JP2003303770A5 - - Google Patents
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- Publication number
- JP2003303770A5 JP2003303770A5 JP2002109305A JP2002109305A JP2003303770A5 JP 2003303770 A5 JP2003303770 A5 JP 2003303770A5 JP 2002109305 A JP2002109305 A JP 2002109305A JP 2002109305 A JP2002109305 A JP 2002109305A JP 2003303770 A5 JP2003303770 A5 JP 2003303770A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- barrier layer
- semiconductor device
- manufacturing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 56
- 230000004888 barrier function Effects 0.000 claims 20
- 238000002425 crystallisation Methods 0.000 claims 14
- 230000008025 crystallization Effects 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 14
- 238000000034 method Methods 0.000 claims 14
- 238000010438 heat treatment Methods 0.000 claims 10
- 238000005247 gettering Methods 0.000 claims 9
- 230000001737 promoting effect Effects 0.000 claims 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 4
- 239000012212 insulator Substances 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 230000000737 periodic effect Effects 0.000 claims 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 229910052745 lead Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910052762 osmium Inorganic materials 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052718 tin Inorganic materials 0.000 claims 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 238000004458 analytical method Methods 0.000 claims 1
- 239000007864 aqueous solution Substances 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002109305A JP2003303770A (ja) | 2002-04-11 | 2002-04-11 | 半導体装置およびその作製方法 |
| US10/400,418 US6867077B2 (en) | 2002-04-11 | 2003-03-28 | Semiconductor device and method of manufacturing the same |
| TW092107278A TWI270943B (en) | 2002-04-11 | 2003-03-31 | Semiconductor device and method of manufacturing the same |
| CNA2006101373902A CN1941419A (zh) | 2002-04-11 | 2003-04-11 | 半导体器件及其制造方法 |
| KR1020030023026A KR100998159B1 (ko) | 2002-04-11 | 2003-04-11 | 반도체 장치 및 그 제조 방법 |
| CNB031105874A CN100342484C (zh) | 2002-04-11 | 2003-04-11 | 半导体器件及其制造方法 |
| US11/048,893 US20050151132A1 (en) | 2002-04-11 | 2005-02-03 | Semiconductor device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002109305A JP2003303770A (ja) | 2002-04-11 | 2002-04-11 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003303770A JP2003303770A (ja) | 2003-10-24 |
| JP2003303770A5 true JP2003303770A5 (enExample) | 2005-09-15 |
Family
ID=28786570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002109305A Withdrawn JP2003303770A (ja) | 2002-04-11 | 2002-04-11 | 半導体装置およびその作製方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6867077B2 (enExample) |
| JP (1) | JP2003303770A (enExample) |
| KR (1) | KR100998159B1 (enExample) |
| CN (2) | CN100342484C (enExample) |
| TW (1) | TWI270943B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6306694B1 (en) * | 1999-03-12 | 2001-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Process of fabricating a semiconductor device |
| US6512504B1 (en) | 1999-04-27 | 2003-01-28 | Semiconductor Energy Laborayory Co., Ltd. | Electronic device and electronic apparatus |
| US7503975B2 (en) * | 2000-06-27 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method therefor |
| US7507617B2 (en) * | 2003-12-25 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR100640213B1 (ko) * | 2003-12-29 | 2006-10-31 | 엘지.필립스 엘시디 주식회사 | 폴리실리콘 액정표시소자 제조방법 |
| JP4063266B2 (ja) * | 2004-09-30 | 2008-03-19 | セイコーエプソン株式会社 | 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器 |
| US7527976B2 (en) * | 2005-02-18 | 2009-05-05 | Freescale Semiconductor, Inc. | Processes for testing a region for an analyte and a process for forming an electronic device |
| CN102443769B (zh) * | 2010-10-11 | 2013-11-27 | 北大方正集团有限公司 | Pvd假片的回收方法 |
| WO2020074999A1 (ja) | 2018-10-12 | 2020-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP7341052B2 (ja) * | 2019-12-26 | 2023-09-08 | 東京エレクトロン株式会社 | 膜形成方法及び膜形成装置 |
| CN115498071B (zh) * | 2022-09-20 | 2024-05-14 | 通威太阳能（成都）有限公司 | 电池的制备方法、电池和电子产品 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5612250A (en) * | 1993-12-01 | 1997-03-18 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device using a catalyst |
| JP3562590B2 (ja) | 1993-12-01 | 2004-09-08 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
| TW279275B (enExample) * | 1993-12-27 | 1996-06-21 | Sharp Kk | |
| TW273639B (en) * | 1994-07-01 | 1996-04-01 | Handotai Energy Kenkyusho Kk | Method for producing semiconductor device |
| JPH08139021A (ja) * | 1994-09-15 | 1996-05-31 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP3645378B2 (ja) * | 1996-01-19 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR100440083B1 (ko) * | 1996-01-23 | 2004-10-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체박막제작방법 |
| JPH1022289A (ja) | 1996-07-08 | 1998-01-23 | Toshiba Corp | 半導体装置およびその製造方法 |
| US5981974A (en) * | 1996-09-30 | 1999-11-09 | Sharp Kabushiki Kaisha | Semiconductor device and method for fabricating the same |
| US6743700B2 (en) * | 2001-06-01 | 2004-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor device and method of their production |
-
2002
- 2002-04-11 JP JP2002109305A patent/JP2003303770A/ja not_active Withdrawn
-
2003
- 2003-03-28 US US10/400,418 patent/US6867077B2/en not_active Expired - Fee Related
- 2003-03-31 TW TW092107278A patent/TWI270943B/zh not_active IP Right Cessation
- 2003-04-11 KR KR1020030023026A patent/KR100998159B1/ko not_active Expired - Fee Related
- 2003-04-11 CN CNB031105874A patent/CN100342484C/zh not_active Expired - Fee Related
- 2003-04-11 CN CNA2006101373902A patent/CN1941419A/zh active Pending
-
2005
- 2005-02-03 US US11/048,893 patent/US20050151132A1/en not_active Abandoned
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