JP2005116102A5 - - Google Patents

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Publication number
JP2005116102A5
JP2005116102A5 JP2003351068A JP2003351068A JP2005116102A5 JP 2005116102 A5 JP2005116102 A5 JP 2005116102A5 JP 2003351068 A JP2003351068 A JP 2003351068A JP 2003351068 A JP2003351068 A JP 2003351068A JP 2005116102 A5 JP2005116102 A5 JP 2005116102A5
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JP
Japan
Prior art keywords
memory cell
voltage
bit line
sense node
sense
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JP2003351068A
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English (en)
Japanese (ja)
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JP2005116102A (ja
JP4287235B2 (ja
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Priority to JP2003351068A priority Critical patent/JP4287235B2/ja
Priority claimed from JP2003351068A external-priority patent/JP4287235B2/ja
Priority to US10/867,679 priority patent/US7016230B2/en
Priority to KR1020040080333A priority patent/KR100632329B1/ko
Publication of JP2005116102A publication Critical patent/JP2005116102A/ja
Publication of JP2005116102A5 publication Critical patent/JP2005116102A5/ja
Priority to US11/326,296 priority patent/US7333371B2/en
Application granted granted Critical
Publication of JP4287235B2 publication Critical patent/JP4287235B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003351068A 2003-10-09 2003-10-09 不揮発性半導体記憶装置 Expired - Fee Related JP4287235B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003351068A JP4287235B2 (ja) 2003-10-09 2003-10-09 不揮発性半導体記憶装置
US10/867,679 US7016230B2 (en) 2003-10-09 2004-06-16 Non-volatile semiconductor memory device
KR1020040080333A KR100632329B1 (ko) 2003-10-09 2004-10-08 불휘발성 반도체 기억 장치
US11/326,296 US7333371B2 (en) 2003-10-09 2006-01-06 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003351068A JP4287235B2 (ja) 2003-10-09 2003-10-09 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005116102A JP2005116102A (ja) 2005-04-28
JP2005116102A5 true JP2005116102A5 (enExample) 2005-11-24
JP4287235B2 JP4287235B2 (ja) 2009-07-01

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Family Applications (1)

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JP2003351068A Expired - Fee Related JP4287235B2 (ja) 2003-10-09 2003-10-09 不揮発性半導体記憶装置

Country Status (3)

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US (2) US7016230B2 (enExample)
JP (1) JP4287235B2 (enExample)
KR (1) KR100632329B1 (enExample)

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CN105719694B (zh) * 2016-01-22 2019-12-03 清华大学 Nand存储器的多比特编程方法及装置
JP6659478B2 (ja) * 2016-06-17 2020-03-04 キオクシア株式会社 半導体記憶装置
CN108962324B (zh) 2017-05-24 2020-12-15 华邦电子股份有限公司 存储器存储装置
TWI707364B (zh) * 2017-05-24 2020-10-11 華邦電子股份有限公司 記憶體儲存裝置及其操作方法
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JP6677786B1 (ja) * 2018-11-20 2020-04-08 力晶積成電子製造股▲ふん▼有限公司Ｐｏｗｅｒｃｈｉｐ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ ページバッファ回路及び不揮発性記憶装置
CN111312318B (zh) * 2018-12-12 2022-03-01 北京兆易创新科技股份有限公司 一种非易失存储器控制方法以及装置
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