JP4209341B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP4209341B2 JP4209341B2 JP2004040837A JP2004040837A JP4209341B2 JP 4209341 B2 JP4209341 B2 JP 4209341B2 JP 2004040837 A JP2004040837 A JP 2004040837A JP 2004040837 A JP2004040837 A JP 2004040837A JP 4209341 B2 JP4209341 B2 JP 4209341B2
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Description
図1はこの発明の第1実施形態としての半導体装置の断面図を示す。この半導体装置は、ガラス布基材エポキシ樹脂等からなる平面方形状のベース板(ベース部材)1を備えている。ベース板1の上面には銅箔からなる上面配線2が設けられ、下面には銅箔からなる下面配線3が設けられている。この場合、上面配線2はべたパターンからなるグラウンド配線であり、下面配線3はべたパターンからなる電源配線であるが、その逆であってもよい。
図21はこの発明の第2実施形態としての半導体装置の断面図を示す。この半導体装置において、図1に示す場合と異なる点は、第1に、配線板17の上面に方形枠状の絶縁膜71を設け、上層配線35を上層絶縁膜31および絶縁膜71にレーザ加工により同時に形成された開口部33を介して上面側接続端子26に接続した点である。絶縁膜71は、例えば、補強材を含む熱硬化性樹脂からなるプリプレグ材を硬化したものである。
図23はこの発明の第3実施形態としての半導体装置の断面図を示す。この半導体装置において、図1に示す場合と異なる点は、一部の下層配線43の接続パッド部に対応する部分における最下層絶縁膜44に開口部73を設け、最下層絶縁膜44下にコンデンサや抵抗等からなるチップ部品74を下層配線43の接続パッド部に半田ボール75を介して接続させて搭載し、また、最下層絶縁膜44下に他の半導体構成体76を下層配線43の接続パッド部に半田ボール77を介して接続させて搭載した点である。
図24はこの発明の第4実施形態としての半導体装置の断面図を示す。この半導体装置では、例えば、図1に示すものとほぼ同じものからなる第1の半導体ブロック81上に第2、第3の半導体ブロック82、83が搭載されている。この場合、第1の半導体ブロック81の下層配線43下には外部接続用の半田ボール38が設けられている。また、第2の半導体ブロック82の下層配線43下に設けられた半田ボール38は、第1の半導体ブロック81の上層配線35の接続パッド部に接続されている。さらに、第3の半導体ブロック83の下層配線43下に設けられた半田ボール38は、第2の半導体ブロック82の上層配線35の接続パッド部に接続されている。この場合、図示していないが、第3の半導体ブロック83上にチップ部品や他の半導体構成体を搭載するようにしてもよい。
図1では、上層絶縁膜31上に設ける上層配線を1層とし、下層絶縁膜41下に設ける下層配線を1層としているが、これに限らず、上層絶縁膜31上に設ける上層配線を2層以上とし、また、下層絶縁膜41下に設ける下層配線を2層以上としてもよい。また、最上層絶縁膜上にチップ部品や他の半導体構成体等の電子部品を搭載し、最下層絶縁膜下に半田ボールを設けるようにしてもよい。また、絶縁層16内に埋め込む電子部品は、チップ部品29に限らず、ベアチップ等の半導体チップであってもよい。
4 半導体構成体
5 接着層
6 シリコン基板
7 接続パッド
13 配線
14 柱状電極
15 封止膜
16 絶縁層
17 配線板
23 下面側接続端子(接続パッド部)
26 上面側接続端子(接続パッド部)
29 チップ部品
31 上層絶縁膜
35 上層配線
36 最上層絶縁膜
38 半田ボール
41 下層絶縁膜
43 下層配線
44 最下層絶縁膜
45 貫通孔
46 上下導通部
Claims (25)
- ベース部材と、前記ベース部材上に設けられ、且つ、半導体基板および該半導体基板上に設けられた複数の外部接続用電極を有する少なくとも1つの半導体構成体と、前記半導体構成体の周囲における前記ベース部材上に設けられた絶縁層と、前記半導体構成体に対応する部分に開口部を有し、該開口部内に前記半導体構成体を収納して前記絶縁層上に設けられた配線板と、前記配線板に設けられ、且つ、前記絶縁層内に埋め込まれた少なくとも1つの電子部品と、前記半導体構成体および前記配線板上に前記半導体構成体の外部接続用電極および前記配線板の接続パッド部に接続されて設けられ、且つ、接続パッド部を有する少なくとも1層の上層配線とを備えていることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記配線板は両面配線板であることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記電子部品はチップ部品であることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記絶縁層は補強材を含む熱硬化性樹脂からなることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記配線板上に絶縁膜が設けられていることを特徴とする半導体装置。
