JP2003173967A5 - - Google Patents

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Publication number
JP2003173967A5
JP2003173967A5 JP2002071367A JP2002071367A JP2003173967A5 JP 2003173967 A5 JP2003173967 A5 JP 2003173967A5 JP 2002071367 A JP2002071367 A JP 2002071367A JP 2002071367 A JP2002071367 A JP 2002071367A JP 2003173967 A5 JP2003173967 A5 JP 2003173967A5
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JP
Japan
Prior art keywords
semiconductor film
manufacturing
semiconductor device
semiconductor
metal element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002071367A
Other languages
English (en)
Japanese (ja)
Other versions
JP4176362B2 (ja
JP2003173967A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002071367A priority Critical patent/JP4176362B2/ja
Priority claimed from JP2002071367A external-priority patent/JP4176362B2/ja
Publication of JP2003173967A publication Critical patent/JP2003173967A/ja
Publication of JP2003173967A5 publication Critical patent/JP2003173967A5/ja
Application granted granted Critical
Publication of JP4176362B2 publication Critical patent/JP4176362B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002071367A 2001-03-16 2002-03-15 半導体装置の作製方法 Expired - Fee Related JP4176362B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002071367A JP4176362B2 (ja) 2001-03-16 2002-03-15 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001075141 2001-03-16
JP2001-75141 2001-03-16
JP2001-301276 2001-09-28
JP2001301276 2001-09-28
JP2002071367A JP4176362B2 (ja) 2001-03-16 2002-03-15 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003173967A JP2003173967A (ja) 2003-06-20
JP2003173967A5 true JP2003173967A5 (enExample) 2005-08-11
JP4176362B2 JP4176362B2 (ja) 2008-11-05

Family

ID=27346262

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002071367A Expired - Fee Related JP4176362B2 (ja) 2001-03-16 2002-03-15 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4176362B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371333B2 (en) * 2005-06-07 2008-05-13 Micron Technology, Inc. Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines
KR100882909B1 (ko) * 2007-06-27 2009-02-10 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조 방법, 이를 포함하는유기전계발광표시장치, 및 그의 제조 방법
KR100994236B1 (ko) * 2009-05-22 2010-11-12 노코드 주식회사 다결정 실리콘 박막의 제조방법
US9842738B2 (en) 2014-04-09 2017-12-12 Mitsubishi Electric Corporation Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
JP7208779B2 (ja) 2018-12-11 2023-01-19 キオクシア株式会社 基板処理装置
JP2020144252A (ja) 2019-03-07 2020-09-10 セイコーエプソン株式会社 電気光学装置、電子機器、および電気光学装置の製造方法

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