JP2005093942A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2005093942A JP2005093942A JP2003328911A JP2003328911A JP2005093942A JP 2005093942 A JP2005093942 A JP 2005093942A JP 2003328911 A JP2003328911 A JP 2003328911A JP 2003328911 A JP2003328911 A JP 2003328911A JP 2005093942 A JP2005093942 A JP 2005093942A
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Abstract
【解決手段】 シリコン基板4、柱状電極14および放熱用柱状電極15を有する半導体構成体2の下面、側面および上面は、樹脂等からなるベース板1、絶縁層17、上層絶縁膜18およぴオーバーコート膜25によって覆われている。そして、半導体構成体2の放熱用柱状電極15(放熱用再配線13および放熱用下地金属層12を含む)に接続された放熱層23(放熱用下地金属層22を含む)は、オーバーコート膜25の開口部28を介して外部に露出されている。これにより、放熱性を良くすることができる。
【選択図】 図1
Description
請求項2に記載の発明は、請求項1に記載の発明において、前記半導体構成体は、前記外部接続用電極としての柱状電極を有するものであることを特徴とするものである。
請求項3に記載の発明は、請求項2に記載の発明において、前記半導体構成体は放熱用柱状電極を有し、前記放熱層は前記放熱用柱状電極に接続されていることを特徴とするものである。
請求項4に記載の発明は、請求項3に記載の発明において、前記放熱層は前記最上層の上層絶縁膜の上面に設けられ、且つ、その少なくとも一部が前記最上層の上層絶縁膜上に設けられたオーバーコート膜の開口部を介して露出されていることを特徴とするものである。
請求項5に記載の発明は、請求項4に記載の発明において、前記放熱層は前記最上層の上層再配線と同一の材料によって形成されていることを特徴とするものである。
請求項6に記載の発明は、請求項1に記載の発明において、前記放熱層は前記ベース板の下面に設けられていることを特徴とするものである。
請求項7に記載の発明は、請求項6に記載の発明において、前記放熱層は、前記ベース板と前記半導体構成体の半導体基板との間に設けられた中継放熱層に、前記ベース板に設けられた貫通孔を介して接続されていることを特徴とするものである。
請求項8に記載の発明は、請求項7に記載の発明において、前記中継放熱層は前記ベース板上に積層された金属箔からなることを特徴とするものである。
請求項9に記載の発明は、請求項6に記載の発明において、前記放熱層は前記最上層の上層再配線と同一の材料によって形成されていることを特徴とするものである。
請求項10に記載の発明は、請求項1に記載の発明において、前記最上層の上層再配線の接続パッド部上に半田ボールが設けられていることを特徴とするものである。
図1はこの発明の第1実施形態としての半導体装置の断面図を示す。この半導体装置は平面矩形形状のベース板1を備えている。ベース板1は、ガラス繊維、アラミド繊維、液晶繊維等にエポキシ系樹脂、ポリイミド系樹脂、BT(ビスマレイミド・トリアジン)樹脂、PPE(ポリフェニレンエーテル)等を含浸させたもの、あるいは、シリコン、ガラス、セラミックス、樹脂単体等の絶縁材料からなっている。
図16はこの発明の第2実施形態としての半導体装置の断面図を示す。この半導体装置において、図1に示す場合と異なる点は、放熱用下地金属層12、放熱用再配線13、放熱用柱状電極15、放熱用下地金属層22、放熱層23および開口部28を備えておらず、その代わりに、ベース板1の下面中央部に放熱用下地金属層51および放熱層52が設けられ、放熱層52を含む放熱用下地金属層51が、ベース板1と半導体構成体2のシリコン基板4との間に設けられた中継放熱層53に、ベース板1に設けられた貫通孔54を介して接続された点である。
図17はこの発明の第3実施形態としての半導体装置の断面図を示す。この半導体装置では、図1に示す放熱層23等および図16に示す放熱層52等を備えている。したがって、この半導体装置では、放熱性をより一層良くすることができる。
上記第1実施形態では、図1に示すように、上層絶縁膜18上に上層再配線20を1層だけ形成した場合について説明したが、これに限らず、2層以上としてもよく、例えば、図18に示すこの発明の第4実施形態のように、2層としてもよい。すなわち、半導体構成体2および絶縁層17の上面にはビルドアップ材等からなる第1の上層絶縁膜61が設けられている。
