JP2012506144A - ビア配線を作るための方法 - Google Patents
ビア配線を作るための方法 Download PDFInfo
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Abstract
Description
この発明は、基板の一方の側から他方の側への電気ビア配線を含む基板を製造するための方法に関する。
マイクロエレクトロニクスおよびマイクロ電気機械システム(microelectromechanical systems:MEMS)の分野では、さらにより一層小型化されたデバイスおよびより高度の機能性に向かう急速な発展が、実装能力および配線能力によって制限されている。
本願の目的のために、「基板」という用語は、エレクトロニクス、マイクロエレクトロニクス、およびMEMSの分野において一般にウェハと呼ばれるものを指すよう意図されている。基板は好ましくは、結晶シリコンといった結晶半導体材料を含む。しかしながら、これが限定を含まないことは明らかであるはずである。なぜなら、より一般的には、SixGe1-x(0≦x≦1)、または、これらの目的のためによく使用される任意の他の材料が使用可能なためである。基板は単結晶であってもよく、または、それは互いに積層された2つ以上の層を含んでいてもよい。これらの層はすべて半導体材料で作られてもよいが、1つ以上の層が絶縁体材料、誘電材料、金属、または金属合金で作られてもよく、それらは、堆積、成長、接合、またはそれらの組合せによって、基板に既に含まれていてもよい。たとえば、それは、いわゆるシリコン・オン・インシュレータ(silicon-on-insulator:SOI)基板であってもよい。1つ以上の層が、たとえばパッドまたはルーティングを形成する限定された横方向延在部を有していてもよい。さらに、基板またはその表面に、パッドおよび/または部品が既に含まれていてもよい。
ビアホール9の第1の縦方向部分11をエッチングするステップと、
ビアホール9の第2の縦方向部分12をエッチングするステップとを含み、それにより、第1の縦方向部分11および第2の縦方向部分12はともにビアホール9を実質的に形成する。言い換えると、ビアホール9を形成するためにエッチングされるべき基板3のごく一部が残されるまで、エッチングは続けられる。第1の縦方向部分11および第2の縦方向部分12のエッチングのため、ビアホール9の開口部24を規定する狭窄部23が形成される。その後、狭窄部23がエッチングマスクとして機能している状態でエッチングすることによってビアホール9が開けられる。すなわち、残された基板の一部がエッチングで除去される。
図5aに概略的に示すように、基板3の下側5に、傾斜側壁18を有する窪み28を形成するステップと、
図5bに概略的に示すように、異方性エッチングによって狭窄部23の下方傾斜壁20を形成するステップとを含み、下方傾斜壁20は、窪み28の傾斜壁18および第1の縦方向部分11の複製(replicas)であり、それにより、下方傾斜壁20と下側5との間に実質的に垂直の側壁が形成される。
Claims (16)
- 電子デバイス用の基板(3)の下側(5)から基板(3)を少なくとも部分的に通って基板(3)の上側(4)に向かうビアホール(9)を形成する方法であって、前記方法は、
ビアホール(9)の第1の縦方向部分(11)をエッチングするステップと、
ビアホール(9)の第2の縦方向部分(12)をエッチングするステップとを含み、それにより、第1の縦方向部分(11)および第2の縦方向部分(12)はビアホール(9)を実質的に形成し、ビアホール(9)に狭窄部(23)が形成され、
狭窄部(23)がビアホール(9)の開口部(24)を規定すること、および、前記方法が、狭窄部(23)がエッチングマスクとして機能している状態でエッチングすることによってビアホール(9)を開けるステップをさらに含むことを特徴とする、方法。 - ビアホール(9)の第2の縦方向部分のエッチングの際、ビアホール(9)は上側(4)に向かって開口部(24)から外側に広がる、請求項1に記載の方法。
- ビアホール(9)の第2の縦方向部分のエッチングは、等方性エッチングを含む、請求項2に記載の方法。
- ビアホール(9)を開けるステップは、異方性エッチングを含む、請求項1または3に記載の方法。
- 異方性エッチングはイオンミリングを含み、それにより、基板(3)に当たるイオンまたは他の荷電粒子の一部が開口部(24)を通過して異方性エッチングに寄与する、請求項4に記載の方法。
