JP4287235B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP4287235B2
JP4287235B2 JP2003351068A JP2003351068A JP4287235B2 JP 4287235 B2 JP4287235 B2 JP 4287235B2 JP 2003351068 A JP2003351068 A JP 2003351068A JP 2003351068 A JP2003351068 A JP 2003351068A JP 4287235 B2 JP4287235 B2 JP 4287235B2
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Japan
Prior art keywords
voltage
data
bit line
memory cell
sense node
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Expired - Fee Related
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JP2003351068A
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English (en)
Japanese (ja)
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JP2005116102A (ja
JP2005116102A5 (enExample
Inventor
浩司 細野
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Toshiba Corp
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Toshiba Corp
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Priority to JP2003351068A priority Critical patent/JP4287235B2/ja
Priority to US10/867,679 priority patent/US7016230B2/en
Priority to KR1020040080333A priority patent/KR100632329B1/ko
Publication of JP2005116102A publication Critical patent/JP2005116102A/ja
Publication of JP2005116102A5 publication Critical patent/JP2005116102A5/ja
Priority to US11/326,296 priority patent/US7333371B2/en
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Publication of JP4287235B2 publication Critical patent/JP4287235B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells

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  • Read Only Memory (AREA)
JP2003351068A 2003-10-09 2003-10-09 不揮発性半導体記憶装置 Expired - Fee Related JP4287235B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003351068A JP4287235B2 (ja) 2003-10-09 2003-10-09 不揮発性半導体記憶装置
US10/867,679 US7016230B2 (en) 2003-10-09 2004-06-16 Non-volatile semiconductor memory device
KR1020040080333A KR100632329B1 (ko) 2003-10-09 2004-10-08 불휘발성 반도체 기억 장치
US11/326,296 US7333371B2 (en) 2003-10-09 2006-01-06 Non-volatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003351068A JP4287235B2 (ja) 2003-10-09 2003-10-09 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2005116102A JP2005116102A (ja) 2005-04-28
JP2005116102A5 JP2005116102A5 (enExample) 2005-11-24
JP4287235B2 true JP4287235B2 (ja) 2009-07-01

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JP2003351068A Expired - Fee Related JP4287235B2 (ja) 2003-10-09 2003-10-09 不揮発性半導体記憶装置

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US (2) US7016230B2 (enExample)
JP (1) JP4287235B2 (enExample)
KR (1) KR100632329B1 (enExample)

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JP2008084471A (ja) 2006-09-28 2008-04-10 Toshiba Corp 半導体記憶装置
US20080158986A1 (en) * 2006-12-29 2008-07-03 Daniel Elmhurst Flash memory and associated methods
KR100902008B1 (ko) * 2007-02-09 2009-06-12 삼성전자주식회사 메모리 셀에 멀티 비트 데이터를 저장하는 플래시 메모리를 포함한 메모리 시스템
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JP4504397B2 (ja) * 2007-05-29 2010-07-14 株式会社東芝 半導体記憶装置
US7492640B2 (en) 2007-06-07 2009-02-17 Sandisk Corporation Sensing with bit-line lockout control in non-volatile memory
US7489553B2 (en) * 2007-06-07 2009-02-10 Sandisk Corporation Non-volatile memory with improved sensing having bit-line lockout control
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KR101248942B1 (ko) * 2007-10-17 2013-03-29 삼성전자주식회사 비휘발성 메모리 장치
JP2009295221A (ja) * 2008-06-04 2009-12-17 Toshiba Corp 半導体記憶装置
JP2009301607A (ja) 2008-06-10 2009-12-24 Toshiba Corp 不揮発性半導体記憶装置およびその制御方法
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JP5159477B2 (ja) * 2008-07-08 2013-03-06 株式会社東芝 不揮発性半導体記憶装置およびその消去検証方法
US7889572B2 (en) * 2008-09-04 2011-02-15 Macronix International Co., Ltd. Memory with high reading performance and reading method thereof
JP4856138B2 (ja) 2008-09-12 2012-01-18 株式会社東芝 不揮発性半導体記憶装置
JP5193830B2 (ja) * 2008-12-03 2013-05-08 株式会社東芝 不揮発性半導体メモリ
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US8520441B2 (en) * 2010-11-16 2013-08-27 Sandisk Technologies Inc. Word line kicking when sensing non-volatile storage
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US9147480B2 (en) * 2011-12-16 2015-09-29 Macronix International Co., Ltd. Current sensing type sense amplifier and method thereof
US8995202B2 (en) 2012-05-21 2015-03-31 Freescale Semiconductor, Inc. Test flow to detect a latent leaky bit of a non-volatile memory
US8947958B2 (en) * 2012-10-09 2015-02-03 Freescale Semiconductor, Inc. Latent slow bit detection for non-volatile memory
US9136006B2 (en) * 2013-03-11 2015-09-15 Macronix International Co., Ltd. Method and device for reducing coupling noise during read operation
US9123430B2 (en) * 2013-06-14 2015-09-01 Sandisk 3D Llc Differential current sense amplifier and method for non-volatile memory
TW201535385A (zh) * 2014-03-14 2015-09-16 Toshiba Kk 非揮發性半導體記憶裝置及記憶體系統
KR101615742B1 (ko) * 2014-03-27 2016-04-26 고려대학교 산학협력단 정적 랜덤 액세스 메모리 및 그 구동 방법
JP6290034B2 (ja) * 2014-08-07 2018-03-07 東芝メモリ株式会社 不揮発性半導体記憶装置、及びその読み出し方法
US9312018B1 (en) 2014-09-24 2016-04-12 Intel Corporation Sensing with boost
KR102222594B1 (ko) 2014-11-13 2021-03-08 삼성전자주식회사 비휘발성 메모리 장치, 그것의 소거 방법, 및 그것을 포함하는 메모리 시스템
CN105719694B (zh) * 2016-01-22 2019-12-03 清华大学 Nand存储器的多比特编程方法及装置
JP6659478B2 (ja) * 2016-06-17 2020-03-04 キオクシア株式会社 半導体記憶装置
TWI707364B (zh) * 2017-05-24 2020-10-11 華邦電子股份有限公司 記憶體儲存裝置及其操作方法
CN108962324B (zh) 2017-05-24 2020-12-15 华邦电子股份有限公司 存储器存储装置
US10121522B1 (en) * 2017-06-22 2018-11-06 Sandisk Technologies Llc Sense circuit with two sense nodes for cascade sensing
JP6677786B1 (ja) * 2018-11-20 2020-04-08 力晶積成電子製造股▲ふん▼有限公司Ｐｏｗｅｒｃｈｉｐ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ ページバッファ回路及び不揮発性記憶装置
CN111312318B (zh) * 2018-12-12 2022-03-01 北京兆易创新科技股份有限公司 一种非易失存储器控制方法以及装置
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Also Published As

Publication number Publication date
JP2005116102A (ja) 2005-04-28
US20060114733A1 (en) 2006-06-01
US7333371B2 (en) 2008-02-19
US7016230B2 (en) 2006-03-21
KR20050034560A (ko) 2005-04-14
US20050078524A1 (en) 2005-04-14
KR100632329B1 (ko) 2006-10-11

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