JP2002313722A5 - - Google Patents
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- Publication number
- JP2002313722A5 JP2002313722A5 JP2002019634A JP2002019634A JP2002313722A5 JP 2002313722 A5 JP2002313722 A5 JP 2002313722A5 JP 2002019634 A JP2002019634 A JP 2002019634A JP 2002019634 A JP2002019634 A JP 2002019634A JP 2002313722 A5 JP2002313722 A5 JP 2002313722A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- crystal structure
- metal element
- manufacturing
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 62
- 239000013078 crystal Substances 0.000 claims 24
- 238000000034 method Methods 0.000 claims 19
- 229910052751 metal Inorganic materials 0.000 claims 17
- 239000002184 metal Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 16
- 239000012535 impurity Substances 0.000 claims 13
- 238000005247 gettering Methods 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 229910052724 xenon Inorganic materials 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 229910052786 argon Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 229910052734 helium Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052743 krypton Inorganic materials 0.000 claims 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 229910001507 metal halide Inorganic materials 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002019634A JP4346852B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001019357 | 2001-01-29 | ||
| JP2001-22398 | 2001-01-30 | ||
| JP2001-19357 | 2001-01-30 | ||
| JP2001022398 | 2001-01-30 | ||
| JP2002019634A JP4346852B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002313722A JP2002313722A (ja) | 2002-10-25 |
| JP2002313722A5 true JP2002313722A5 (enExample) | 2005-08-11 |
| JP4346852B2 JP4346852B2 (ja) | 2009-10-21 |
Family
ID=27345833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002019634A Expired - Fee Related JP4346852B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4346852B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4651933B2 (ja) * | 2002-11-26 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7335255B2 (en) | 2002-11-26 | 2008-02-26 | Semiconductor Energy Laboratory, Co., Ltd. | Manufacturing method of semiconductor device |
| US8115206B2 (en) | 2005-07-22 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP7516510B2 (ja) * | 2019-09-06 | 2024-07-16 | アプライド マテリアルズ インコーポレイテッド | シャッターディスク |
| TW202535229A (zh) * | 2024-02-22 | 2025-09-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法及半導體裝置 |
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2002
- 2002-01-29 JP JP2002019634A patent/JP4346852B2/ja not_active Expired - Fee Related