JP2003142425A5 - - Google Patents
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- Publication number
- JP2003142425A5 JP2003142425A5 JP2002177191A JP2002177191A JP2003142425A5 JP 2003142425 A5 JP2003142425 A5 JP 2003142425A5 JP 2002177191 A JP2002177191 A JP 2002177191A JP 2002177191 A JP2002177191 A JP 2002177191A JP 2003142425 A5 JP2003142425 A5 JP 2003142425A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- tungsten
- film forming
- nitriding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 65
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 52
- 229910052721 tungsten Inorganic materials 0.000 claims description 52
- 239000010937 tungsten Substances 0.000 claims description 52
- 238000005121 nitriding Methods 0.000 claims description 18
- 239000010936 titanium Substances 0.000 claims description 15
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 7
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 49
- 230000004888 barrier function Effects 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- MBMUKWOWYFSHSN-UHFFFAOYSA-N [W+4].[W+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C Chemical compound [W+4].[W+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C.C[N-]C MBMUKWOWYFSHSN-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002177191A JP4103461B2 (ja) | 2001-08-24 | 2002-06-18 | 成膜方法 |
| PCT/JP2002/008533 WO2003018868A1 (en) | 2001-08-24 | 2002-08-23 | Film forming method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001255265 | 2001-08-24 | ||
| JP2001-255265 | 2001-08-24 | ||
| JP2002177191A JP4103461B2 (ja) | 2001-08-24 | 2002-06-18 | 成膜方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007282835A Division JP4595989B2 (ja) | 2001-08-24 | 2007-10-31 | 成膜方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003142425A JP2003142425A (ja) | 2003-05-16 |
| JP2003142425A5 true JP2003142425A5 (enExample) | 2005-06-02 |
| JP4103461B2 JP4103461B2 (ja) | 2008-06-18 |
Family
ID=26620982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002177191A Expired - Fee Related JP4103461B2 (ja) | 2001-08-24 | 2002-06-18 | 成膜方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4103461B2 (enExample) |
| WO (1) | WO2003018868A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7515264B2 (en) | 1999-06-15 | 2009-04-07 | Tokyo Electron Limited | Particle-measuring system and particle-measuring method |
| JP4032872B2 (ja) * | 2001-08-14 | 2008-01-16 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
| JP3956049B2 (ja) * | 2003-03-07 | 2007-08-08 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
| JP2006097099A (ja) * | 2004-09-30 | 2006-04-13 | Tri Chemical Laboratory Inc | 膜形成材料、膜形成方法、及び素子 |
| JP2006128611A (ja) * | 2004-09-30 | 2006-05-18 | Tri Chemical Laboratory Inc | 膜形成材料、膜形成方法、及び素子 |
| JP4591917B2 (ja) * | 2004-09-30 | 2010-12-01 | 株式会社トリケミカル研究所 | 導電性モリブデンナイトライド膜形成方法 |
| JP2007046134A (ja) * | 2005-08-11 | 2007-02-22 | Tokyo Electron Ltd | 金属系膜形成方法及びプログラムを記録した記録媒体 |
| JP5204964B2 (ja) * | 2006-10-17 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2011100962A (ja) * | 2009-10-09 | 2011-05-19 | Tokyo Electron Ltd | 成膜方法及びプラズマ処理装置 |
| JP5864503B2 (ja) | 2013-09-30 | 2016-02-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| WO2015145750A1 (ja) * | 2014-03-28 | 2015-10-01 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
| CN111066124A (zh) * | 2017-09-25 | 2020-04-24 | 株式会社国际电气 | 半导体装置的制造方法、基板处理装置及程序 |
| JP7023150B2 (ja) * | 2018-03-26 | 2022-02-21 | 東京エレクトロン株式会社 | タングステン膜の成膜方法及び制御装置 |
| CN111052312B (zh) | 2018-03-26 | 2025-04-15 | 株式会社国际电气 | 半导体器件的制造方法、衬底处理装置及程序 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS633436A (ja) * | 1986-06-23 | 1988-01-08 | Nec Corp | 半導体装置の製造方法 |
| US5306666A (en) * | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
| JPH0794425A (ja) * | 1993-09-24 | 1995-04-07 | Toshiba Corp | 金属薄膜の形成方法および金属薄膜の形成装置 |
| JP2800788B2 (ja) * | 1996-06-27 | 1998-09-21 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH10237662A (ja) * | 1996-12-24 | 1998-09-08 | Sony Corp | 金属膜のプラズマｃｖｄ方法、および金属窒化物膜の形成方法ならびに半導体装置 |
| WO2000042232A1 (en) * | 1999-01-13 | 2000-07-20 | Tokyo Electron Limited | Tungsten layer forming method and laminate structure of tungsten layer |
| JP3292171B2 (ja) * | 1999-03-29 | 2002-06-17 | 日本電気株式会社 | 半導体装置の製造方法 |
-
2002
- 2002-06-18 JP JP2002177191A patent/JP4103461B2/ja not_active Expired - Fee Related
- 2002-08-23 WO PCT/JP2002/008533 patent/WO2003018868A1/ja not_active Ceased
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