KR100632329B1 - 불휘발성 반도체 기억 장치 - Google Patents

불휘발성 반도체 기억 장치 Download PDF

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KR100632329B1
KR100632329B1 KR1020040080333A KR20040080333A KR100632329B1 KR 100632329 B1 KR100632329 B1 KR 100632329B1 KR 1020040080333 A KR1020040080333 A KR 1020040080333A KR 20040080333 A KR20040080333 A KR 20040080333A KR 100632329 B1 KR100632329 B1 KR 100632329B1
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data
voltage
node
bit line
memory cell
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KR20050034560A (ko
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호소노고지
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가부시끼가이샤 도시바
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells

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  • Read Only Memory (AREA)
KR1020040080333A 2003-10-09 2004-10-08 불휘발성 반도체 기억 장치 Expired - Fee Related KR100632329B1 (ko)

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JPJP-P-2003-00351068 2003-10-09
JP2003351068A JP4287235B2 (ja) 2003-10-09 2003-10-09 不揮発性半導体記憶装置

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KR20050034560A KR20050034560A (ko) 2005-04-14
KR100632329B1 true KR100632329B1 (ko) 2006-10-11

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US (2) US7016230B2 (enExample)
JP (1) JP4287235B2 (enExample)
KR (1) KR100632329B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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US9129696B2 (en) 2011-09-29 2015-09-08 Samsung Electronics Co., Ltd. Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same