- 基板(3)は、基板(3)の上側(4)に形成された2つ以上の異なる材料の個々の層を含む多層構造(8)を含み、ビアホール(9)を開けるステップは、多層構造(8)の等方性エッチングを含む、請求項1または2に記載の方法。
- 基板(3)は、基板(3)の上側(4)に形成された2つ以上の異なる材料の個々の層を含む多層構造(8)を含み、ビアホール(9)の第2の縦方向部分(12)をエッチングするステップは、多層構造(8)の異方性エッチングを含む、請求項6に記載の方法。
- 基板(3)はエッチング停止層(10)を含み、第2の縦方向部分(12)の長手方向におけるエッチングはエッチング停止層(10)によって停止され、開けるステップは、エッチング停止層(10)のエッチングを含む、請求項1〜6のいずれかに記載の方法。
- ビアホール(9)を開けるステップの前に、ビアホール(9)の少なくとも側壁を薄膜で覆うステップをさらに含む、請求項6〜8のいずれかに記載の方法。
- ビアホール(9)の第1の縦方向部分をエッチングするステップは、
基板(3)の下側(5)に、傾斜側壁(18)を有する窪み(28)を形成するステップと、
異方性エッチングによって狭窄部(23)の下方傾斜壁(20)を形成するステップとを含み、下方傾斜壁(20)は、窪み(28)の傾斜壁(18)および第1の縦方向部分(11)の複製であり、それにより、下方傾斜壁(20)と下側(5)との間に実質的に垂直の側壁が形成される、請求項1に記載の方法。 - ビアホール(9)の断面は、上側(4)または下側(5)から見ると、細長く、好ましくは矩形である、上述の請求項のいずれかに記載の方法。
- 基板(3)の下側(5)から基板(3)を少なくとも部分的に通って基板(3)の上側(4)に向かうビア(7)を形成する方法であって、
請求項1〜11のいずれかに記載のビアホールを形成するステップと、
ビアホール(9)を通る導電経路を提供するために、ビアホール(9)を導電性材料で少なくとも部分的に充填するステップとを含む、方法。 - 請求項12に記載のビア(7)を形成する方法を含む、密封された空洞(30)を形成する方法であって、ビア(7)は、密封された空洞(30)と基板(3)の下側(5)との電気的接続を提供し、ビアは、空洞内に少なくとも部分的に位置する導電トレース(31)またはパッドまで開けられ、それにより、下側(5)から密封された空洞(30)まで電気的接続が形成される、方法。
- 電気デバイス用の基板(3)であって、基板(3)の下側(5)から基板(3)を少なくとも部分的に通って基板(3)の上側(4)に向かうビアホール(9)を含み、
基板(3)は、基板(3)の上側(4)に形成された2つ以上の異なる材料の個々の層を含む多層構造(8)を含み、
ビアホールは、多層構造(8)を通って延在し、
ビアホール(9)は、ビアホール(9)を通る導電経路を提供するために、導電性材料で少なくとも部分的に充填され、それによりビア配線(7)を形成しており、
前記基板は、
ビアホールが、ビアホール(9)に開口部(24)を形成する狭窄部(23)を含むこと、
ビアホール(9)が、上側(4)に向かって、かつ多層構造(8)内へと、開口部(24)から外側に広がること、および、
ビアホールが、開口部(24)の幅に本質的に対応する幅を有して上方に開いていることを特徴とする、基板(3)。 - ビアホール(9)の断面は、上側(4)または下側(5)から見ると、好ましくは矩形である、請求項14に記載の基板(3)。
- ビアホールは、実質的に垂直の側壁(16)と下方傾斜壁(20)とを含む第1の縦方向部分(11)を含み、下方傾斜側壁(20)は狭窄部(23)の一部であり、実質的に垂直の側壁(16)は下側(5)から下方傾斜側壁(20)まで延在している、請求項15に記載の基板(3)。
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CN102246299B (zh) | 2014-12-10 |
EP2338171A1 (en) | 2011-06-29 |
KR20110069877A (ko) | 2011-06-23 |
WO2010044741A1 (en) | 2010-04-22 |
JP5654471B2 (ja) | 2015-01-14 |
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US20110201197A1 (en) | 2011-08-18 |
HK1163935A1 (en) | 2012-09-14 |
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