CN100342484C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN100342484C
CN100342484C CNB031105874A CN03110587A CN100342484C CN 100342484 C CN100342484 C CN 100342484C CN B031105874 A CNB031105874 A CN B031105874A CN 03110587 A CN03110587 A CN 03110587A CN 100342484 C CN100342484 C CN 100342484C
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CN
China
Prior art keywords
film
layer
manufacturing
semiconductor device
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB031105874A
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English (en)
Chinese (zh)
Other versions
CN1450594A (zh
Inventor
仲泽美佐子
一条充弘
浜谷敏次
大沼英人
牧田直树
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Sharp Corp
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Publication of CN1450594A publication Critical patent/CN1450594A/zh
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Publication of CN100342484C publication Critical patent/CN100342484C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CNB031105874A 2002-04-11 2003-04-11 半导体器件及其制造方法 Expired - Fee Related CN100342484C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP109305/02 2002-04-11
JP2002109305A JP2003303770A (ja) 2002-04-11 2002-04-11 半導体装置およびその作製方法
JP109305/2002 2002-04-11

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101373902A Division CN1941419A (zh) 2002-04-11 2003-04-11 半导体器件及其制造方法

Publications (2)

Publication Number Publication Date
CN1450594A CN1450594A (zh) 2003-10-22
CN100342484C true CN100342484C (zh) 2007-10-10

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CNB031105874A Expired - Fee Related CN100342484C (zh) 2002-04-11 2003-04-11 半导体器件及其制造方法
CNA2006101373902A Pending CN1941419A (zh) 2002-04-11 2003-04-11 半导体器件及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2006101373902A Pending CN1941419A (zh) 2002-04-11 2003-04-11 半导体器件及其制造方法

Country Status (5)

Country Link
US (2) US6867077B2 (enExample)
JP (1) JP2003303770A (enExample)
KR (1) KR100998159B1 (enExample)
CN (2) CN100342484C (enExample)
TW (1) TWI270943B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306694B1 (en) * 1999-03-12 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Process of fabricating a semiconductor device
US6512504B1 (en) 1999-04-27 2003-01-28 Semiconductor Energy Laborayory Co., Ltd. Electronic device and electronic apparatus
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100640213B1 (ko) * 2003-12-29 2006-10-31 엘지.필립스 엘시디 주식회사 폴리실리콘 액정표시소자 제조방법
JP4063266B2 (ja) * 2004-09-30 2008-03-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、薄膜半導体装置、電気光学装置、および電子機器
US7527976B2 (en) * 2005-02-18 2009-05-05 Freescale Semiconductor, Inc. Processes for testing a region for an analyte and a process for forming an electronic device
CN102443769B (zh) * 2010-10-11 2013-11-27 北大方正集团有限公司 Pvd假片的回收方法
WO2020074999A1 (ja) 2018-10-12 2020-04-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP7341052B2 (ja) * 2019-12-26 2023-09-08 東京エレクトロン株式会社 膜形成方法及び膜形成装置
CN115498071B (zh) * 2022-09-20 2024-05-14 通威太阳能（成都）有限公司 电池的制备方法、电池和电子产品

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08139021A (ja) * 1994-09-15 1996-05-31 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
CN1128900A (zh) * 1994-07-01 1996-08-14 株式会社半导体能源研究所 半导体器件的制造方法
JPH1022289A (ja) * 1996-07-08 1998-01-23 Toshiba Corp 半導体装置およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612250A (en) * 1993-12-01 1997-03-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a catalyst
JP3562590B2 (ja) 1993-12-01 2004-09-08 株式会社半導体エネルギー研究所 半導体装置作製方法
TW279275B (enExample) * 1993-12-27 1996-06-21 Sharp Kk
JP3645378B2 (ja) * 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100440083B1 (ko) * 1996-01-23 2004-10-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체박막제작방법
US5981974A (en) * 1996-09-30 1999-11-09 Sharp Kabushiki Kaisha Semiconductor device and method for fabricating the same
US6743700B2 (en) * 2001-06-01 2004-06-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor film, semiconductor device and method of their production

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1128900A (zh) * 1994-07-01 1996-08-14 株式会社半导体能源研究所 半导体器件的制造方法
JPH08139021A (ja) * 1994-09-15 1996-05-31 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH1022289A (ja) * 1996-07-08 1998-01-23 Toshiba Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR20030081174A (ko) 2003-10-17
KR100998159B1 (ko) 2010-12-06
JP2003303770A (ja) 2003-10-24
CN1450594A (zh) 2003-10-22
TW200308024A (en) 2003-12-16
CN1941419A (zh) 2007-04-04
US20050151132A1 (en) 2005-07-14
US6867077B2 (en) 2005-03-15
TWI270943B (en) 2007-01-11
US20030193052A1 (en) 2003-10-16

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Granted publication date: 20071010

Termination date: 20140411