JP2003086510A5 - - Google Patents
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- Publication number
- JP2003086510A5 JP2003086510A5 JP2002193023A JP2002193023A JP2003086510A5 JP 2003086510 A5 JP2003086510 A5 JP 2003086510A5 JP 2002193023 A JP2002193023 A JP 2002193023A JP 2002193023 A JP2002193023 A JP 2002193023A JP 2003086510 A5 JP2003086510 A5 JP 2003086510A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- film
- laser beam
- semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 32
- 239000013078 crystal Substances 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 238000000034 method Methods 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 238000002425 crystallisation Methods 0.000 claims 4
- 230000008025 crystallization Effects 0.000 claims 4
- 229910052732 germanium Inorganic materials 0.000 claims 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 239000011261 inert gas Substances 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- 238000005247 gettering Methods 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002193023A JP4209638B2 (ja) | 2001-07-02 | 2002-07-02 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001200319 | 2001-07-02 | ||
| JP2001-200319 | 2001-07-02 | ||
| JP2002193023A JP4209638B2 (ja) | 2001-07-02 | 2002-07-02 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003086510A JP2003086510A (ja) | 2003-03-20 |
| JP2003086510A5 true JP2003086510A5 (enExample) | 2005-10-20 |
| JP4209638B2 JP4209638B2 (ja) | 2009-01-14 |
Family
ID=19037459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002193023A Expired - Fee Related JP4209638B2 (ja) | 2001-07-02 | 2002-07-02 | 半導体装置の作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20030032221A1 (enExample) |
| JP (1) | JP4209638B2 (enExample) |
| KR (1) | KR100889508B1 (enExample) |
| CN (2) | CN100435280C (enExample) |
| TW (1) | TW550648B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855584B2 (en) * | 2001-03-29 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP4854866B2 (ja) * | 2001-04-27 | 2012-01-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4869509B2 (ja) * | 2001-07-17 | 2012-02-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7540935B2 (en) * | 2003-03-14 | 2009-06-02 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
| KR100672933B1 (ko) * | 2003-06-04 | 2007-01-23 | 삼성전자주식회사 | 세정 용액 및 이를 이용한 반도체 소자의 세정 방법 |
| JP2005317949A (ja) * | 2004-03-31 | 2005-11-10 | Nec Corp | コンタクトホール形成方法及び製造装置 |
| US7365410B2 (en) * | 2004-10-29 | 2008-04-29 | Freescale, Semiconductor, Inc. | Semiconductor structure having a metallic buffer layer and method for forming |
| JP4822737B2 (ja) * | 2005-04-22 | 2011-11-24 | ミヤチテクノス株式会社 | レーザ溶接方法及びレーザ溶接装置 |
| US8034724B2 (en) | 2006-07-21 | 2011-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR100787464B1 (ko) | 2007-01-08 | 2007-12-26 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 및 그 제조방법 |
| KR101886862B1 (ko) * | 2011-09-29 | 2018-08-09 | 엘지디스플레이 주식회사 | 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법 |
| KR101888089B1 (ko) * | 2011-09-29 | 2018-08-16 | 엘지디스플레이 주식회사 | 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법 |
| US10141413B2 (en) | 2013-03-13 | 2018-11-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer strength by control of uniformity of edge bulk micro defects |
| US9064823B2 (en) * | 2013-03-13 | 2015-06-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for qualifying a semiconductor wafer for subsequent processing |
| CN108231856A (zh) | 2018-01-12 | 2018-06-29 | 京东方科技集团股份有限公司 | 像素界定层、显示面板及显示装置 |
| CN113130305B (zh) * | 2021-03-03 | 2023-03-24 | 哈尔滨工业大学 | 一种碳化硅单晶表面微结构的构建方法 |
Family Cites Families (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100355938B1 (ko) * | 1993-05-26 | 2002-12-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치제작방법 |
| JPH06349735A (ja) | 1993-06-12 | 1994-12-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| TW264575B (enExample) * | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| JP3431033B2 (ja) * | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| US5923962A (en) * | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| JP3464285B2 (ja) | 1994-08-26 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3464287B2 (ja) * | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3727387B2 (ja) * | 1994-09-29 | 2005-12-14 | 株式会社半導体エネルギー研究所 | 結晶性珪素膜の作製方法、デバイス、液晶表示装置、薄膜トランジスタおよび電子機器 |
| US5789284A (en) | 1994-09-29 | 1998-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
| JP3942651B2 (ja) * | 1994-10-07 | 2007-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3535241B2 (ja) * | 1994-11-18 | 2004-06-07 | 株式会社半導体エネルギー研究所 | 半導体デバイス及びその作製方法 |
| JP3471966B2 (ja) * | 1995-03-16 | 2003-12-02 | 株式会社半導体エネルギー研究所 | 薄膜半導体装置の作製方法 |
| US5828084A (en) | 1995-03-27 | 1998-10-27 | Sony Corporation | High performance poly-SiGe thin film transistor |
