TWI697081B - 半導體封裝基板及其製法與電子封裝件 - Google Patents

半導體封裝基板及其製法與電子封裝件 Download PDF

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TWI697081B
TWI697081B TW108119907A TW108119907A TWI697081B TW I697081 B TWI697081 B TW I697081B TW 108119907 A TW108119907 A TW 108119907A TW 108119907 A TW108119907 A TW 108119907A TW I697081 B TWI697081 B TW I697081B
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opening
pad
package substrate
semiconductor package
metal sheet
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周保宏
余俊賢
許詩濱
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恆勁科技股份有限公司
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Priority to CN202010449653.3A priority patent/CN112071821B/zh
Priority to US16/897,372 priority patent/US11450597B2/en
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Abstract

一種半導體封裝基板及其製法，該製法係包括於線路結構上形成具有第一開孔與第二開孔之金屬片，使該線路結構之第一焊墊外露於該第一開孔，該線路結構之第二焊墊外露於該第二開孔，且於該金屬片上及該第二開孔中之孔壁上形成絕緣層，藉由接地用之第一導電元件設於該第一開孔中時能接觸該金屬片與該第一焊墊，以令在訊號傳遞中所產生的熱能可利用該金屬片及該第一導電元件進行散逸。本發明復提供一種應用該半導體封裝基板之電子封裝件。

Description

半導體封裝基板及其製法與電子封裝件
本發明係有關一種封裝基材，尤指一種具散熱功能之承載基板及電子封裝件。
隨著產業應用的發展，近年來逐漸朝著如人工智慧(AI)晶片、高階晶片或堆疊晶片等大尺寸晶片之封裝規格之趨勢進行研發，如3D或2.5D IC製程，以應用於高密度線路/高傳輸速度/高疊層數/大尺寸設計之高階產品，如人工智慧(AI)晶片、GPU等。
因此，業界遂改用大尺寸板面的覆晶封裝基板，如40*40、70*70或其它更厚且大之結構板型，以承載如人工智慧(AI)晶片、高階晶片或堆疊晶片等大尺寸晶片。
如第1A圖所示，習知電子封裝件1係包括：一封裝基板1a、以及一結合於該封裝基板1a上之半導體晶片19。具體地，該封裝基板1a係包括一核心層10、設於該核心層10上之線路增層部11、及設於該線路增層部11上之防焊層12，且令該防焊層12外露出該線路增層部11最外 側之線路層，俾供作為接點(即I/O)11a,11b，以於上側藉由焊錫凸塊13a接置該半導體晶片19，並於下側(如第1B圖所示之植球側或BGA)藉由焊錫球13b接置電路板(圖未示)。
習知核心層10之製作中，係採用玻纖配合環氧樹酯所組成之基材，如BT(Bismaleimide Triazine)、FR4或FR5等，再其上進行導通孔製程，如機械鑽孔、雷射鑽孔或雙錐狀盲孔等成孔步驟，再於孔中電鍍形成導電部100。再者，線路增層部11之增層方法亦使用ABF種類的材料作為介電層，且該防焊層12之材質選擇係使用綠漆或油墨等材料。
