CN105679770B - 阵列基板及其制造方法 - Google Patents
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Abstract
本发明提供一种阵列基板,其包括:显示区和封装区,所述封装区包括多层功能层,所述封装区还包括通孔,所述通孔贯穿至少一层功能层,所述通孔用于使封装胶通过所述通孔流入;沟槽,所述沟槽设置在至少部分所述通孔上方,其中,所述至少部分通孔在阵列基板的衬底基板上的投影区域位于所述沟槽在所述衬底基板上的投影区域内。
Description
技术领域
本发明涉及显示器领域,具体涉及显示装置的阵列基板及其制造方法。
背景技术
显示装置的制作过程需要进行封装,并且封装的优劣对于成品率有较大的影响
图1示出了一种设置在阵列基板上的传统的封装结构。该阵列基板包括玻璃基板100、缓冲层201、栅绝缘层202、栅金属层203、中间绝缘层204、源漏极金属层205、有机层206、隔离柱207以及盖板玻璃900,其中,该封装结构包括在阵列基板的部分功能层上设置的通孔903,封装胶902通过所述通孔903流入,以与栅金属接触。
如图2所示,其进一步示出了通孔903的结构。通孔903的截面为“I”形。
采用图1-2中示出的封装结构进行封装时,其具有如下缺点:
在进行组装时,利用激光对封装胶进行融化,上述“I”形通孔的封装结构导致封装胶溢出;
上述“I”形通孔的封装结构导致封装后阵列基板内部残余应力较大,从而引起封装胶开裂;
采用上述封装结构,封装机械强度不够,对成品进行测试时水汽、氧气易进入阵列基板内,导致显示器件失效。
发明内容
本发明的目的在于克服现有技术中存在的问题和缺陷的至少一个方面。
根据本发明所提供的阵列基板。其包括:显示区和封装区,所述封装区包括多层功能层,所述封装区还包括通孔,所述通孔贯穿至少一层功能层,所述通孔用于使封装胶通过所述通孔流入;沟槽,所述沟槽设置在至少部分所述通孔上方,其中,所述至少部分通孔在阵列基板的衬底基板上的投影区域位于所述沟槽在所述衬底基板上的投影区域内。
在本发明的实施方式中,所述通孔的截面设置成倒T形结构。
在本发明的实施方式中,所述功能层包括层叠的第一膜层、第二膜层和第三膜层;所述第一膜层较所述第二膜层以及第三膜层远离所述衬底基板;所述通孔包括第一通孔、第二通孔;所述第一通孔贯穿第一膜层、第二膜层和第三膜层,所述第二通孔贯穿第二膜层;所述沟槽包括设置在第二通孔上方的第一沟槽。
在本发明的实施方式中,所述通孔还包括第三通孔;所述第三通孔贯穿第二膜层和第三膜层;所述沟槽还包括设置在第三通孔上方的第二沟槽和/或设置在第二通孔和第三通孔上方的第三沟槽。
在本发明的实施方式中,所述功能层还包括第四膜层,所述通孔还包括第四通孔,其中,所述第四通孔贯穿第二膜层、第三膜层和第四膜层;所述沟槽还包括设置在第四通孔上方的第四沟槽和/或设置在第二通孔以及第四通孔上方的第五沟槽。
在本发明的实施方式中,所述第一膜层为源漏极金属层;所述第二膜层为中间绝缘层;所述第三膜层为栅金属层。
在本发明的实施方式中,所述第一膜层为源漏极金属层;所述第二膜层为中间绝缘层;所述第三膜层为栅金属层;所述第四膜层为栅绝缘层。
本发明还提供一种显示面板,所述阵列基板包括封装胶以及上述的阵列基板,所述封装胶位于所述封装区内。
本发明还提供一种显示装置,所述显示装置包括上述的显示面板。
本发明还提供一种制造前述的阵列基板的方法,其包括以下步骤:形成显示区和封装区,所述封装区包括多层功能层;形成封装区的步骤还包括:形成通孔,所述通孔贯穿至少一层功能层,所述通孔用于 使封装胶通过所述通孔流入;形成沟槽,所述沟槽位于至少部分所述通孔上方,其中,所述至少部分通孔在阵列基板的衬底基板上的投影区域位于所述沟槽在所述衬底基板上的投影区域内。
