JPH10223533A5 - - Google Patents

Info

Publication number
JPH10223533A5
JPH10223533A5 JP1997044573A JP4457397A JPH10223533A5 JP H10223533 A5 JPH10223533 A5 JP H10223533A5 JP 1997044573 A JP1997044573 A JP 1997044573A JP 4457397 A JP4457397 A JP 4457397A JP H10223533 A5 JPH10223533 A5 JP H10223533A5
Authority
JP
Japan
Prior art keywords
crystalline film
film
semiconductor device
manufacturing
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997044573A
Other languages
English (en)
Japanese (ja)
Other versions
JP3942683B2 (ja
JPH10223533A (ja
Filing date
Publication date
Priority claimed from JP04457397A external-priority patent/JP3942683B2/ja
Priority to JP04457397A priority Critical patent/JP3942683B2/ja
Application filed filed Critical
Priority to US09/010,416 priority patent/US6162704A/en
Priority to KR1019980001975A priority patent/KR100538892B1/ko
Publication of JPH10223533A publication Critical patent/JPH10223533A/ja
Priority to US09/707,348 priority patent/US6461943B1/en
Priority to US10/265,181 priority patent/US7115452B2/en
Publication of JPH10223533A5 publication Critical patent/JPH10223533A5/ja
Priority to KR1020050016941A priority patent/KR100572819B1/ko
Publication of JP3942683B2 publication Critical patent/JP3942683B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP04457397A 1997-02-12 1997-02-12 半導体装置作製方法 Expired - Fee Related JP3942683B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP04457397A JP3942683B2 (ja) 1997-02-12 1997-02-12 半導体装置作製方法
US09/010,416 US6162704A (en) 1997-02-12 1998-01-21 Method of making semiconductor device
KR1019980001975A KR100538892B1 (ko) 1997-02-12 1998-01-23 반도체디바이스제조방법
US09/707,348 US6461943B1 (en) 1997-02-12 2000-11-06 Method of making semiconductor device
US10/265,181 US7115452B2 (en) 1997-02-12 2002-10-04 Method of making semiconductor device
KR1020050016941A KR100572819B1 (ko) 1997-02-12 2005-02-28 반도체 디바이스 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04457397A JP3942683B2 (ja) 1997-02-12 1997-02-12 半導体装置作製方法

Publications (3)

Publication Number Publication Date
JPH10223533A JPH10223533A (ja) 1998-08-21
JPH10223533A5 true JPH10223533A5 (enExample) 2005-01-06
JP3942683B2 JP3942683B2 (ja) 2007-07-11

Family

ID=12695258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04457397A Expired - Fee Related JP3942683B2 (ja) 1997-02-12 1997-02-12 半導体装置作製方法

Country Status (3)

Country Link
US (3) US6162704A (enExample)
JP (1) JP3942683B2 (enExample)
KR (2) KR100538892B1 (enExample)

Families Citing this family (59)

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US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6100562A (en) 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6355509B1 (en) * 1997-01-28 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication
JP3942683B2 (ja) 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3844566B2 (ja) * 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7166500B2 (en) * 1997-10-21 2007-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6821710B1 (en) * 1998-02-11 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
US6294441B1 (en) 1998-08-18 2001-09-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4545260B2 (ja) * 1998-12-03 2010-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4531177B2 (ja) * 1998-12-28 2010-08-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6878968B1 (en) * 1999-05-10 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3425392B2 (ja) 1999-05-27 2003-07-14 シャープ株式会社 半導体装置の製造方法
JP2001135573A (ja) 1999-11-02 2001-05-18 Sharp Corp 半導体装置の製造方法およびその半導体装置
JP4761616B2 (ja) * 1999-11-26 2011-08-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001319878A (ja) 2000-05-11 2001-11-16 Sharp Corp 半導体製造方法
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
TWI277057B (en) * 2000-10-23 2007-03-21 Semiconductor Energy Lab Display device
US6927753B2 (en) * 2000-11-07 2005-08-09 Semiconductor Energy Laboratory Co., Ltd. Display device
US7045444B2 (en) 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI221645B (en) 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (ja) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5088993B2 (ja) 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6812081B2 (en) 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
JP2002313804A (ja) 2001-04-16 2002-10-25 Sharp Corp 半導体装置およびその製造方法
JP5072157B2 (ja) * 2001-09-27 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003163221A (ja) 2001-11-28 2003-06-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6861338B2 (en) 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US7374976B2 (en) 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
TWI334156B (en) * 2002-12-25 2010-12-01 Semiconductor Energy Lab Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device
US7276402B2 (en) * 2003-12-25 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100612853B1 (ko) * 2004-07-21 2006-08-14 삼성전자주식회사 와이어 형태의 실리사이드를 포함하는 Ｓｉ 계열 물질층및 그 제조방법
US7575959B2 (en) * 2004-11-26 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8088676B2 (en) * 2005-04-28 2012-01-03 The Hong Kong University Of Science And Technology Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
KR100653853B1 (ko) * 2005-05-24 2006-12-05 네오폴리((주)) 비금속 씨드 에피 성장을 이용한 비정질 반도체 박막의결정화 방법 및 이를 이용한 다결정 박막 트랜지스터의제조방법
JP5352081B2 (ja) * 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100875432B1 (ko) 2007-05-31 2008-12-22 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조 방법, 이를 이용하여 형성된박막트랜지스터, 그의 제조방법 및 이를 포함하는유기전계발광표시장치
KR100889626B1 (ko) 2007-08-22 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 이를 구비한유기전계발광표시장치, 및 그의 제조방법
KR100889627B1 (ko) 2007-08-23 2009-03-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 구비한유기전계발광표시장치
KR100982310B1 (ko) 2008-03-27 2010-09-15 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR100989136B1 (ko) 2008-04-11 2010-10-20 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
KR101002666B1 (ko) 2008-07-14 2010-12-21 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치
JP7581098B2 (ja) * 2021-03-19 2024-11-12 キオクシア株式会社 半導体装置の製造方法
KR20230060633A (ko) 2021-10-27 2023-05-08 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법

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JP4056571B2 (ja) * 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
JPH10228248A (ja) * 1996-12-09 1998-08-25 Semiconductor Energy Lab Co Ltd アクティブマトリクス表示装置およびその作製方法
JP3942683B2 (ja) * 1997-02-12 2007-07-11 株式会社半導体エネルギー研究所 半導体装置作製方法
TW379360B (en) * 1997-03-03 2000-01-11 Semiconductor Energy Lab Method of manufacturing a semiconductor device
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