習知封裝基板1a的訊號傳遞路徑由上至下係依序為焊錫凸塊13a、接點11a、線路增層部11、導電部100、線路增層部11、接點11b與焊錫球13b(反向亦同)，而在訊號傳遞中會產生熱能，且產生的熱能只能利用該封裝基板1a的金屬材(如該線路增層部11之銅材線路表面)設計及介電材料進行散逸。
惟，習知封裝基板1a之散熱速度極慢，因而造成熱能積累於該封裝基板1a中，導致整個電子封裝件1容易發燙，進而影響該電子封裝件1之整體效能(如降低傳輸速度、運算速度等)與使用壽命，故該封裝基板1a難以符合散熱需求。
因此，如何克服上述習知技術之問題，實已成為目前業界亟待克服之難題。
鑑於上述習知技術之缺失，本發明提供一種半導體封裝基板，係包括：線路結構，係包含至少一介電層及結合該介電層之線路層，且該線路結構具有相對之置晶側與植球側，其中，該植球側之線路層係具有第一焊墊與第二焊墊；金屬片，係藉由一結合材結合於該線路結構之植球側上，且該金屬片具有第一開孔與第二開孔，其中，該第一開孔係外露出該第一焊墊，該第二開孔係外露出該第二焊墊；以及絕緣層，係設於該金屬片上及該第二開孔中之孔壁上，且該絕緣層未形成於該第一開孔中之孔壁上。
本發明亦提供一種半導體封裝基板之製法，係包括：提供一包含至少一介電層及結合該介電層之線路層的線路結構，且該線路結構具有相對之置晶側與植球側，其中，該植球側之線路層上係形成有第一焊墊與第二焊墊；藉由結合材將一金屬片結合於該線路結構之植球側上，且形成第一開孔與第二開孔於該金屬片上，以令該第一焊墊外露於該第一開孔，且該第二焊墊外露於該第二開孔；形成絕緣層於該線路結構之植球側及該金屬片上；以及移除該第一開孔、第二開孔中及該第一焊墊、第二焊墊上之該絕緣層，以令該第一焊墊外露於該第一開孔，且該第二焊墊外露於該第二開孔，其中，該第二開孔之孔壁上係保留有該絕緣層。
前述之製法中，復包括於該線路結構之置晶側上形成複數導電凸塊，以結合至少一電子元件。
前述之半導體封裝基板及其製法中，復包括形成第一導電元件於該第一開孔中之第一焊墊上，以令該第一導電元件接觸該金屬片。
前述之半導體封裝基板中，復包括形成第二導電元件於該第二開孔中之第二焊墊上，以令該第二導電元件接觸該絕緣層而未接觸該金屬片。
本發明更提供一種電子封裝件，係包括：前述之半導體封裝基板；以及電子元件，係設於該線路結構之置晶側上。
前述之電子封裝件中，復包括封裝層，係設於該半導體封裝基板上，以將該電子元件結合至該半導體封裝基板上。
前述之電子封裝件中，該電子元件係以複數導電凸塊設於該線路結構之置晶側上。
由上可知，本發明之半導體封裝基板及其製法與電子封裝件，主要藉由該金屬片之第一開孔中未形成該絕緣層，使接地用之第一導電元件能接觸該金屬片，以令在訊號傳遞中所產生的熱能除了利用該半導體封裝基板的金屬材及介電材料進行散逸外，更能利用該金屬片及第一導電元件進行散逸，故相較於習知技術，本發明能避免熱能積累於該半導體封裝基板中之情況，以避免整個電子封裝件過熱發燙之問題，因而該半導體封裝基板係符合散熱需求，使其能確保該電子封裝件之整體效能與使用壽命。
1‧‧‧電子封裝件
1a‧‧‧封裝基板
10,20‧‧‧核心層
100,200‧‧‧導電部
11‧‧‧線路增層部
11a,11b‧‧‧接點
12‧‧‧防焊層
13a‧‧‧焊錫凸塊
13b‧‧‧焊錫球
19‧‧‧半導體晶片
2‧‧‧半導體封裝基板
2a‧‧‧線路結構
20a‧‧‧置晶側
20b‧‧‧植球側
21‧‧‧增層部
210‧‧‧介電層
211‧‧‧線路層
212‧‧‧第一焊墊
212’‧‧‧焊墊
213‧‧‧第二焊墊
22‧‧‧防焊層
220‧‧‧開孔
23‧‧‧金屬片
230‧‧‧第一開孔
231‧‧‧第二開孔
24‧‧‧結合材
