JP2003151905A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003151905A5 JP2003151905A5 JP2001351808A JP2001351808A JP2003151905A5 JP 2003151905 A5 JP2003151905 A5 JP 2003151905A5 JP 2001351808 A JP2001351808 A JP 2001351808A JP 2001351808 A JP2001351808 A JP 2001351808A JP 2003151905 A5 JP2003151905 A5 JP 2003151905A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- film
- forming
- manufacturing
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 57
- 238000004519 manufacturing process Methods 0.000 claims 17
- 238000000034 method Methods 0.000 claims 17
- 230000003197 catalytic effect Effects 0.000 claims 12
- 230000004888 barrier function Effects 0.000 claims 10
- 238000010438 heat treatment Methods 0.000 claims 8
- 239000007789 gas Substances 0.000 claims 6
- 239000012212 insulator Substances 0.000 claims 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000007864 aqueous solution Substances 0.000 claims 2
- 239000003054 catalyst Substances 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 2
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001351808A JP4326734B2 (ja) | 2001-11-16 | 2001-11-16 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001351808A JP4326734B2 (ja) | 2001-11-16 | 2001-11-16 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003151905A JP2003151905A (ja) | 2003-05-23 |
| JP2003151905A5 true JP2003151905A5 (enExample) | 2005-08-04 |
| JP4326734B2 JP4326734B2 (ja) | 2009-09-09 |
Family
ID=19164070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001351808A Expired - Fee Related JP4326734B2 (ja) | 2001-11-16 | 2001-11-16 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4326734B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7588970B2 (en) * | 2005-06-10 | 2009-09-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| WO2011155250A1 (ja) * | 2010-06-07 | 2011-12-15 | シャープ株式会社 | 結晶性半導体膜の製造方法、半導体装置、および表示装置 |
| JP6312134B2 (ja) * | 2014-07-15 | 2018-04-18 | 独立行政法人国立高等専門学校機構 | ゲルマニウム層付き基板の製造方法及びゲルマニウム層付き基板 |
-
2001
- 2001-11-16 JP JP2001351808A patent/JP4326734B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2002280301A5 (enExample) | ||
| JP3887257B2 (ja) | サリサイド構造の改良された形成方法 | |
| KR970063787A (ko) | 반도체 박막과 이의 제조 방법 및 반도체 장치와 이를 제조하는 방법 | |
| KR970063763A (ko) | 반도체 박막, 반도체 장치 및 이의 제조 방법 | |
| JP2002314076A (ja) | 金属ゲートの形成方法 | |
| TW201013773A (en) | Method for photoresist pattern removal | |
| JP2001015612A5 (enExample) | ||
| JP2002313811A5 (enExample) | ||
| TW464980B (en) | Method for selectively forming copper film | |
| TWI251305B (en) | Encapsulation of ferroelectric capacitors | |
| JPH09102483A (ja) | 半導体基板上にシリコン材料の上部構造体を形成する製造方法 | |
| JP2003017488A5 (ja) | 半導体装置の製造方法 | |
| JP2003303770A5 (enExample) | ||
| TWI316737B (en) | Method for manufacturting gate electrode for use in semiconductor device | |
| JP2003151905A5 (enExample) | ||
| JP2001319877A5 (enExample) | ||
| JP2003297750A5 (enExample) | ||
| JP2003151992A5 (enExample) | ||
| JP2003173967A5 (enExample) | ||
| JP2003173969A5 (enExample) | ||
| JP2000228526A5 (ja) | 半導体装置の作製方法 | |
| JPH08335576A (ja) | シリコン酸化膜の形成方法 | |
| JP2002313722A5 (enExample) | ||
| JP2004193621A5 (enExample) | ||
| WO2007010921A1 (ja) | 酸化膜の形成方法並びにその酸化膜を備えた半導体装置及びその製造方法 |