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KR100745600B1 (ko) * 2005-11-07 2007-08-02 삼성전자주식회사 상 변화 메모리 장치 및 그것의 읽기 방법
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JP4805698B2 (ja) * 2006-03-13 2011-11-02 株式会社東芝 半導体記憶装置
KR100694972B1 (ko) * 2006-03-27 2007-03-14 주식회사 하이닉스반도체 센싱 노드용 프리차지 전압을 선택적으로 변경하는 기능을가지는 플래시 메모리 장치 및 그 독출 동작 방법
US7593259B2 (en) * 2006-09-13 2009-09-22 Mosaid Technologies Incorporated Flash multi-level threshold distribution scheme
JP2008084471A (ja) 2006-09-28 2008-04-10 Toshiba Corp 半導体記憶装置
US20080158986A1 (en) * 2006-12-29 2008-07-03 Daniel Elmhurst Flash memory and associated methods
KR100902008B1 (ko) * 2007-02-09 2009-06-12 삼성전자주식회사 메모리 셀에 멀티 비트 데이터를 저장하는 플래시 메모리를 포함한 메모리 시스템
KR100826653B1 (ko) * 2007-04-06 2008-05-06 주식회사 하이닉스반도체 낸드 플래시 메모리소자의 소거검증 방법
JP4504397B2 (ja) * 2007-05-29 2010-07-14 株式会社東芝 半導体記憶装置
US7492640B2 (en) 2007-06-07 2009-02-17 Sandisk Corporation Sensing with bit-line lockout control in non-volatile memory
US7489553B2 (en) * 2007-06-07 2009-02-10 Sandisk Corporation Non-volatile memory with improved sensing having bit-line lockout control
CN101711415B (zh) * 2007-06-07 2014-10-22 桑迪士克科技股份有限公司 具有位线封锁控制的非易失存储器和用于改进的感测的方法
KR101248942B1 (ko) * 2007-10-17 2013-03-29 삼성전자주식회사 비휘발성 메모리 장치
JP2009295221A (ja) * 2008-06-04 2009-12-17 Toshiba Corp 半導体記憶装置
JP2009301607A (ja) 2008-06-10 2009-12-24 Toshiba Corp 不揮発性半導体記憶装置およびその制御方法
EP2133882B1 (en) * 2008-06-13 2015-08-12 EM Microelectronic-Marin SA Non-volatile memory device and method for secure readout of protected data
JP5159477B2 (ja) * 2008-07-08 2013-03-06 株式会社東芝 不揮発性半導体記憶装置およびその消去検証方法
US7889572B2 (en) * 2008-09-04 2011-02-15 Macronix International Co., Ltd. Memory with high reading performance and reading method thereof
JP4856138B2 (ja) 2008-09-12 2012-01-18 株式会社東芝 不揮発性半導体記憶装置
JP5193830B2 (ja) * 2008-12-03 2013-05-08 株式会社東芝 不揮発性半導体メモリ
US7974133B2 (en) * 2009-01-06 2011-07-05 Sandisk Technologies Inc. Robust sensing circuit and method
US8050092B2 (en) * 2009-05-29 2011-11-01 Seagate Technology Llc NAND flash memory with integrated bit line capacitance
JP2011054249A (ja) 2009-09-02 2011-03-17 Toshiba Corp 半導体記憶装置
JP2011065693A (ja) * 2009-09-16 2011-03-31 Toshiba Corp 不揮発性半導体記憶装置
US8233337B2 (en) * 2009-10-19 2012-07-31 International Business Machines Corporation SRAM delay circuit that tracks bitcell characteristics
JP2011146100A (ja) * 2010-01-15 2011-07-28 Toshiba Corp 半導体記憶装置及びその読出し方法
JP5343916B2 (ja) 2010-04-16 2013-11-13 富士通セミコンダクター株式会社 半導体メモリ
KR101662703B1 (ko) 2010-06-09 2016-10-14 삼성전자 주식회사 플래시 메모리 장치 및 플래시 메모리 장치의 독출 방법
JP2012169002A (ja) * 2011-02-14 2012-09-06 Toshiba Corp 半導体記憶装置
US8520441B2 (en) * 2010-11-16 2013-08-27 Sandisk Technologies Inc. Word line kicking when sensing non-volatile storage
US9588883B2 (en) 2011-09-23 2017-03-07 Conversant Intellectual Property Management Inc. Flash memory system
US9147480B2 (en) * 2011-12-16 2015-09-29 Macronix International Co., Ltd. Current sensing type sense amplifier and method thereof
US8995202B2 (en) 2012-05-21 2015-03-31 Freescale Semiconductor, Inc. Test flow to detect a latent leaky bit of a non-volatile memory
US8947958B2 (en) * 2012-10-09 2015-02-03 Freescale Semiconductor, Inc. Latent slow bit detection for non-volatile memory
US9136006B2 (en) * 2013-03-11 2015-09-15 Macronix International Co., Ltd. Method and device for reducing coupling noise during read operation
US9123430B2 (en) * 2013-06-14 2015-09-01 Sandisk 3D Llc Differential current sense amplifier and method for non-volatile memory
TW201535385A (zh) * 2014-03-14 2015-09-16 Toshiba Kk 非揮發性半導體記憶裝置及記憶體系統
KR101615742B1 (ko) * 2014-03-27 2016-04-26 고려대학교 산학협력단 정적 랜덤 액세스 메모리 및 그 구동 방법
JP6290034B2 (ja) * 2014-08-07 2018-03-07 東芝メモリ株式会社 不揮発性半導体記憶装置、及びその読み出し方法
US9312018B1 (en) 2014-09-24 2016-04-12 Intel Corporation Sensing with boost
KR102222594B1 (ko) 2014-11-13 2021-03-08 삼성전자주식회사 비휘발성 메모리 장치, 그것의 소거 방법, 및 그것을 포함하는 메모리 시스템
CN105719694B (zh) * 2016-01-22 2019-12-03 清华大学 Nand存储器的多比特编程方法及装置
JP6659478B2 (ja) * 2016-06-17 2020-03-04 キオクシア株式会社 半導体記憶装置
TWI707364B (zh) * 2017-05-24 2020-10-11 華邦電子股份有限公司 記憶體儲存裝置及其操作方法
CN108962324B (zh) 2017-05-24 2020-12-15 华邦电子股份有限公司 存储器存储装置
US10121522B1 (en) * 2017-06-22 2018-11-06 Sandisk Technologies Llc Sense circuit with two sense nodes for cascade sensing
JP6677786B1 (ja) * 2018-11-20 2020-04-08 力晶積成電子製造股▲ふん▼有限公司Ｐｏｗｅｒｃｈｉｐ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｍａｎｕｆａｃｔｕｒｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ ページバッファ回路及び不揮発性記憶装置
CN111312318B (zh) * 2018-12-12 2022-03-01 北京兆易创新科技股份有限公司 一种非易失存储器控制方法以及装置
US10796770B2 (en) * 2018-12-17 2020-10-06 Macronix International Co., Ltd. Sensing circuit of memory device and associated sensing method
US10755790B2 (en) * 2019-01-23 2020-08-25 Macronix International Co., Ltd. Boosted voltage driver for bit lines and other circuit nodes
US10885986B2 (en) 2019-02-15 2021-01-05 Macronix International Co., Ltd. Low noise bit line circuits
KR102675390B1 (ko) 2019-12-09 2024-06-17 양쯔 메모리 테크놀로지스 씨오., 엘티디. 플래시 메모리 디바이스들에서의 감지 회로 및 감지 동작 방법
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KR20230049301A (ko) * 2021-10-06 2023-04-13 에스케이하이닉스 주식회사 페이지 버퍼 회로 및 그것을 포함하는 비휘발성 메모리 장치
KR20230072319A (ko) 2021-11-17 2023-05-24 삼성전자주식회사 페이지 버퍼 회로 및 이를 포함하는 메모리 장치
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KR20240062758A (ko) * 2022-11-02 2024-05-09 삼성전자주식회사 페이지 버퍼 회로 및 페이지 버퍼 회로를 포함하는 메모리 장치
KR20240065996A (ko) * 2022-11-07 2024-05-14 삼성전자주식회사 페이지 버퍼 회로를 포함하는 메모리 장치 및 이를 포함하는 ssd
CN117746946B (zh) * 2023-12-29 2025-04-11 张江国家实验室 Rram读取电路以及rram读取电路的读取方法

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Publication number Priority date Publication date Assignee Title
US9129696B2 (en) 2011-09-29 2015-09-08 Samsung Electronics Co., Ltd. Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same

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Publication number Publication date
JP4287235B2 (ja) 2009-07-01
JP2005116102A (ja) 2005-04-28
US20060114733A1 (en) 2006-06-01
US7333371B2 (en) 2008-02-19
US7016230B2 (en) 2006-03-21
KR20050034560A (ko) 2005-04-14
US20050078524A1 (en) 2005-04-14

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