25‧‧‧絕緣層
26a‧‧‧第一導電元件
26b‧‧‧第二導電元件
27‧‧‧導電凸塊
4‧‧‧電子封裝件
40‧‧‧電子元件
41‧‧‧封裝層
第1A圖係為習知電子封裝件之剖視示意圖。
第1B圖係為第1A圖之下視示意圖。
第2A至2E圖係為本發明之電子封裝件之製法之剖視示意圖。
第2D’圖係為第2D圖之下視示意圖。
以下藉由特定的具體實施例說明本發明之實施方式，熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。
須知，本說明書所附圖式所繪示之結構、比例、大小等，均僅用以配合說明書所揭示之內容，以供熟悉此技藝之人士之瞭解與閱讀，並非用以限定本發明可實施之限定條件，故不具技術上之實質意義，任何結構之修飾、比例關係之改變或大小之調整，在不影響本發明所能產生之功效及所能達成之目的下，均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時，本說明書中所引用之如「上」、「第一」、「第二」及「一」等之用語，亦僅為便於敘述之明瞭，而非用以限定本發明可實施之範圍，其相對關係之改變或調整，在無實質變更技術內容下，當視為本發明可實施之範疇。
第2A至2E圖係為本發明之電子封裝件4及半導體封裝基板2之製法之剖視示意圖。
如第2A圖所示，提供一線路結構2a，該線路結構2a係具有相對之置晶側20a與植球側20b，兩側均可用於置放電子元件(如半導體晶片、被動元件等)，且將置放半導體晶片之外接側稱為置晶側20a。
於本實施例中，該線路結構2a係具有一核心層20，其內形成有複數導電部200。例如，形成該核心層20之材質係採用含玻纖及有機樹脂之基材，如BT(Bismaleimide Triazine)、FR4或FR5等，亦或採用高剛性無玻纖但含有填充材(filler)(如SiO2)之有機基材，再於其上進行導通孔製程，如機械鑽孔或雷射鑽孔等成孔步驟，並於孔中形成該導電部200。或者，於另一實施例中，形成該核心層20之材質係為有機絕緣材，該有機絕緣材可為ABF(Ajinomoto Build-up Film)、有玻纖或無玻纖之預浸材 (Prepreg)、鑄模化合物(Molding Compound)，如環氧模壓樹脂(Epoxy Molding Compound，簡稱EMC)形成之核心基材，較佳者，採用高剛性及低熱膨脹係數(CTE)之EMC，此時該導電部200可由單一導電柱體或由複數相互接觸堆疊之導電柱體所組成。
再者，該線路結構2a復包括設於該核心層20上之增層部21，其具有至少一介電層210及複數結合該介電層210之線路層211，該線路結構2a之置晶側20a之最外層之線路層211係具有複數焊墊212’，且該線路結構2a之植球側20b之最外層之線路層211係具有複數第一焊墊212(如接地接點)及第二焊墊213(如訊號接點)，並於該線路結構2a之置晶側20a上之增層部21上可形成一防焊層22。例如，該介電層210可為液狀環氧樹脂、膜狀ABF、預浸材、模壓樹脂(EMC)或感光型樹脂形成，且形成該防焊層22之材質可為石墨烯、油墨、綠漆、ABF或非感光型介電材(如EMC)或其它適當材質，並無特別限制。應可理解地，有關該線路層211之佈設層數可依需求設計。
又，於該線路結構2a之植球側20b上藉由結合材24結合一金屬片23。例如，該金屬片23係為鋼板、鎳合金(alloy 42)片體等，且該結合材24係為黏著膠材。
另外，於其它實施例中，該核心層20可改為矽基材，以令該增層部21設於該矽基材上，使該線路結構2a成為矽中介板(silicon interposer)形式。或者，於其它實施例中，該線路結構2a可為無核心層(coreless)形式。
