JP2002217106A5 - - Google Patents
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- Publication number
- JP2002217106A5 JP2002217106A5 JP2001010890A JP2001010890A JP2002217106A5 JP 2002217106 A5 JP2002217106 A5 JP 2002217106A5 JP 2001010890 A JP2001010890 A JP 2001010890A JP 2001010890 A JP2001010890 A JP 2001010890A JP 2002217106 A5 JP2002217106 A5 JP 2002217106A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- manufacturing
- crystalline
- impurity region
- crystalline semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 94
- 239000012535 impurity Substances 0.000 claims 34
- 238000004519 manufacturing process Methods 0.000 claims 27
- 229910052751 metal Inorganic materials 0.000 claims 25
- 238000000034 method Methods 0.000 claims 25
- 239000002184 metal Substances 0.000 claims 24
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 8
- 238000005247 gettering Methods 0.000 claims 7
- 230000001678 irradiating effect Effects 0.000 claims 6
- 238000000059 patterning Methods 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 229960001716 benzalkonium Drugs 0.000 claims 3
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 229910052724 xenon Inorganic materials 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 241000287463 Phalacrocorax Species 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 229910001507 metal halide Inorganic materials 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001010890A JP2002217106A (ja) | 2001-01-18 | 2001-01-18 | 半導体装置およびその作製方法 |
| US10/046,893 US6858480B2 (en) | 2001-01-18 | 2002-01-17 | Method of manufacturing semiconductor device |
| KR1020020003115A KR100856339B1 (ko) | 2001-01-18 | 2002-01-18 | 반도체 장치 제조 방법 |
| US11/061,780 US7033871B2 (en) | 2001-01-18 | 2005-02-22 | Method of manufacturing semiconductor device |
| US11/410,274 US7605029B2 (en) | 2001-01-18 | 2006-04-25 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001010890A JP2002217106A (ja) | 2001-01-18 | 2001-01-18 | 半導体装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009180915A Division JP5256144B2 (ja) | 2009-08-03 | 2009-08-03 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002217106A JP2002217106A (ja) | 2002-08-02 |
| JP2002217106A5 true JP2002217106A5 (enExample) | 2005-08-11 |
Family
ID=18878117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001010890A Withdrawn JP2002217106A (ja) | 2001-01-18 | 2001-01-18 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002217106A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6858480B2 (en) | 2001-01-18 | 2005-02-22 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| JP5202046B2 (ja) * | 2008-03-13 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
| JP5581411B2 (ja) * | 2013-02-12 | 2014-08-27 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2001
- 2001-01-18 JP JP2001010890A patent/JP2002217106A/ja not_active Withdrawn
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