JP4346852B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4346852B2 JP4346852B2 JP2002019634A JP2002019634A JP4346852B2 JP 4346852 B2 JP4346852 B2 JP 4346852B2 JP 2002019634 A JP2002019634 A JP 2002019634A JP 2002019634 A JP2002019634 A JP 2002019634A JP 4346852 B2 JP4346852 B2 JP 4346852B2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002019634A JP4346852B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001019357 | 2001-01-29 | ||
| JP2001-22398 | 2001-01-30 | ||
| JP2001-19357 | 2001-01-30 | ||
| JP2001022398 | 2001-01-30 | ||
| JP2002019634A JP4346852B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002313722A JP2002313722A (ja) | 2002-10-25 |
| JP2002313722A5 JP2002313722A5 (enExample) | 2005-08-11 |
| JP4346852B2 true JP4346852B2 (ja) | 2009-10-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002019634A Expired - Fee Related JP4346852B2 (ja) | 2001-01-29 | 2002-01-29 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4346852B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4651933B2 (ja) * | 2002-11-26 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7335255B2 (en) | 2002-11-26 | 2008-02-26 | Semiconductor Energy Laboratory, Co., Ltd. | Manufacturing method of semiconductor device |
| US8115206B2 (en) | 2005-07-22 | 2012-02-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP7516510B2 (ja) * | 2019-09-06 | 2024-07-16 | アプライド マテリアルズ インコーポレイテッド | シャッターディスク |
| TW202535229A (zh) * | 2024-02-22 | 2025-09-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置的製造方法及半導體裝置 |
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