JP2021106217A - 膜形成方法及び膜形成装置 - Google Patents
膜形成方法及び膜形成装置 Download PDFInfo
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Abstract
Description
一実施形態の膜形成方法について、多結晶シリコン膜を形成する場合を例に挙げて説明する。図1は、一実施形態の膜形成方法を示すフローチャートである。一実施形態の膜形成方法は、積層膜を形成する工程S10と、積層膜を結晶化処理する工程S20と、積層膜の膜厚を減じる工程S30と、を有する。
図2は、図1の膜形成方法における積層膜を形成する工程S10の一例を示すフローチャートである。図3は、図1の膜形成方法における積層膜を形成する工程S10の一例を示す工程断面図である。
積層膜を結晶化処理する工程S20は、積層膜を形成する工程S10の後に行われる。本実施形態において、積層膜を結晶化処理する工程S20は、積層膜120を熱処理(アニール)することにより、積層膜120を形成するアモルファスシリコン膜を結晶化させて多結晶シリコン膜を形成する工程を含む。アニール温度は、例えば550〜800℃であってよい。
積層膜の膜厚を減じる工程S30は、積層膜を結晶化処理する工程S20の後に行われる。本実施形態において、積層膜の膜厚を減じる工程S30は、積層膜を形成する工程S10において形成された積層膜120をエッチバック処理することにより、積層膜120の膜厚を目標膜厚まで減じる工程を含む。エッチバック処理は、例えばドライエッチングにより行われてもよく、ウエットエッチングにより行われてもよい。
図4は、一実施形態の膜形成方法の作用効果を説明するための図である。図4(a)は、界面層121、バルク層122及び表面層123がこの順に積層された積層膜120を形成するアモルファスシリコン膜が結晶化するときのメカニズムを説明するための図である。図4(b)は、界面層121及びバルク層122がこの順に積層された積層膜120Xを形成するアモルファスシリコン膜が結晶化するときのメカニズムを説明するための図である。積層膜120及び積層膜120Xは、いずれも絶縁膜112上に形成されている。
上記の膜形成方法を実施できる膜形成装置について、多数枚の基板に対して一括で熱処理を行うバッチ式の縦型熱処理装置を例に挙げて説明する。但し、膜形成装置は、バッチ式の装置に限定されるものではなく、例えば基板を1枚ずつ処理する枚葉式の装置であってもよい。
(XRDによる評価)
X線回折(XRD:X-Ray Diffraction)を用いて、アモルファスシリコン膜の結晶化のしやすさを評価した結果について説明する。
二次イオン質量分析(SIMS:Secondary Ion Mass Spectrometry)を用いて、アモルファスシリコン膜の結晶化のしやすさに影響する要因を分析した結果について説明する。
分光エリプソメトリでの消衰係数(k値)を用いて、アモルファスシリコン膜の結晶化のしやすさを評価した結果について説明する。
(分光エリプソメトリによる評価)
分光エリプソメトリでの消衰係数(k値)を用いて、アモルファスシリコン積層膜の結晶化の起点を評価した結果について説明する。
まず、SiO2膜上に、アミノシランシード、Si2H6ガスを用いて形成されるアモルファスシリコン膜(以下「a−Si(Si2H6)」という。)及びa−Si(SiH4)をこの順に積層した。アミノシランシード/a−Si(Si2H6)/a−Si(SiH4)積層膜の膜厚は40nmに設定した。続いて、積層膜を550℃、575℃、600℃、625℃、650℃で12時間熱処理した後に、分光エリプソメトリによる測定を行い、k値を算出した。
透過型電子顕微鏡(TEM:Transmission Electron Microscope)を用いて、アモルファスシリコン膜の結晶化途中の膜の断面を観察した結果について説明する。
120 積層膜
121 界面層
122 バルク層
123 表面層
Claims (13)
- 下地の上に界面層、バルク層及び表面層がこの順に積層された積層膜を形成する工程と、
前記積層膜を結晶化処理する工程と、
を有し、
前記バルク層は、前記結晶化処理する工程において前記界面層よりも結晶化しやすい膜により形成され、
前記表面層は、前記結晶化処理する工程において前記バルク層よりも結晶化しやすい膜により形成される、
膜形成方法。 - 前記結晶化処理する工程の後に行われる工程であって、前記積層膜の膜厚を減じる工程を更に有する、
請求項1に記載の膜形成方法。 - 前記積層膜を形成する工程において形成される前記積層膜の膜厚は、目標膜厚よりも厚い膜厚であり、
前記積層膜の膜厚を減じる工程は、前記積層膜の膜厚を前記目標膜厚まで減じる工程である、
請求項2に記載の膜形成方法。 - 前記バルク層は、複数層構造を有し、
前記複数層構造の各層は、前記結晶化処理する工程において前記界面層よりも結晶化しやすい膜により形成される、
請求項1乃至3のいずれか一項に記載の膜形成方法。 - 前記界面層及び前記バルク層は、シリコン及び水素を含む膜により形成され、
膜中水素濃度は、前記界面層及び前記バルク層の順に低い、
請求項1乃至4のいずれか一項に記載の膜形成方法。 - 前記表面層は、シリコン及び結晶化を促進する不純物を含む膜により形成される、
請求項5に記載の膜形成方法。 - 前記表面層は、シリコン及び水素を含む膜により形成され、
膜中水素濃度は、前記界面層、前記バルク層及び前記表面層の順に低い、
請求項5に記載の膜形成方法。 - 前記界面層は、シリコン及び結晶化を阻害する不純物を含む膜により形成され、
前記バルク層は、シリコンを含む膜により形成され、
前記表面層は、シリコン及び結晶化を促進する不純物を含む膜により形成される、
請求項1乃至4のいずれか一項に記載の膜形成方法。 - 前記結晶化を阻害する不純物は、酸素、炭素又は窒素である、
請求項8に記載の膜形成方法。 - 前記結晶化を促進する不純物は、塩素、リン、ボロン、ゲルマニウム、アルミニウム又はニッケル、フッ素である、
請求項6、8又は9に記載の膜形成方法。 - 前記表面層は、前記バルク層の表面に前記結晶化を促進する不純物をドーピングすることにより形成される、
請求項6、8、9又は10に記載の膜形成方法。 - 前記表面層は、シリコンを含まず前記結晶化を阻害する不純物により形成される、
請求項1乃至5のいずれか一項に記載の膜形成方法。 - 処理部と制御部とを備える膜形成装置であって、
前記制御部は、
下地の上に界面層、バルク層及び表面層がこの順に積層された積層膜を形成する工程と、
前記積層膜を結晶化処理する工程と、
を実行するように前記処理部を制御するよう構成され、
前記バルク層は、前記結晶化処理する工程において前記界面層よりも結晶化しやすい膜により形成され、
前記表面層は、前記結晶化処理する工程において前記バルク層よりも結晶化しやすい膜により形成される、
膜形成装置。
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JP2002093705A (ja) * | 2000-06-27 | 2002-03-29 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2003303770A (ja) * | 2002-04-11 | 2003-10-24 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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