在本发明的实施方式中,上述方法还包括步骤:在所述功能层底部形成倒T形通孔。
在本发明的实施方式中,在形成封装区的步骤中,形成所述功能层使其包括第一膜层、第二膜层和第三膜层,所述第一膜层较所述第二膜层以及第三膜层远离所述衬底基板;通过构图工艺在第一膜层上形成第一沟槽;通过构图工艺形成所述第一通孔、第二通孔,其中,所述第一通孔贯穿第一膜层、第二膜层和第三膜层,所述第二通孔贯穿第二膜层,所述第一沟槽位于第二通孔上方。
在本发明的实施方式中,所述形成封装区的步骤还包括:通过构图工艺形成第三通孔;所述第三通孔贯穿第二膜层和第三膜层;通过构图工艺在第一膜层上形成第二沟槽和/或第三沟槽;所述第二沟槽位于所述第三通孔上方;所述第三沟槽位于所述第二通孔和第三通孔上方。
在本发明的实施方式中,所述形成封装区的步骤还包括:形成第四膜层;通过构图工艺形成第四通孔;所述第四通孔贯穿第二膜层、第三膜层和第四膜层;通过构图工艺在第一膜层上形成第四沟槽和/或第五沟槽;所述第四沟槽位于所述第四通孔上方;所述第五沟槽位于所述第二通孔和第四通孔上方。
利用本发明所提出的技术方案,其取得下述有益的技术效果的至少一个方面,通过本发明所提供的阵列基板,其可以在激光融化封装胶时,避免封装胶的溢出;利用本发明所提供的阵列基板可以增强封装位置处的机械强度;利用本发明所提供的阵列基板可以减少封装后阵列基板内部残余应力,降低裂开风险;工艺兼容性强,简单可行。
附图说明
本发明的这些和/或其他方面和优点从下面结合附图对优选实施例的描述中将变得明显和容易理解,其中:
图1是现有技术中用于阵列基板的封装结构的示意图;
图2是图1的结构的局部图;
图3是根据本发明所提供的阵列基板的一种实施方式的示意图;
图4是根据本发明所提供的阵列基板的又一种实施方式的示意图;
图5是根据本发明所提供的阵列基板的再一种实施方式的示意图;
图6是对本发明所提供的阵列基板进行封装融化的示意图。
具体实施方式
下面将参照附图详细描述本发明的实施例,其中相同的标号对应相同的元件。但是,本发明有很多不同的实施方案,不能解释为将本发明限定在所述的实施例;而只是通过提供本发明的实施例,使本公开内容全面而完整,并向本领域技术人员完全的传达本发明的概念。
图3示出了根据本发明所提供的阵列基板的一种实施方式,其包括:显示区和封装区,所述封装区包括多层功能层,所述封装区包括:通孔904,所述通孔贯穿至少一层功能层,封装胶通过所述通孔流入;沟槽905,所述沟槽设置在至少部分所述通孔上方,其中,所述至少部分通孔在阵列基板的衬底基板上的投影区域位于所述沟槽在所述衬底基板上的投影区域内。通过本发明所提供的阵列基板,其可以在激光融化封装胶时,因为沟槽的设置,可以起到导胶的作用,避免传统工艺中只有单一通孔造成的封装胶的溢出,并且通过沟槽与通孔的配合,可以增强封装位置处的机械强度,减少封装后阵列基板内部残余应力,降低裂开风险,工艺兼容性强,简单可行。
在本发明的实施方式中,所述功能层包括层叠的第一膜层、第二膜层和第三膜层;所述第一膜层较所述第二膜层以及第三膜层远离所述衬底基板;所述通孔包括第一通孔、第二通孔;所述第一通孔贯穿第一膜层、第二膜层和第三膜层,所述第二通孔贯穿第二膜层;所述沟槽包括设置在第二通孔上方的第一沟槽。
在本发明的实施方式中,所述通孔还包括第三通孔;所述第三通孔贯穿第二膜层和第三膜层;所述沟槽还包括设置在第三通孔上方的第二沟槽和/或设置在第二通孔和第三通孔上方的第三沟槽。