| KR100440083B1 (ko) | 1996-01-23 | 2004-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체박막제작방법 |
| US6331457B1 (en) | 1997-01-24 | 2001-12-18 | Semiconductor Energy Laboratory., Ltd. Co. | Method for manufacturing a semiconductor thin film |
| US5943560A (en) * | 1996-04-19 | 1999-08-24 | National Science Council | Method to fabricate the thin film transistor |
| JPH1174536A (ja) * | 1997-01-09 | 1999-03-16 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| US6764928B1 (en) * | 1997-02-20 | 2004-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an El display device |
| JP3983334B2 (ja) * | 1997-02-20 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4242461B2 (ja) * | 1997-02-24 | 2009-03-25 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW379360B (en) | 1997-03-03 | 2000-01-11 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| JP3262752B2 (ja) * | 1997-03-28 | 2002-03-04 | 松下電器産業株式会社 | 半導体装置の製造方法 |
| US5828587A (en) * | 1997-05-06 | 1998-10-27 | Bedol; Mark A. | Attachment apparatus for checkbook cover and method of use thereof |
| JP4566294B2 (ja) | 1997-06-06 | 2010-10-20 | 株式会社半導体エネルギー研究所 | 連続粒界結晶シリコン膜、半導体装置 |
| FR2764732B1 (fr) | 1997-06-13 | 1999-09-17 | France Telecom | Procede de depot d'une couche d'un materiau polycristallin sur un substrat a base de silicium |
| JP3830623B2 (ja) | 1997-07-14 | 2006-10-04 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法 |
| JP4601731B2 (ja) * | 1997-08-26 | 2010-12-22 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置を有する電子機器及び半導体装置の作製方法 |
| US6121660A (en) | 1997-09-23 | 2000-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Channel etch type bottom gate semiconductor device |
| US6680223B1 (en) | 1997-09-23 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6444390B1 (en) | 1998-02-18 | 2002-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Process for producing semiconductor thin film devices using group 14 element and high temperature oxidizing treatment to achieve a crystalline silicon film |
| JP3980159B2 (ja) * | 1998-03-05 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6482684B1 (en) | 1998-03-27 | 2002-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a TFT with Ge seeded amorphous Si layer |
| US6388270B1 (en) * | 1998-03-27 | 2002-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for producing same |
| US7153729B1 (en) | 1998-07-15 | 2006-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same |
| JP4493749B2 (ja) * | 1998-07-15 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4376331B2 (ja) | 1998-08-07 | 2009-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6559036B1 (en) * | 1998-08-07 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP2000114173A (ja) * | 1998-08-07 | 2000-04-21 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP2000277742A (ja) * | 1999-03-25 | 2000-10-06 | Seiko Epson Corp | 薄膜トランジスタ |
| JP2000277438A (ja) * | 1999-03-25 | 2000-10-06 | Sony Corp | 多結晶半導体膜の形成方法 |
| JP2000340503A (ja) * | 1999-05-26 | 2000-12-08 | Seiko Epson Corp | 半導体膜の製造方法、薄膜トランジスタの製造方法、アクティブマトリクス基板 |
| JP2001023899A (ja) * | 1999-07-13 | 2001-01-26 | Hitachi Ltd | 半導体薄膜とその半導体膜を用いた液晶表示装置及びその製造方法 |
| JP4101409B2 (ja) * | 1999-08-19 | 2008-06-18 | シャープ株式会社 | 半導体装置の製造方法 |
| JP4076720B2 (ja) * | 1999-12-28 | 2008-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW473800B (en) | 1999-12-28 | 2002-01-21 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
| TWI263336B (en) | 2000-06-12 | 2006-10-01 | Semiconductor Energy Lab | Thin film transistors and semiconductor device |
| JP2002083974A (ja) | 2000-06-19 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US6828587B2 (en) | 2000-06-19 | 2004-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US7503975B2 (en) * | 2000-06-27 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method therefor |
| US6703265B2 (en) * | 2000-08-02 | 2004-03-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6855584B2 (en) | 2001-03-29 | 2005-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP4854866B2 (ja) | 2001-04-27 | 2012-01-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4267266B2 (ja) * | 2001-07-10 | 2009-05-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2002
- 2002-07-01 TW TW091114551A patent/TW550648B/zh not_active IP Right Cessation
- 2002-07-02 CN CNB2006101516925A patent/CN100435280C/zh not_active Expired - Fee Related
- 2002-07-02 CN CNB02131506XA patent/CN1282989C/zh not_active Expired - Fee Related
- 2002-07-02 JP JP2002193023A patent/JP4209638B2/ja not_active Expired - Fee Related
- 2002-07-02 KR KR1020020037876A patent/KR100889508B1/ko not_active Expired - Fee Related
- 2002-07-02 US US10/187,414 patent/US20030032221A1/en not_active Abandoned
-
2007
- 2007-04-19 US US11/785,633 patent/US7998845B2/en not_active Expired - Fee Related
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