JP2003332342A5 - - Google Patents

Download PDF

Info

Publication number
JP2003332342A5
JP2003332342A5 JP2002138895A JP2002138895A JP2003332342A5 JP 2003332342 A5 JP2003332342 A5 JP 2003332342A5 JP 2002138895 A JP2002138895 A JP 2002138895A JP 2002138895 A JP2002138895 A JP 2002138895A JP 2003332342 A5 JP2003332342 A5 JP 2003332342A5
Authority
JP
Japan
Prior art keywords
semiconductor film
rare gas
semiconductor
forming
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002138895A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003332342A (ja
JP4267253B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2002138895A priority Critical patent/JP4267253B2/ja
Priority claimed from JP2002138895A external-priority patent/JP4267253B2/ja
Publication of JP2003332342A publication Critical patent/JP2003332342A/ja
Publication of JP2003332342A5 publication Critical patent/JP2003332342A5/ja
Application granted granted Critical
Publication of JP4267253B2 publication Critical patent/JP4267253B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002138895A 2002-05-14 2002-05-14 半導体装置の作製方法 Expired - Fee Related JP4267253B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002138895A JP4267253B2 (ja) 2002-05-14 2002-05-14 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002138895A JP4267253B2 (ja) 2002-05-14 2002-05-14 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003332342A JP2003332342A (ja) 2003-11-21
JP2003332342A5 true JP2003332342A5 (enExample) 2005-09-22
JP4267253B2 JP4267253B2 (ja) 2009-05-27

Family

ID=29700221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002138895A Expired - Fee Related JP4267253B2 (ja) 2002-05-14 2002-05-14 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4267253B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101623224B1 (ko) 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법

Similar Documents

Publication Publication Date Title
US12068156B2 (en) Selective deposition of SiOC thin films
JP5741382B2 (ja) 薄膜の形成方法及び成膜装置
TWI475599B (zh) 半導體裝置之製造方法、基板處理方法、基板處理裝置及記錄媒體
TWI361226B (en) Pretreatment processes within a batch ald reactor
JP3817621B2 (ja) プラズマ原子層蒸着法を利用したタンタル酸化膜形成方法
TW201205674A (en) Method of manufacturing a semiconductor device, method of cleaning a process vessel, and substrate processing apparatus
JP2009545138A5 (enExample)
TW201132790A (en) Processes for passivating dielectric films
JP2006086521A5 (enExample)
JP2006516809A (ja) Ta2O5含有層形成方法
TW201214562A (en) Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus
JP2006054432A (ja) 成膜方法、成膜装置及び記憶媒体
TW200849338A (en) Periodic plasma annealing in an ALD-type process
KR20120074207A (ko) 텅스텐막 또는 산화 텅스텐막 상으로의 산화 실리콘막의 성막 방법 및 성막 장치
JP2005012168A (ja) シリコン窒化膜の成膜方法
TW201250044A (en) Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
TW201142950A (en) Method of manufacturing semiconductor device and substrate processing apparatus
JP2009532860A5 (enExample)
JP2015026660A (ja) クリーニング方法、半導体装置の製造方法、基板処理装置およびプログラム
TW200907122A (en) Film formation apparatus and method for using the same
JP4001509B2 (ja) 半導体素子の拡散防止膜形成方法
TWI363384B (enExample)
JP2007531304A5 (enExample)
JP2002064153A (ja) 半導体素子のキャパシタ製造方法
JP2003142425A5 (enExample)