具体的,在图3所示出的阵列基板,该阵列基板包括衬底基板100 (可以是玻璃基板)、缓冲层201、栅绝缘层202、栅金属层203、中间绝缘层204、源漏极金属层205、有机层206、隔离柱207以及盖板玻璃900。所述第一膜层为源漏极金属层205;所述第二膜层为中间绝缘层204;所述第三膜层为栅金属层203。但是,上述第一膜层、第二膜层以及第三膜层的具体形式不构成对本发明的限定,本实施例以依次层叠的源漏极金属层205、中间绝缘层204以及栅金属层203为例进行说明,但是第一膜层、第二膜层以及第三膜层的位置关系不限于此,如第一膜层为漏极金属层205、第二膜层为栅金属层203、第三膜层为中间绝缘层204等,相应的第一沟槽采用对漏极金属层205、中间绝缘层204进行构图工艺形成即可。另外,第一膜层、第二膜层以及第三膜层也可以是阵列基板的其他层,如钝化层、半导体层、有机电致发光层等。
本申请实施例中,以位于第二通孔以及第三通孔上方的第三沟槽905为例,由于设置了沟槽,如第三沟槽905,并且所述第二通孔以及第三通孔在衬底基板上的投影区域位于所述沟槽905在所述衬底基板上的投影区域内,也即是说第三沟槽905在衬底基板上的投影区域面积大于所述第二通孔以及第三通孔在衬底基板上的投影区域的面积,从而在利用激光对封装胶进行融化时,沟槽可以起到导胶的作用,封装胶不会外溢,从而解决了现有技术中的封装胶外溢的问题。同时,由于通孔贯穿了不同的膜层,也即是不同深度的通孔,可以平衡内部应力,减少激光融化后残余应力,降低裂开风险。
本发明的实施方式中,沟槽也可以对应的单独设置在第二通孔以及第三上方,如第一沟槽以及第二沟槽(图中未示出)。
如图4所示,其示出了本发明所提供的阵列基板的又一实施方式,为了便于说明,图4仅仅示出了与通孔有关的阵列基板的功能层。为了表述清楚,图4中分别以附图标记9041、9042以及9043来分别表示第一通孔、第二通孔以及第三通孔。图4分别示出了阵列基板的部分功能层:玻璃基板100、缓冲层201、栅绝缘层202、栅金属层203、中间绝缘层204、源漏极金属层205。与图3的实施方式不同之处在于,第一通孔9041以及第三通孔9043的截面设置成倒T形结构。由于上述 倒T形的结构,可以使更多的封装胶容纳在通孔中,从而增强封装位置处的机械强度。需要说明的是任一通孔均可设置倒T形的结构,考虑到工艺的难度,优选可以将第一通孔9041以及第三通孔9043的截面设置成倒T形结构。
图5也示出了具有倒T形截面形状的通孔。
如图3-5所示,根据本发明的实施方式,通孔包括不同深度的通孔。具体的,如图4所示,阵列基板的功能层包括从上自下依次设置的源漏极金属层205(第一膜层)、中间绝缘层204(第二膜层)以及栅金属层203(第三膜层),所述通孔包括:从源漏极金属层、中间绝缘层到栅金属层贯穿的第一通孔9041;从中间绝缘层贯穿的第二通孔9042;从中间绝缘层到栅金属层贯穿的第三通孔9043。采用不同深度的通孔,从而,所提供的阵列基板可以减少封装后阵列基板内部残余应力,降低裂开风险。
在本发明的实施方式中,所述功能层还包括第四膜层,所述通孔还包括第四通孔,其中,所述第四通孔贯穿第二膜层、第三膜层和第四膜层;所述沟槽还包括设置在第四通孔上方的第四沟槽和/或设置在第二通孔以及第四通孔上方的第五沟槽。
具体的,如图5所示,阵列基板的功能层包括从上自下依次设置的源漏极金属层205、中间绝缘层204、栅金属层203以及栅绝缘层202(第四膜层),所述通孔包括:从源漏极金属层、中间绝缘层到栅金属层贯穿的第一通孔9041;从中间绝缘层、栅金属层到栅绝缘层贯穿的第四通孔9044;从中间绝缘层到栅金属层贯穿的第三通孔9043。所述沟槽可以包括设置在第四通孔9044上方的第四沟槽,或者同时设置在第三通孔9043以及第四通孔9044上方的第五沟槽。
