TWI270943B - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same Download PDF

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Publication number
TWI270943B
TWI270943B TW092107278A TW92107278A TWI270943B TW I270943 B TWI270943 B TW I270943B TW 092107278 A TW092107278 A TW 092107278A TW 92107278 A TW92107278 A TW 92107278A TW I270943 B TWI270943 B TW I270943B
Authority
TW
Taiwan
Prior art keywords
film
semiconductor device
layer
barrier layer
manufacturing
Prior art date
Application number
TW092107278A
Other languages
English (en)
Chinese (zh)
Other versions
TW200308024A (en
Inventor
Misako Nakazawa
Mitsuhiro Ichijo
Toshiji Hamatani
Hideto Ohnuma
Naoki Makita
Original Assignee
Semiconductor Energy Lab
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab, Sharp Kk filed Critical Semiconductor Energy Lab
Publication of TW200308024A publication Critical patent/TW200308024A/zh
Application granted granted Critical
Publication of TWI270943B publication Critical patent/TWI270943B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW092107278A 2002-04-11 2003-03-31 Semiconductor device and method of manufacturing the same TWI270943B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002109305A JP2003303770A (ja) 2002-04-11 2002-04-11 半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
TW200308024A TW200308024A (en) 2003-12-16
TWI270943B true TWI270943B (en) 2007-01-11

Family

ID=28786570

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092107278A TWI270943B (en) 2002-04-11 2003-03-31 Semiconductor device and method of manufacturing the same

Country Status (5)

Country Link
US (2) US6867077B2 (enExample)
JP (1) JP2003303770A (enExample)
KR (1) KR100998159B1 (enExample)
CN (2) CN100342484C (enExample)
TW (1) TWI270943B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306694B1 (en) * 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100640213B1 (ko) * 2003-12-29 2006-10-31 엘지.필립스 엘시디 주식회사 폴리실리콘 액정표시소자 제조방법
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
US7527976B2 (en) * 2005-02-18 2009-05-05 Freescale Semiconductor, Inc. Processes for testing a region for an analyte and a process for forming an electronic device
CN102443769B (zh) * 2010-10-11 2013-11-27 北大方正集团有限公司 Pvd假片的回收方法
WO2020074999A1 (ja) 2018-10-12 2020-04-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7341052B2 (ja) * 2019-12-26 2023-09-08 東京エレクトロン株式会社 膜形成方法及び膜形成装置
CN115498071B (zh) * 2022-09-20 2024-05-14 通威太阳能（成都）有限公司 电池的制备方法、电池和电子产品

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612250A (en) * 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
JP3562590B2 (ja) 1993-12-01 2004-09-08 株式会社半導体エネルギー研究所 半導体装置作製方法
TW279275B (enExample) * 1993-12-27 1996-06-21 Sharp Kk
TW273639B (en) * 1994-07-01 1996-04-01 Handotai Energy Kenkyusho Kk Method for producing semiconductor device
JPH08139021A (ja) * 1994-09-15 1996-05-31 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3645378B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100440083B1 (ko) * 1996-01-23 2004-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체박막제작방법
JPH1022289A (ja) 1996-07-08 1998-01-23 Toshiba Corp 半導体装置およびその製造方法
US5981974A (en) * 1996-09-30 1999-11-09 Sharp Kabushiki Kaisha Semiconductor device and method for fabricating the same
US6743700B2 (en) * 2001-06-01 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device and method of their production

Also Published As

Publication number Publication date
KR20030081174A (ko) 2003-10-17
KR100998159B1 (ko) 2010-12-06
JP2003303770A (ja) 2003-10-24
CN1450594A (zh) 2003-10-22
CN100342484C (zh) 2007-10-10
TW200308024A (en) 2003-12-16
CN1941419A (zh) 2007-04-04
US20050151132A1 (en) 2005-07-14
US6867077B2 (en) 2005-03-15
US20030193052A1 (en) 2003-10-16

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Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees