JP2003173969A5 - - Google Patents
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- Publication number
- JP2003173969A5 JP2003173969A5 JP2002158582A JP2002158582A JP2003173969A5 JP 2003173969 A5 JP2003173969 A5 JP 2003173969A5 JP 2002158582 A JP2002158582 A JP 2002158582A JP 2002158582 A JP2002158582 A JP 2002158582A JP 2003173969 A5 JP2003173969 A5 JP 2003173969A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- rare gas
- manufacturing
- amorphous structure
- metal element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 31
- 239000007789 gas Substances 0.000 claims 17
- 238000004519 manufacturing process Methods 0.000 claims 11
- 238000000034 method Methods 0.000 claims 9
- 239000002184 metal Substances 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000013078 crystal Substances 0.000 claims 6
- 230000004888 barrier function Effects 0.000 claims 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 230000008021 deposition Effects 0.000 claims 3
- 229910052786 argon Inorganic materials 0.000 claims 2
- 238000005247 gettering Methods 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052756 noble gas Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002158582A JP4216003B2 (ja) | 2001-06-01 | 2002-05-31 | 半導体装置の作製方法 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001167330 | 2001-06-01 | ||
| JP2001-167330 | 2001-06-01 | ||
| JP2001-209354 | 2001-07-10 | ||
| JP2001209354 | 2001-07-10 | ||
| JP2001-295484 | 2001-09-27 | ||
| JP2001295484 | 2001-09-27 | ||
| JP2002158582A JP4216003B2 (ja) | 2001-06-01 | 2002-05-31 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008004408A Division JP5106136B2 (ja) | 2001-06-01 | 2008-01-11 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003173969A JP2003173969A (ja) | 2003-06-20 |
| JP2003173969A5 true JP2003173969A5 (enExample) | 2005-09-22 |
| JP4216003B2 JP4216003B2 (ja) | 2009-01-28 |
Family
ID=27482312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002158582A Expired - Fee Related JP4216003B2 (ja) | 2001-06-01 | 2002-05-31 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4216003B2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743700B2 (en) * | 2001-06-01 | 2004-06-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor film, semiconductor device and method of their production |
| JP4761734B2 (ja) * | 2003-08-15 | 2011-08-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5063867B2 (ja) * | 2005-04-21 | 2012-10-31 | 株式会社Ｓｕｍｃｏ | Ｓｏｉ基板の製造方法 |
| TWI384295B (zh) * | 2008-11-10 | 2013-02-01 | Htc Corp | 可攜式電子裝置及其光源之控制方法 |
| KR101901361B1 (ko) | 2011-12-02 | 2018-09-27 | 삼성디스플레이 주식회사 | 다결정 실리콘층의 제조 방법 및 이를 이용한 박막 트랜지스터의 형성방법 |
| JP2020502803A (ja) * | 2016-12-16 | 2020-01-23 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | チャンバドリフティングなしで高温処理を可能にする方法 |
-
2002
- 2002-05-31 JP JP2002158582A patent/JP4216003B2/ja not_active Expired - Fee Related
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