上述分别示出了本发明所提供的阵列基板的不同的实施方式,但是上述实施方式并不是对本发明的限定,并且上述实施方式之间可以结合也可以单独使用,例如,本领域技术人员可以采用具有沟槽和通孔的阵列基板;再例如,本领域技术人员可以采用具有沟槽和不同深度的通孔等。
本发明还提供一种显示面板,所述阵列基板包括封装胶以及上述 的阵列基板,所述封装胶位于所述封装区内。
本发明还提供一种显示装置,所述显示装置包括上述的显示面板。
此外,本发明提供了制造上述阵列基板的方法,其包括以下步骤:形成显示区和封装区,所述封装区包括多层功能层;形成封装区的步骤还包括:形成通孔,所述通孔贯穿至少一层功能层,所述通孔用于使封装胶通过所述通孔流入;形成沟槽,所述沟槽位于至少部分所述通孔上方,其中,所述至少部分通孔在阵列基板的衬底基板上的投影区域位于所述沟槽在所述衬底基板上的投影区域内。在具体的实施方式中,上述方法还包括步骤:在所述功能层底部形成倒T形通孔。在形成通孔的步骤中,所述通孔形成为不同的深度。本发明所提供的方法,不需要另外增加掩模工艺,只需改变掩膜版的构图形状,即可完成上述的制作,工艺兼容性强,简单可行。
在本发明优选的实施方式中,在形成封装区的步骤中,形成所述功能层使其包括第一膜层、第二膜层和第三膜层,所述第一膜层较所述第二膜层以及第三膜层远离所述衬底基板;通过构图工艺在第一膜层上形成第一沟槽;通过构图工艺形成所述第一通孔、第二通孔,其中,所述第一通孔贯穿第一膜层、第二膜层和第三膜层,所述第二通孔贯穿第二膜层,所述第一沟槽位于第二通孔上方。
其中一种实施例中,第一膜层为源漏极金属层;所述第二膜层为中间绝缘层;所述第三膜层为栅金属层,首先沉积栅金属层,并对栅金属层进行构图工艺,通过掩模板进行曝光,显影,通过干法刻蚀在显示区形成栅极图形,在封装区形成栅金属层图形;其次,利用光阻涂层对有效显示区域进行保护,然后,倒T形通孔在如下步骤中形成:在利用湿刻法对封装区的栅金属层进行处理,在栅金属层底部形成贯穿栅金属层倒T形通孔,接着继续沉积中间绝缘层以及源漏金属层,在对应的位置进行过孔的刻蚀,其中与在栅金属层形成的倒T形通孔相接的部分过孔会形成完整的过孔,如第一过孔、第三过孔。
本发明实施例中,沟槽的形成可以形成在第一膜层中,通过刻蚀形成沟槽后,再在沟槽的区域内形成位于其下方的通孔,如图3所示, 通过构图工艺在源漏金属层上形成第三沟槽905后,暴露出中间绝缘层204,再通过刻蚀,形成位于第三沟槽905区域内的第二通孔以及第三通孔;也可以先形成第二通孔以及第三通孔,待在其上沉积第一膜层(源漏金属层)后,在第二通孔以及第三通孔对应的位置处刻蚀第三沟槽,同时将残留在第二通孔以及第三通孔中的源漏金属材料也刻蚀去除掉即可。需要说明的是,通孔以及沟槽的形成不限于此,本领域技术人员可以根据需要采取可行的形成方案,如通孔可以在各个功能层上分别制作,最后对接即可,也可以采用一次构图工艺形成通孔,可以根据功能膜层的厚度进行相应的选择。
在本发明的实施方式中,所述形成封装区的步骤还包括:形成第四膜层;通过构图工艺形成第四通孔;所述第四通孔贯穿第二膜层、第三膜层和第四膜层;通过构图工艺在第一膜层上形成第四沟槽和/或第五沟槽;所述第四沟槽位于所述第四通孔上方;所述第五沟槽位于所述第二通孔和第四通孔上方。具体形成方法与上述形成通孔以及沟槽的方法类似,在此不再赘述。
进一步的,以下描述根据本发明的阵列基板进行封装的过程。
如图6所示,在对盒完成后,利用激光照射封装胶涂布区域,封装胶902融化,融化的封装胶902通过沟槽905流入到通孔904,最后完成封装。