- 請求項5に記載の発明において、前記絶縁膜は補強材を含む熱硬化性樹脂からなることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記半導体構成体は、前記外部接続用電極としての柱状電極を有するものであることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記最上層の上層配線の接続パッド部を除く部分を覆う最上層絶縁膜を有することを特徴とする半導体装置。
- 請求項8に記載の発明において、前記最上層の上層配線の接続パッド部上に半田ボールが設けられていることを特徴とする半導体装置。
- 請求項1に記載の発明において、前記ベース部材下に少なくとも1層の下層配線が設けられていることを特徴とする半導体装置。
- 請求項10に記載の発明において、前記ベース部材、前記絶縁層および前記配線板に設けられた貫通孔内に上下導通部が前記上層配線の少なくとも一部と前記下層配線の少なくとも一部とを接続するように設けられていることを特徴とする半導体装置。
- 請求項11に記載の発明において、前記最下層の下層配線の接続パッド部を除く部分を覆う最下層絶縁膜を有することを特徴とする半導体装置。
- 請求項12に記載の発明において、前記最下層絶縁膜下に電子部品が前記最下層の下層配線の接続パッド部に接続されて設けられていることを特徴とする半導体装置。
- 請求項12に記載の発明において、前記最下層の下層配線の接続パッド部下に半田ボールが設けられていることを特徴とする半導体装置。
- 請求項14に記載の発明において、前記最上層絶縁膜上に電子部品が前記最上層の上層配線の接続パッド部に接続されて設けられていることを特徴とする半導体装置。
- ベース部材上に、各々が半導体基板および該半導体基板上に設けられた複数の外部接続用電極を有する複数の半導体構成体を相互に離間させて配置する工程と、
前記半導体構成体の周囲における前記ベース部材上に絶縁層を形成し、且つ、前記各半導体構成体に対応する部分に開口部を有する配線板をその各開口部内に前記各半導体構成体を収納して前記絶縁層上に配置するとともに、前記配線板に設けられた電子部品を前記絶縁層内に埋め込む工程と、
前記半導体構成体および前記配線板上に少なくとも1層の上層配線を前記半導体構成体の前記外部接続用電極および前記配線板の接続パッド部に接続させて形成する工程と、
前記半導体構成体間における前記ベース部材、前記絶縁層および前記配線板を切断して、前記半導体構成体が少なくとも1つ含まれ、且つ、前記電子部品が少なくとも1つ含まれる半導体装置を複数個得る工程と、
を有することを特徴とする半導体装置の製造方法。 - 請求項16に記載の発明において、前記配線板は両面配線板であることを特徴とする半導体装置の製造方法。
- 請求項16に記載の発明において、前記電子部品はチップ部品であることを特徴とする半導体装置の製造方法。
- 請求項16に記載の発明において、前記絶縁層を補強材を含む熱硬化性樹脂によって形成することを特徴とする半導体装置の製造方法。
- 請求項19に記載の発明において、前記絶縁層を形成するための前記補強材を含む熱硬化性樹脂は1層または複数層であり、且つ、そのうちの少なくとも最上層の補強材を含む熱硬化性樹脂に前記電子部品を収納するための開口部が形成されていることを特徴とする半導体装置の製造方法。
- 請求項16に記載の発明において、前記配線板を前記絶縁層上に配置するとともに、前記配線板に設けられた前記電子部品を前記絶縁層内に埋め込む工程は、前記配線板上に、前記各半導体構成体に対応する部分に開口部を有する絶縁膜をその各開口部内に前記各半導体構成体を収納して形成する工程を含むことを特徴とする半導体装置の製造方法。
- 請求項21に記載の発明において、前記絶縁膜を補強材を含む熱硬化性樹脂によって形成することを特徴とする半導体装置の製造方法。
- 請求項16に記載の発明において、前記ベース部材下に少なくとも1層の下層配線を形成する工程を有することを特徴とする半導体装置の製造方法。
- 請求項23に記載の発明において、前記ベース部材、前記絶縁層および前記配線板に形成された貫通孔内に前記上層配線の少なくとも一部と前記下層配線の少なくとも一部とを接続する上下導通部を形成する工程を有することを特徴とする半導体装置の製造方法。
- 請求項16に記載の発明において、前記半導体構成体は、前記外部接続用電極としての柱状電極を有するものであることを特徴とする半導体装置の製造方法。
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