如第2B圖所示，於該金屬片23上形成複數第一開孔230與複數第二開孔231，並使該些第一開孔230與第二開孔231延伸穿過該結合材 24，以令部分線路層(如該些第一焊墊212)外露於該些第一開孔230，且令該第二焊墊213外露於該些第二開孔231。
於本實施例中，該金屬片23係為鋼板、鎳合金(alloy 42)片體等，且該結合材24係為黏著膠材。
如第2C圖所示，形成一絕緣層25於該第一焊墊212、該第二焊墊213、該金屬片23上與該複數第一開孔230及第二開孔231內。
於本實施例中，形成該絕緣層25之材質可為如石墨烯之高導熱率之防焊材或如油墨、綠漆、ABF或非感光型介電材(如EMC)等一般防焊材，並無特別限制。
如第2D及2D’圖所示，移除該絕緣層25之部分材質(例如，該第一開孔230中與該第一焊墊212上之全部絕緣層25、該第二開孔231中與第二焊墊213上之部分絕緣層25)，以保留該金屬片23上及該些第二開孔231孔壁上之絕緣層25，使該些第一焊墊212外露於該些第一開孔230，且該些第二焊墊213外露於該些第二開孔231。
於本實施例中，該絕緣層25係披覆於該第二開孔231中之孔壁上，而未披覆於該第一開孔230中之孔壁上，使該第一開孔230中沒有該絕緣層25。
再者，亦可形成複數開孔220於該防焊層22上，以令該些焊墊212’外露於該些開孔220。
因此，本發明之半導體封裝基板2係於該植球側20b上增設金屬片23，使該半導體封裝基板2的散熱效能增加，以減緩該半導體封裝基板2之溫度升高的速度。
如第2E圖所示，該第一開孔230中之第一焊墊212上係結合第一導電元件26a，使該第一導電元件26a接觸該金屬片23與該第一焊墊 212，且該第二開孔231中之第二焊墊213上係結合第二導電元件26b，使該第二導電元件26b接觸該絕緣層25與該第二焊墊213而不會接觸該金屬片23。
於本實施例中，該第一與第二導電元件26a,26b係包含焊錫材料，如焊錫球。
再者，可於該線路結構2a之置晶側20a之外露焊墊212’上設置至少一電子元件40，並形成封裝層41於該線路結構2a之置晶側20a上以固定結合該電子元件40，以形成電子封裝件4。
所述之電子元件40係為主動元件、被動元件或其二者組合，其中，該主動元件係例如半導體晶片，且該被動元件係例如電阻、電容及電感。例如，該電子元件40係為半導體晶片，其藉由複數含焊錫之導電凸塊27以覆晶方式電性連接該些焊墊212’。或者，該電子元件40亦可藉由複數焊線(圖略)以打線方式電性連接該些焊墊212’。然而，有關該電子元件電性連接該承載基板2之方式不限於上述，且該電子元件亦可嵌埋於該增層部21中。
所述之封裝層41可為底膠，其形成於該線路結構2a之置晶側20a與該電子元件40之間以包覆該些導電凸塊27。或者，該封裝層可為壓合製程用之薄膜、模壓製程用之封裝膠體或印刷製程用之膠材等以包覆該電子元件40與該些導電凸塊27，且形成該封裝層41之材質係為聚醯亞胺(PI)、環氧樹脂(epoxy)或模封之封裝材。應可理解地，有關該電子元件40之封裝方式並不限於上述。
因此，本發明之電子封裝件4及其半導體封裝基板2主要藉由該金屬片23之第一開孔230中未形成該絕緣層25，使接地用之第一導電元件26a能接觸該金屬片23，因而能加速該半導體封裝基板2的熱能散逸。具 體地，本發明之電子封裝件4之訊號傳遞路徑由上至下係依序為該電子元件40、導電凸塊27、焊墊212’、增層部21之線路層211、導電部200、增層部21之線路層211、第二焊墊213與第二導電元件26b(反向亦同)，而在訊號傳遞中所產生的熱能除了利用該承載基板2的金屬材(如增層部21之線路層211之銅材表面)及該介電層210進行散逸外，更利用該金屬片23及第一導電元件26a進行散逸。
再者，本發明之承載基板2之絕緣層25若採用高導熱材(如石墨烯)作為防焊層，可更增快該絕緣層25的導熱速率，使該絕緣層25不僅具有防焊功能，且可加速該半導體封裝基板2的熱能散逸效果，使該電子封裝件4之整體效能與使用壽命更穩定。