なお、上記各実施形態において、半導体構成体2は、外部接続用電極として、再配線11の接続パッド部上に設けられた柱状電極14を有するものとしたが、これに限定されるものではない。例えば、半導体構成体2は、外部接続用電極としての接続パッド部を有する再配線11を有するものであってもよく、また、外部接続用電極としての接続パッド5を有するものであってもよく、さらに、外部接続用電極として、接続パッド5上に設けられた柱状電極を有するものであってもよい。
2 半導体構成体
3 接着層
4 シリコン基板
5 接続パッド
11 再配線
13 放熱用再配線
14 柱状電極
15 放熱用柱状電極
16 封止膜
17 絶縁層
18 上層絶縁膜
20 上層再配線
23 放熱層
25 オーバーコート膜
27 半田ボール
28 開口部
Claims (10)
- ベース板と、前記ベース板上に設けられ、且つ、半導体基板および該半導体基板上に設けられた複数の外部接続用電極を有する半導体構成体と、前記半導体構成体上およびその周囲における前記ベース板上に設けられた絶縁層と、前記絶縁層上に前記半導体構成体の外部接続用電極に接続されて設けられ、且つ、接続パッド部を有する少なくとも1層の上層再配線と、前記上層再配線のうちの最上層の上層再配線の接続パッド部を除く部分を覆う上層絶縁膜と、少なくとも前記上層絶縁膜の上面または前記ベース板の下面の一方に形成され、且つ、前記半導体構成体に接続された放熱層とを備えていることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記半導体構成体は、前記外部接続用電極としての柱状電極を有するものであることを特徴とする半導体装置。
- 請求項2に記載の発明において、前記半導体構成体は放熱用柱状電極を有し、前記放熱層は前記放熱用柱状電極に接続されていることを特徴とする半導体装置。
- 請求項3に記載の発明において、前記放熱層は前記最上層の上層絶縁膜の上面に設けられ、且つ、その少なくとも一部が前記最上層の上層絶縁膜上に設けられたオーバーコート膜の開口部を介して露出されていることを特徴とする半導体装置。
- 請求項4に記載の発明において、前記放熱層は前記最上層の上層再配線と同一の材料によって形成されていることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記放熱層は前記ベース板の下面に設けられていることを特徴とする半導体装置。
- 請求項6に記載の発明において、前記放熱層は、前記ベース板と前記半導体構成体の半導体基板との間に設けられた中継放熱層に、前記ベース板に設けられた貫通孔を介して接続されていることを特徴とする半導体装置。
- 請求項7に記載の発明において、前記中継放熱層は前記ベース板上に積層された金属箔からなることを特徴とする半導体装置。
- 請求項6に記載の発明において、前記放熱層は前記最上層の上層再配線と同一の材料によって形成されていることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記最上層の上層再配線の接続パッド部上に半田ボールが設けられていることを特徴とする半導体装置。
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JP2003328911A JP4012496B2 (ja) | 2003-09-19 | 2003-09-19 | 半導体装置 |
US10/940,232 US7042081B2 (en) | 2003-09-19 | 2004-09-13 | Semiconductor device having heat dissipation layer |
KR1020040074047A KR100637307B1 (ko) | 2003-09-19 | 2004-09-16 | 반도체장치 |
CNB2004101047355A CN1322566C (zh) | 2003-09-19 | 2004-09-16 | 半导体装置 |
TW093128125A TWI248148B (en) | 2003-09-19 | 2004-09-17 | Semiconductor device having heat dissipation layer cross-reference to related applications |
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JP4012496B2 (ja) | 2007-11-21 |
CN1619787A (zh) | 2005-05-25 |
US20050062147A1 (en) | 2005-03-24 |
US7042081B2 (en) | 2006-05-09 |
CN1322566C (zh) | 2007-06-20 |
KR20050028791A (ko) | 2005-03-23 |
KR100637307B1 (ko) | 2006-10-25 |
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