JP2003303770A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法

Info

Publication number
JP2003303770A
JP2003303770A JP2002109305A JP2002109305A JP2003303770A JP 2003303770 A JP2003303770 A JP 2003303770A JP 2002109305 A JP2002109305 A JP 2002109305A JP 2002109305 A JP2002109305 A JP 2002109305A JP 2003303770 A JP2003303770 A JP 2003303770A
Authority
JP
Japan
Prior art keywords
film
barrier layer
semiconductor
semiconductor film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2002109305A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003303770A5 (enExample
Inventor
Misako Nakazawa
美佐子 仲沢
Mitsuhiro Ichijo
充弘 一條
Toshiji Hamaya
敏次 浜谷
Hideto Onuma
英人 大沼
Naoki Makita
直樹 牧田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, Sharp Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002109305A priority Critical patent/JP2003303770A/ja
Priority to US10/400,418 priority patent/US6867077B2/en
Priority to TW092107278A priority patent/TWI270943B/zh
Priority to CNA2006101373902A priority patent/CN1941419A/zh
Priority to KR1020030023026A priority patent/KR100998159B1/ko
Priority to CNB031105874A priority patent/CN100342484C/zh
Publication of JP2003303770A publication Critical patent/JP2003303770A/ja
Priority to US11/048,893 priority patent/US20050151132A1/en
Publication of JP2003303770A5 publication Critical patent/JP2003303770A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2002109305A 2002-04-11 2002-04-11 半導体装置およびその作製方法 Withdrawn JP2003303770A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002109305A JP2003303770A (ja) 2002-04-11 2002-04-11 半導体装置およびその作製方法
US10/400,418 US6867077B2 (en) 2002-04-11 2003-03-28 Semiconductor device and method of manufacturing the same
TW092107278A TWI270943B (en) 2002-04-11 2003-03-31 Semiconductor device and method of manufacturing the same
CNA2006101373902A CN1941419A (zh) 2002-04-11 2003-04-11 半导体器件及其制造方法
KR1020030023026A KR100998159B1 (ko) 2002-04-11 2003-04-11 반도체 장치 및 그 제조 방법
CNB031105874A CN100342484C (zh) 2002-04-11 2003-04-11 半导体器件及其制造方法
US11/048,893 US20050151132A1 (en) 2002-04-11 2005-02-03 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002109305A JP2003303770A (ja) 2002-04-11 2002-04-11 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JP2003303770A true JP2003303770A (ja) 2003-10-24
JP2003303770A5 JP2003303770A5 (enExample) 2005-09-15

Family

ID=28786570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002109305A Withdrawn JP2003303770A (ja) 2002-04-11 2002-04-11 半導体装置およびその作製方法

Country Status (5)

Country Link
US (2) US6867077B2 (enExample)
JP (1) JP2003303770A (enExample)
KR (1) KR100998159B1 (enExample)
CN (2) CN100342484C (enExample)
TW (1) TWI270943B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113053725A (zh) * 2019-12-26 2021-06-29 东京毅力科创株式会社 膜形成方法和膜形成装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306694B1 (en) * 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100640213B1 (ko) * 2003-12-29 2006-10-31 엘지.필립스 엘시디 주식회사 폴리실리콘 액정표시소자 제조방법
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
US7527976B2 (en) * 2005-02-18 2009-05-05 Freescale Semiconductor, Inc. Processes for testing a region for an analyte and a process for forming an electronic device
CN102443769B (zh) * 2010-10-11 2013-11-27 北大方正集团有限公司 Pvd假片的回收方法
WO2020074999A1 (ja) 2018-10-12 2020-04-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN115498071B (zh) * 2022-09-20 2024-05-14 通威太阳能（成都）有限公司 电池的制备方法、电池和电子产品

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612250A (en) * 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
JP3562590B2 (ja) 1993-12-01 2004-09-08 株式会社半導体エネルギー研究所 半導体装置作製方法
TW279275B (enExample) * 1993-12-27 1996-06-21 Sharp Kk
TW273639B (en) * 1994-07-01 1996-04-01 Handotai Energy Kenkyusho Kk Method for producing semiconductor device
JPH08139021A (ja) * 1994-09-15 1996-05-31 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3645378B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100440083B1 (ko) * 1996-01-23 2004-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체박막제작방법
JPH1022289A (ja) 1996-07-08 1998-01-23 Toshiba Corp 半導体装置およびその製造方法
US5981974A (en) * 1996-09-30 1999-11-09 Sharp Kabushiki Kaisha Semiconductor device and method for fabricating the same
US6743700B2 (en) * 2001-06-01 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device and method of their production

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113053725A (zh) * 2019-12-26 2021-06-29 东京毅力科创株式会社 膜形成方法和膜形成装置
KR20210083191A (ko) * 2019-12-26 2021-07-06 도쿄엘렉트론가부시키가이샤 막 형성 방법 및 막 형성 장치
JP2021106217A (ja) * 2019-12-26 2021-07-26 東京エレクトロン株式会社 膜形成方法及び膜形成装置
JP7341052B2 (ja) 2019-12-26 2023-09-08 東京エレクトロン株式会社 膜形成方法及び膜形成装置
KR102732069B1 (ko) * 2019-12-26 2024-11-20 도쿄엘렉트론가부시키가이샤 막 형성 방법 및 막 형성 장치

Also Published As

Publication number Publication date
KR20030081174A (ko) 2003-10-17
KR100998159B1 (ko) 2010-12-06
CN1450594A (zh) 2003-10-22
CN100342484C (zh) 2007-10-10
TW200308024A (en) 2003-12-16
CN1941419A (zh) 2007-04-04
US20050151132A1 (en) 2005-07-14
US6867077B2 (en) 2005-03-15
TWI270943B (en) 2007-01-11
US20030193052A1 (en) 2003-10-16

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