JP2005251903A5 - - Google Patents
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- Publication number
- JP2005251903A5 JP2005251903A5 JP2004058883A JP2004058883A JP2005251903A5 JP 2005251903 A5 JP2005251903 A5 JP 2005251903A5 JP 2004058883 A JP2004058883 A JP 2004058883A JP 2004058883 A JP2004058883 A JP 2004058883A JP 2005251903 A5 JP2005251903 A5 JP 2005251903A5
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Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004058883A JP4667756B2 (ja) | 2004-03-03 | 2004-03-03 | 半導体装置 |
| TW093136871A TWI277208B (en) | 2004-03-03 | 2004-11-30 | Semiconductor device |
| TW095115890A TWI283926B (en) | 2004-03-03 | 2004-11-30 | Semiconductor device |
| US11/002,803 US7327007B2 (en) | 2004-03-03 | 2004-12-03 | Semiconductor device with high breakdown voltage |
| DE102004063523A DE102004063523B4 (de) | 2004-03-03 | 2004-12-30 | Halbleitervorrichtung |
| CNB2005100047850A CN100388493C (zh) | 2004-03-03 | 2005-01-26 | 半导体器件 |
| KR1020050016473A KR100710433B1 (ko) | 2004-03-03 | 2005-02-28 | 반도체장치 |
| IT000127A ITTO20050127A1 (it) | 2004-03-03 | 2005-02-28 | Dispositivo a semiconduzione |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004058883A JP4667756B2 (ja) | 2004-03-03 | 2004-03-03 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010167025A Division JP5172907B2 (ja) | 2010-07-26 | 2010-07-26 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005251903A JP2005251903A (ja) | 2005-09-15 |
| JP2005251903A5 true JP2005251903A5 (enExample) | 2006-09-21 |
| JP4667756B2 JP4667756B2 (ja) | 2011-04-13 |
Family
ID=34879837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004058883A Expired - Lifetime JP4667756B2 (ja) | 2004-03-03 | 2004-03-03 | 半導体装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7327007B2 (enExample) |
| JP (1) | JP4667756B2 (enExample) |
| KR (1) | KR100710433B1 (enExample) |
| CN (1) | CN100388493C (enExample) |
| DE (1) | DE102004063523B4 (enExample) |
| IT (1) | ITTO20050127A1 (enExample) |
| TW (2) | TWI283926B (enExample) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4906281B2 (ja) * | 2005-03-30 | 2012-03-28 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
| JP4863665B2 (ja) * | 2005-07-15 | 2012-01-25 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP4914589B2 (ja) * | 2005-08-26 | 2012-04-11 | 三菱電機株式会社 | 半導体製造装置、半導体製造方法および半導体装置 |
| JP4973238B2 (ja) * | 2007-02-28 | 2012-07-11 | 三菱電機株式会社 | 半導体装置 |
| US7719076B2 (en) * | 2007-08-10 | 2010-05-18 | United Microelectronics Corp. | High-voltage MOS transistor device |
| US20090096039A1 (en) * | 2007-10-10 | 2009-04-16 | United Microelectronics Corp. | High-voltage device and manufacturing method of top layer in high-voltage device |
| JP2011029466A (ja) * | 2009-07-28 | 2011-02-10 | Hitachi Ltd | 半導体装置 |
| US9029866B2 (en) * | 2009-08-04 | 2015-05-12 | Gan Systems Inc. | Gallium nitride power devices using island topography |
| US9818857B2 (en) | 2009-08-04 | 2017-11-14 | Gan Systems Inc. | Fault tolerant design for large area nitride semiconductor devices |
| WO2011014951A1 (en) * | 2009-08-04 | 2011-02-10 | John Roberts | Island matrixed gallium nitride microwave and power switching transistors |
| JP5594515B2 (ja) * | 2010-03-26 | 2014-09-24 | 日本電気株式会社 | 半導体装置、電子装置、半導体装置の製造方法、および半導体装置の動作方法 |
| CN102893392B (zh) | 2010-04-13 | 2015-08-05 | Gan系统公司 | 采用孤岛拓扑结构的高密度氮化镓器件 |
| US8546889B2 (en) | 2010-06-04 | 2013-10-01 | Fuji Electric Co., Ltd. | Semiconductor device and driving circuit |
| US8629513B2 (en) * | 2011-01-14 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | HV interconnection solution using floating conductors |
| DE102011108651B4 (de) * | 2011-07-26 | 2019-10-17 | Austriamicrosystems Ag | Hochvolttransistorbauelement und Herstellungsverfahren |
| US9373619B2 (en) * | 2011-08-01 | 2016-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | High voltage resistor with high voltage junction termination |
| CN102856356B (zh) * | 2012-09-28 | 2015-09-09 | 中国科学院微电子研究所 | 用于半导体功率器件的终端 |
| JP6009341B2 (ja) * | 2012-12-13 | 2016-10-19 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| EP2757580A1 (en) * | 2013-01-22 | 2014-07-23 | Nxp B.V. | Bipolar cmos dmos (bcd) processes |
