KR100889508B1 - 반도체장치 및 그 제작방법 - Google Patents

반도체장치 및 그 제작방법 Download PDF

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Publication number
KR100889508B1
KR100889508B1 KR1020020037876A KR20020037876A KR100889508B1 KR 100889508 B1 KR100889508 B1 KR 100889508B1 KR 1020020037876 A KR1020020037876 A KR 1020020037876A KR 20020037876 A KR20020037876 A KR 20020037876A KR 100889508 B1 KR100889508 B1 KR 100889508B1
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film
semiconductor film
laser light
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semiconductor
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Korean (ko)
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KR20030004111A (ko
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카사하라켄지
야마자키순페이
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Compressor (AREA)
KR1020020037876A 2001-07-02 2002-07-02 반도체장치 및 그 제작방법 Expired - Fee Related KR100889508B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00200319 2001-07-02
JP2001200319 2001-07-02

Publications (2)

Publication Number Publication Date
KR20030004111A KR20030004111A (ko) 2003-01-14
KR100889508B1 true KR100889508B1 (ko) 2009-03-19

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Family Applications (1)

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KR1020020037876A Expired - Fee Related KR100889508B1 (ko) 2001-07-02 2002-07-02 반도체장치 및 그 제작방법

Country Status (5)

Country Link
US (2) US20030032221A1 (enExample)
JP (1) JP4209638B2 (enExample)
KR (1) KR100889508B1 (enExample)
CN (2) CN100435280C (enExample)
TW (1) TW550648B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130035116A (ko) * 2011-09-29 2013-04-08 엘지디스플레이 주식회사 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법
KR20130035117A (ko) * 2011-09-29 2013-04-08 엘지디스플레이 주식회사 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법

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US6855584B2 (en) * 2001-03-29 2005-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4854866B2 (ja) * 2001-04-27 2012-01-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4869509B2 (ja) * 2001-07-17 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7540935B2 (en) * 2003-03-14 2009-06-02 Lam Research Corporation Plasma oxidation and removal of oxidized material
KR100672933B1 (ko) * 2003-06-04 2007-01-23 삼성전자주식회사 세정 용액 및 이를 이용한 반도체 소자의 세정 방법
JP2005317949A (ja) * 2004-03-31 2005-11-10 Nec Corp コンタクトホール形成方法及び製造装置
US7365410B2 (en) * 2004-10-29 2008-04-29 Freescale, Semiconductor, Inc. Semiconductor structure having a metallic buffer layer and method for forming
JP4822737B2 (ja) * 2005-04-22 2011-11-24 ミヤチテクノス株式会社 レーザ溶接方法及びレーザ溶接装置
US8034724B2 (en) 2006-07-21 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100787464B1 (ko) 2007-01-08 2007-12-26 삼성에스디아이 주식회사 박막 트랜지스터, 및 그 제조방법
US10141413B2 (en) 2013-03-13 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer strength by control of uniformity of edge bulk micro defects
US9064823B2 (en) * 2013-03-13 2015-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for qualifying a semiconductor wafer for subsequent processing
CN108231856A (zh) 2018-01-12 2018-06-29 京东方科技集团股份有限公司 像素界定层、显示面板及显示装置
CN113130305B (zh) * 2021-03-03 2023-03-24 哈尔滨工业大学 一种碳化硅单晶表面微结构的构建方法

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KR960036149A (ko) * 1995-03-27 1996-10-28 이데이 노부유키 고성능 폴리-실리콘게르마늄 박막 트랜지스터 및 그 제조방법
US5943560A (en) * 1996-04-19 1999-08-24 National Science Council Method to fabricate the thin film transistor
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130035116A (ko) * 2011-09-29 2013-04-08 엘지디스플레이 주식회사 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법
KR20130035117A (ko) * 2011-09-29 2013-04-08 엘지디스플레이 주식회사 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법
KR101886862B1 (ko) * 2011-09-29 2018-08-09 엘지디스플레이 주식회사 결정화방법 및 이를 이용한 박막 트랜지스터의 제조방법

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US20030032221A1 (en) 2003-02-13
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CN1400628A (zh) 2003-03-05
US7998845B2 (en) 2011-08-16
JP4209638B2 (ja) 2009-01-14
CN100435280C (zh) 2008-11-19
TW550648B (en) 2003-09-01
US20070196960A1 (en) 2007-08-23
CN1913106A (zh) 2007-02-14
CN1282989C (zh) 2006-11-01

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