綜上所述，本發明之半導體封裝基板2及藉此封裝完成之電子封裝件4，係藉由該金屬片23及該第一開孔230內部之結構特徵，使接地用之第一導電元件26a能接觸該金屬片23，以令在訊號傳遞中所產生的熱能可利用該金屬片23及第一導電元件26a進行散逸，因而能加速該承載基板2的熱能散逸，故相較於習知技術，本發明能有效增進該半導體封裝基板2之散熱效益，以避免整個電子封裝件4發燙之問題發生。因此，該半導體封裝基板2可滿足電子封裝件4之散熱需求，進而能有效確保該電子封裝件4之整體效能(如降低傳輸速度、運算速度等)與使用壽命。
上述實施例係用以例示性說明本發明之原理及其功效，而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下，對上述實施例進行修改。因此本發明之權利保護範圍，應如後述之申請專利範圍所列。
2‧‧‧半導體封裝基板
2a‧‧‧線路結構
20a‧‧‧置晶側
20b‧‧‧植球側
212‧‧‧第一焊墊
212’‧‧‧焊墊
213‧‧‧第二焊墊
22‧‧‧防焊層
220‧‧‧開孔
23‧‧‧金屬片
230‧‧‧第一開孔
231‧‧‧第二開孔
24‧‧‧結合材
25‧‧‧絕緣層

Claims (10)

  1. 一種半導體封裝基板，係包括：線路結構，係包含至少一介電層及結合該介電層之線路層，且該線路結構具有相對之置晶側與植球側，其中，該植球側之線路層係具有第一焊墊與第二焊墊；金屬片，係藉由一結合材結合於該線路結構之植球側上，且該金屬片具有第一開孔與第二開孔，其中，該第一開孔係外露出該第一焊墊，該第二開孔係外露出該第二焊墊；以及絕緣層，係設於該金屬片上及該第二開孔之孔壁上，且該絕緣層未形成於該第一開孔之孔壁上。
  2. 如申請專利範圍第1項所述之半導體封裝基板，其中，該第一開孔中之第一焊墊上係結合有第一導電元件，以令該第一導電元件接觸該金屬片。
  3. 如申請專利範圍第1項所述之半導體封裝基板，其中，該第二開孔中之第二焊墊上係結合有第二導電元件，以令該第二導電元件接觸該絕緣層而未接觸該金屬片。
  4. 一種電子封裝件，係包括：如申請專利範圍第1至3項之其中一者所述之半導體封裝基板；以及電子元件，係設於該線路結構之置晶側上。
  5. 如申請專利範圍第4項所述之電子封裝件，復包括封裝層，係設於該半導體封裝基板上，以將該電子元件結合至該半導體封裝基板上。
  6. 如申請專利範圍第4項所述之電子封裝件，其中，該電子元件係以複數導電凸塊設於該線路結構之置晶側上。
  7. 一種半導體封裝基板之製法，係包括：提供一包含至少一介電層及結合該介電層之線路層的線路結構，且該線路結構具有相對之置晶側與植球側，其中，該植球側之線路層上係形成有第一焊墊與第二焊墊；藉由結合材將一金屬片結合於該線路結構之植球側上，且形成第一開孔與第二開孔於該金屬片上，以令該第一焊墊外露於該第一開孔，且該第二焊墊外露於該第二開孔；形成絕緣層於該線路結構之植球側及該金屬片上；以及移除該第一開孔、第二開孔中及該第一焊墊、第二焊墊上之該絕緣層，以令該第一焊墊外露於該第一開孔，且該第二焊墊外露於該第二開孔，其中，該第二開孔之孔壁上係保留有該絕緣層。
  8. 如申請專利範圍第7項所述之半導體封裝基板之製法，復包括形成第一導電元件於該第一開孔中之第一焊墊上，以令該第一導電元件接觸該金屬片。
  9. 如申請專利範圍第7項所述之半導體封裝基板之製法，復包括形成第二導電元件於該第二開孔中之第二焊墊上，以令該第二導電元件接觸該絕緣層而未接觸該金屬片。
  10. 如申請專利範圍第7項所述之半導體封裝基板之製法，復包括於該線路結構之置晶側上形成複數導電凸塊，以結合至少一電子元件。
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