方法。
- さらに、前記アクセス・トランジスタをイネーブル状態にする前に、前記プリチャージを完了するステップを具えていることを特徴とする請求項44に記載の方法。
- さらに、前記アクセス・トランジスタをイネーブル状態にする前に、前記数値線を平衡させるステップを具えていることを特徴とする請求項45に記載の方法。
- 前記比較が、
一方の前記メモリー素子に関連する前記放電電圧が、前記2つの放電電圧のうちの高い方であるか低い方であるかを判定するステップと;
前記一方のメモリー素子に関連する前記放電電圧が前記高い方の放電電圧である場合に、第1の2進値を出力して、前記一方のメモリー素子に関連する前記放電電圧が前記低い方の放電電圧である場合に、第2の2進値を出力するステップと
を具えていることを特徴とする請求項44に記載の方法。 - さらに、より高い放電電圧を有する数値線を、第1の所定電圧状態に設定して、より低い放電電圧を有する数値線を、第2の所定電圧状態に設定するステップを具えていることを特徴とする請求項47に記載の方法。
- 前記第1の所定電圧が、前記第2の所定電圧よりも高いことを特徴とする請求項48に記載の方法。
- 前記第2の所定電圧が、接地電圧であることを特徴とする請求項49に記載の方法。
- さらに、前記数値線を前記第1電圧状態及び前記第2電圧状態に設定する前に、前記アクセス・トランジスタをディセーブル状態にするステップを具えていることを特徴とする請求項48に記載の方法。
- さらに、前記数値線が前記第1電圧状態及び前記第2電圧状態に設定されている期間中に、前記アクセス・トランジスタの少なくとも一方をイネーブル状態にするステップを具えていることを特徴とする請求項48に記載の方法。
- 第1数値線及び第2数値線を形成するステップと;
第1プログラマブル導体メモリー素子及び第2プログラマブル導体メモリー素子を形成するステップと;
前記第1メモリー素子を前記第1数値線に結合するための第1アクセス・トランジスタ、及び前記第2メモリー素子を前記第2数値線に結合するための第2アクセス・トランジスタを形成するステップと;
前記第1数値線及び前記第2数値線を第1電圧にプリチャージするためのプリチャージ回路を形成するステップと;
前記メモリー素子の各々を、前記数値線のそれぞれに結合すべく、前記アクセス・トランジスタを作動させるための、それぞれの行線を形成するステップと;
各々が前記数値線のそれぞれに結合された入力を有するセンス増幅器を形成するステップと
を具えていることを特徴とするプログラマブル導体メモリーデバイスの生産方法。 - さらに、行アドレス信号をデコードして、複数のワード線を選択して同時にイネーブル状態にするための行デコーダを形成するステップを具えていることを特徴とする請求項53に記載の方法。
- 前記メモリー素子を、カルコゲナイドガラスで形成することを特徴とする請求項53に記載の方法。
- 前記メモリー素子を、共通のメモリーアレイ内に製造することを特徴とする請求項53に記載の方法。
- 前記メモリー素子を、異なるメモリーアレイ内に製造することを特徴とする請求項53に記載の方法。
- さらに、前記数値線を平衡させるための平衡回路を形成するステップを具えていることを特徴とする請求項53に記載の方法。
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US09/988,627 US6791859B2 (en) | 2001-11-20 | 2001-11-20 | Complementary bit PCRAM sense amplifier and method of operation |
PCT/US2002/037227 WO2003044802A2 (en) | 2001-11-20 | 2002-11-20 | Complementary bit pcram (programmable conductor ram) and method of operation |
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Also Published As
Publication number | Publication date |
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CN100483549C (zh) | 2009-04-29 |
KR20070087208A (ko) | 2007-08-27 |
JP4681809B2 (ja) | 2011-05-11 |
KR20080039548A (ko) | 2008-05-07 |
AU2002352816A8 (en) | 2003-06-10 |
AU2002352816A1 (en) | 2003-06-10 |
WO2003044802A3 (en) | 2004-01-29 |
US20080225571A1 (en) | 2008-09-18 |
WO2003044802A2 (en) | 2003-05-30 |
KR100794878B1 (ko) | 2008-01-14 |
KR100918171B1 (ko) | 2009-09-17 |
US7869249B2 (en) | 2011-01-11 |
CN1672214A (zh) | 2005-09-21 |
US20030095426A1 (en) | 2003-05-22 |
US7242603B2 (en) | 2007-07-10 |
KR20040068142A (ko) | 2004-07-30 |
US7366003B2 (en) | 2008-04-29 |
US7002833B2 (en) | 2006-02-21 |
US20060245234A1 (en) | 2006-11-02 |
EP1454325A2 (en) | 2004-09-08 |
US6791859B2 (en) | 2004-09-14 |
US20050018509A1 (en) | 2005-01-27 |
US20060023532A1 (en) | 2006-02-02 |
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