| JP6228428B2 (ja) | 2013-10-30 | 2017-11-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9570437B2 (en) * | 2014-01-09 | 2017-02-14 | Nxp B.V. | Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same |
| JP6210913B2 (ja) * | 2014-03-20 | 2017-10-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| JP6185440B2 (ja) * | 2014-09-16 | 2017-08-23 | 株式会社東芝 | 半導体装置 |
| CN105789051A (zh) * | 2014-12-24 | 2016-07-20 | 北大方正集团有限公司 | 一种ldmos晶体管及制作方法 |
| CN105070756B (zh) * | 2015-08-18 | 2018-06-19 | 上海华虹宏力半导体制造有限公司 | 超高压ldmos器件结构 |
| CN107949915B (zh) * | 2016-03-14 | 2021-04-27 | 富士电机株式会社 | 半导体装置及制造方法 |
| JP6693805B2 (ja) * | 2016-05-17 | 2020-05-13 | ローム株式会社 | 半導体装置 |
| JP6590076B2 (ja) | 2016-09-13 | 2019-10-16 | 三菱電機株式会社 | 半導体装置 |
| JP6996247B2 (ja) * | 2017-11-17 | 2022-01-17 | 富士電機株式会社 | 半導体集積回路装置 |
| JP7407590B2 (ja) | 2019-12-25 | 2024-01-04 | 三菱電機株式会社 | 半導体装置および集積回路 |
| JP7608226B2 (ja) * | 2021-03-19 | 2025-01-06 | 株式会社東芝 | 半導体装置 |
| US20230097805A1 (en) * | 2021-09-24 | 2023-03-30 | Intel Corporation | Complex field-shaping by fine variation of local material density or properties |
| GB2639824A (en) * | 2024-03-21 | 2025-10-08 | X Fab Global Services Gmbh | Improved field plate |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1131801A (en) * | 1978-01-18 | 1982-09-14 | Johannes A. Appels | Semiconductor device |
| JPS61168253A (ja) * | 1985-01-19 | 1986-07-29 | Sharp Corp | 高耐圧ｍｏｓ電界効果半導体装置 |
| JPS6364365A (ja) | 1986-09-05 | 1988-03-22 | Hitachi Ltd | 半導体装置 |
| US5153697A (en) * | 1989-02-10 | 1992-10-06 | Texas Instruments Incorporated | Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same |
| JP2605860B2 (ja) | 1989-03-22 | 1997-04-30 | 富士電機株式会社 | 高耐圧素子を含む半導体装置 |
| US5040045A (en) * | 1990-05-17 | 1991-08-13 | U.S. Philips Corporation | High voltage MOS transistor having shielded crossover path for a high voltage connection bus |
| JP2739004B2 (ja) * | 1992-01-16 | 1998-04-08 | 三菱電機株式会社 | 半導体装置 |
| US5455436A (en) * | 1994-05-19 | 1995-10-03 | Industrial Technology Research Institute | Protection circuit against electrostatic discharge using SCR structure |
| JP3808116B2 (ja) | 1995-04-12 | 2006-08-09 | 富士電機デバイステクノロジー株式会社 | 高耐圧ｉｃ |
| JP3547884B2 (ja) * | 1995-12-30 | 2004-07-28 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
| JP3917211B2 (ja) * | 1996-04-15 | 2007-05-23 | 三菱電機株式会社 | 半導体装置 |
| JP3893185B2 (ja) | 1996-05-14 | 2007-03-14 | 三菱電機株式会社 | 半導体装置 |
| JPH104143A (ja) | 1996-06-14 | 1998-01-06 | Sanyo Electric Co Ltd | 半導体集積回路 |
| JPH1012873A (ja) * | 1996-06-27 | 1998-01-16 | Matsushita Electric Works Ltd | 半導体装置 |
| JPH10242454A (ja) * | 1997-02-27 | 1998-09-11 | Matsushita Electric Works Ltd | 半導体装置 |
| EP0936674B1 (en) * | 1998-02-10 | 2006-04-26 | STMicroelectronics S.r.l. | Integrated circuit comprising a VDMOS transistor protected against overvoltages between source and gate |
| JP2000091443A (ja) * | 1998-09-14 | 2000-03-31 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JP2000294763A (ja) * | 1999-04-06 | 2000-10-20 | Nec Corp | 半導体装置 |
| JP3425131B2 (ja) * | 1999-12-17 | 2003-07-07 | 松下電器産業株式会社 | 高耐圧半導体装置 |
| KR100374627B1 (ko) * | 2000-08-04 | 2003-03-04 | 페어차일드코리아반도체 주식회사 | 고내압 아이솔레이션 영역을 갖는 고전압 반도체 소자 |
| JP4610786B2 (ja) | 2001-02-20 | 2011-01-12 | 三菱電機株式会社 | 半導体装置 |
| JP3654872B2 (ja) * | 2001-06-04 | 2005-06-02 | 松下電器産業株式会社 | 高耐圧半導体装置 |
-
2004
- 2004-03-03 JP JP2004058883A patent/JP4667756B2/ja not_active Expired - Lifetime
- 2004-11-30 TW TW095115890A patent/TWI283926B/zh not_active IP Right Cessation
- 2004-11-30 TW TW093136871A patent/TWI277208B/zh not_active IP Right Cessation
- 2004-12-03 US US11/002,803 patent/US7327007B2/en not_active Expired - Lifetime
- 2004-12-30 DE DE102004063523A patent/DE102004063523B4/de not_active Expired - Fee Related
-
2005
- 2005-01-26 CN CNB2005100047850A patent/CN100388493C/zh not_active Expired - Lifetime
- 2005-02-28 KR KR1020050016473A patent/KR100710433B1/ko not_active Expired - Fee Related
- 2005-02-28 IT IT000127A patent/ITTO20050127A1/it unknown