尽管对本发明的实施例进行了展示和描述,但本领域技术人员将会理解在不偏离本发明的原理和实质的情况下,可对这些实施例进行改变,其范围也落入本发明的权利要求及其等同物所限定的范围内。
Claims (12)
1.一种阵列基板,其包括:显示区和封装区,所述封装区包括衬底基板和位于所述衬底基板之上的多层功能层,所述封装区还包括
通孔,所述通孔贯穿至少一层功能层,所述通孔用于使封装胶通过所述通孔流入;
沟槽,所述沟槽设置在至少部分所述通孔上方,其中,所述至少部分通孔在阵列基板的衬底基板上的投影区域位于所述沟槽在所述衬底基板上的投影区域内;其中,
所述功能层包括层叠的第一膜层、第二膜层和第三膜层;所述第一膜层较所述第二膜层以及第三膜层远离所述衬底基板;
所述通孔包括第一通孔、第二通孔;
所述第一通孔贯穿第一膜层、第二膜层和第三膜层,
所述第二通孔贯穿第二膜层;
所述沟槽包括设置在第二通孔上方的第一沟槽。
2.根据权利要求1所述的阵列基板,其中,
所述通孔的截面设置成倒T形结构。
3.根据权利要求1所述的阵列基板,其中,
所述通孔还包括第三通孔;
所述第三通孔贯穿第二膜层和第三膜层;
所述沟槽还包括设置在第三通孔上方的第二沟槽和/或设置在第二通孔和第三通孔上方的第三沟槽。
4.根据权利要求1所述的阵列基板,其中,
所述功能层还包括第四膜层,
所述通孔还包括第四通孔,其中,
所述第四通孔贯穿第二膜层、第三膜层和第四膜层;
所述沟槽还包括设置在第四通孔上方的第四沟槽和/或设置在第二通孔以及第四通孔上方的第五沟槽。
5.根据权利要求1所述的阵列基板,其中,
所述第一膜层为源漏极金属层;
所述第二膜层为中间绝缘层;
所述第三膜层为栅金属层。
6.根据权利要求4所述的阵列基板,其中,
所述第一膜层为源漏极金属层;
所述第二膜层为中间绝缘层;
所述第三膜层为栅金属层;
所述第四膜层为栅绝缘层。
7.一种显示面板,所述显示面板包括封装胶以及如权利要求1-6任一项所述的阵列基板,所述封装胶位于所述封装区内。
8.一种显示装置,所述显示装置包括权利要求7所述的显示面板。
9.一种制造权利要求1所述的阵列基板的方法,其包括以下步骤:
形成显示区和封装区,所述封装区包括多层功能层;
形成封装区的步骤还包括:
形成通孔,所述通孔贯穿至少一层功能层,所述通孔用于使封装胶通过所述通孔流入;
形成沟槽,所述沟槽位于至少部分所述通孔上方,其中,所述至少部分通孔在阵列基板的衬底基板上的投影区域位于所述沟槽在所述衬底基板上的投影区域内;
其中,在形成封装区的步骤中,
形成所述功能层使其包括第一膜层、第二膜层和第三膜层,所述第一膜层较所述第二膜层以及第三膜层远离所述衬底基板;
通过构图工艺在第一膜层上形成第一沟槽;
通过构图工艺形成第一通孔、第二通孔,其中,
所述第一通孔贯穿第一膜层、第二膜层和第三膜层,
所述第二通孔贯穿第二膜层,
所述第一沟槽位于第二通孔上方。
10.根据权利要求9所述的方法,还包括步骤:
在所述功能层底部形成倒T形通孔。
11.根据权利要求9所述的方法,其中,所述形成封装区的步骤还包括:
通过构图工艺形成第三通孔;
所述第三通孔贯穿第二膜层和第三膜层;
通过构图工艺在第一膜层上形成第二沟槽和/或第三沟槽;
所述第二沟槽位于所述第三通孔上方;所述第三沟槽位于所述第二通孔和第三通孔上方。
12.根据权利要求9所述的方法,其中,所述形成封装区的步骤还包括:
形成第四膜层;
通过构图工艺形成第四通孔;
所述第四通孔贯穿第二膜层、第三膜层和第四膜层;
通过构图工艺在第一膜层上形成第四沟槽和/或第五沟槽;
所述第四沟槽位于所述第四通孔上方;所述第五沟槽位于所述第二通孔和第四通孔上方。
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