JP2005235858A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2005235858A JP2005235858A JP2004040403A JP2004040403A JP2005235858A JP 2005235858 A JP2005235858 A JP 2005235858A JP 2004040403 A JP2004040403 A JP 2004040403A JP 2004040403 A JP2004040403 A JP 2004040403A JP 2005235858 A JP2005235858 A JP 2005235858A
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- Prior art keywords
- insulating layer
- semiconductor substrate
- semiconductor device
- via hole
- pad electrode
- Prior art date
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
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- 238000000034 method Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
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- 238000007747 plating Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
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Abstract
【解決手段】 本発明の半導体装置は、半導体基板1上にシリコン酸化膜またはシリコン窒化膜等から成る絶縁層2を介して形成されたパッド電極3を被覆するように前記半導体基板1の表面に接着された支持板5と、前記半導体基板1の裏面から前記パッド電極3の表面に到達するように形成されたビアホール8とを有するものにおいて、前記半導体基板1の裏面に近い部分の開口径よりも前記パッド電極の表面に近い部分の開口径が広いことを特徴とする。
【選択図】 図2
Description
2 絶縁層
3 パッド電極
7 第1の開口
8 ビアホール
9,9A 絶縁層
10 バリア膜
11 シード層
12 再配線層
13 ボール状端子
Claims (9)
- 半導体基板上に絶縁層を介して形成されたパッド電極を被覆するように前記半導体基板の表面に接着された支持板と、前記半導体基板の裏面から前記パッド電極の表面に到達するように形成されたビアホールとを有する半導体装置において、
前記半導体基板の裏面に近い部分のビアホールの開口径よりも前記パッド電極の表面に近い部分のビアホールの開口径が広いことを特徴とする半導体装置。 - 前記ビアホールの側壁に絶縁層もしくは金属層が形成されていることを特徴とする請求項1に記載の半導体装置。
- 半導体基板の表面に絶縁層を介して形成されたパッド電極を被覆するように前記半導体基板の表面に支持板を接着する工程と、前記半導体基板の裏面から前記パッド電極の表面に到達するようにビアホールを形成する工程とを有する半導体装置の製造方法において
前記ビアホールを形成する工程は、前記半導体基板に対して前記絶縁層が露出しない位置まで第1の開口を形成する工程と、前記半導体基板に対して前記第1の開口の開口径よりも広い開口径を有する第2の開口を前記絶縁層が露出する位置まで形成する工程を含むことを特徴とする半導体装置の製造方法。 - 前記ビアホールを形成する工程は、前記第2の開口から露出した前記絶縁層をエッチングして前記パッド電極を露出させる工程を含むことを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記ビアホールの側壁に絶縁層を形成する工程と、前記絶縁層上に金属層を形成する工程とを具備することを特徴とする請求項3、4のいずれか1項に記載の半導体装置の製造方法。
- 前記ビアホールの側壁に絶縁層を形成する工程は、ビアホールを含む半導体基板上に絶縁層を形成した後に、前記半導体基板上に形成したレジスト層をマスクにして前記パッド電極上の絶縁層を除去する工程であることを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記パッド電極上の絶縁層を除去する工程は、前記レジスト層をマスクとして用いないエッチング工程であることを特徴とする請求項6に記載の半導体装置の製造方法。
- 前記金属層に接続されるボール状端子を形成する工程を具備することを特徴とする請求項5に記載の半導体装置の製造方法。
- 前記半導体基板を複数の半導体チップに分割する工程を具備することを特徴とする請求項3、4、5、6、7,8のいずれか1項に記載の半導体装置の製造方法。
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TW094102860A TWI268534B (en) | 2004-02-17 | 2005-01-31 | Semiconductor device and method for making same |
US11/055,707 US7732925B2 (en) | 2004-02-17 | 2005-02-11 | Semiconductor device and manufacturing method thereof |
EP05002897.6A EP1564810B1 (en) | 2004-02-17 | 2005-02-11 | Semiconductor device and manufacturing method thereof |
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CNB2005100093666A CN100382304C (zh) | 2004-02-17 | 2005-02-17 | 半导体装置及其制造方法 |
US11/808,667 US7750478B2 (en) | 2004-02-17 | 2007-06-12 | Semiconductor device with via hole of uneven width |
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JP2013258428A (ja) * | 2013-08-29 | 2013-12-26 | Lapis Semiconductor Co Ltd | 半導体装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070249158A1 (en) | 2007-10-25 |
KR20060042012A (ko) | 2006-05-12 |
KR100658543B1 (ko) | 2006-12-19 |
JP4850392B2 (ja) | 2012-01-11 |
TW200531142A (en) | 2005-09-16 |
TWI268534B (en) | 2006-12-11 |
EP1564810B1 (en) | 2017-01-11 |
CN100382304C (zh) | 2008-04-16 |
EP1564810A1 (en) | 2005-08-17 |
US20050189637A1 (en) | 2005-09-01 |
US7750478B2 (en) | 2010-07-06 |
CN1658387A (zh) | 2005-08-24 |
US7732925B2 (en) | 2010-06-08 |
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