WO2003018868A1 - Procede de formation de film - Google Patents
Procede de formation de film Download PDFInfo
- Publication number
- WO2003018868A1 WO2003018868A1 PCT/JP2002/008533 JP0208533W WO03018868A1 WO 2003018868 A1 WO2003018868 A1 WO 2003018868A1 JP 0208533 W JP0208533 W JP 0208533W WO 03018868 A1 WO03018868 A1 WO 03018868A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- film
- forming
- tungsten
- nitrided
- film forming
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/80—After-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001255265 | 2001-08-24 | ||
JP2001-255265 | 2001-08-24 | ||
JP2002-177191 | 2002-06-18 | ||
JP2002177191A JP4103461B2 (ja) | 2001-08-24 | 2002-06-18 | 成膜方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003018868A1 true WO2003018868A1 (fr) | 2003-03-06 |
Family
ID=26620982
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/008533 WO2003018868A1 (fr) | 2001-08-24 | 2002-08-23 | Procede de formation de film |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4103461B2 (ja) |
WO (1) | WO2003018868A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9187826B2 (en) | 2013-09-30 | 2015-11-17 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium |
CN110359027A (zh) * | 2018-03-26 | 2019-10-22 | 东京毅力科创株式会社 | 钨膜的成膜方法及控制装置 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7515264B2 (en) | 1999-06-15 | 2009-04-07 | Tokyo Electron Limited | Particle-measuring system and particle-measuring method |
JP4032872B2 (ja) * | 2001-08-14 | 2008-01-16 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
JP3956049B2 (ja) * | 2003-03-07 | 2007-08-08 | 東京エレクトロン株式会社 | タングステン膜の形成方法 |
JP2006128611A (ja) * | 2004-09-30 | 2006-05-18 | Tri Chemical Laboratory Inc | 膜形成材料、膜形成方法、及び素子 |
JP4591917B2 (ja) * | 2004-09-30 | 2010-12-01 | 株式会社トリケミカル研究所 | 導電性モリブデンナイトライド膜形成方法 |
JP2006097099A (ja) * | 2004-09-30 | 2006-04-13 | Tri Chemical Laboratory Inc | 膜形成材料、膜形成方法、及び素子 |
JP2007046134A (ja) * | 2005-08-11 | 2007-02-22 | Tokyo Electron Ltd | 金属系膜形成方法及びプログラムを記録した記録媒体 |
JP5204964B2 (ja) * | 2006-10-17 | 2013-06-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP2011100962A (ja) * | 2009-10-09 | 2011-05-19 | Tokyo Electron Ltd | 成膜方法及びプラズマ処理装置 |
WO2015145750A1 (ja) * | 2014-03-28 | 2015-10-01 | 株式会社日立国際電気 | 半導体デバイスの製造方法及び基板処理装置 |
WO2019058608A1 (ja) * | 2017-09-25 | 2019-03-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置及びプログラム |
JP7009615B2 (ja) | 2018-03-26 | 2022-01-25 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS633436A (ja) * | 1986-06-23 | 1988-01-08 | Nec Corp | 半導体装置の製造方法 |
US5306666A (en) * | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
JPH0794425A (ja) * | 1993-09-24 | 1995-04-07 | Toshiba Corp | 金属薄膜の形成方法および金属薄膜の形成装置 |
JP2800788B2 (ja) * | 1996-06-27 | 1998-09-21 | 日本電気株式会社 | 半導体装置の製造方法 |
US6040021A (en) * | 1996-12-24 | 2000-03-21 | Sony Corporation | Plasma CVD process for metal films and metal nitride films |
WO2000042232A1 (fr) * | 1999-01-13 | 2000-07-20 | Tokyo Electron Limited | Procede de formation de couche de tungstene et structure laminee a couche de tungstene |
JP2000277459A (ja) * | 1999-03-29 | 2000-10-06 | Nec Corp | チタン膜窒化方法及び半導体装置 |
-
2002
- 2002-06-18 JP JP2002177191A patent/JP4103461B2/ja not_active Expired - Fee Related
- 2002-08-23 WO PCT/JP2002/008533 patent/WO2003018868A1/ja active Search and Examination
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS633436A (ja) * | 1986-06-23 | 1988-01-08 | Nec Corp | 半導体装置の製造方法 |
US5306666A (en) * | 1992-07-24 | 1994-04-26 | Nippon Steel Corporation | Process for forming a thin metal film by chemical vapor deposition |
JPH0794425A (ja) * | 1993-09-24 | 1995-04-07 | Toshiba Corp | 金属薄膜の形成方法および金属薄膜の形成装置 |
JP2800788B2 (ja) * | 1996-06-27 | 1998-09-21 | 日本電気株式会社 | 半導体装置の製造方法 |
US6040021A (en) * | 1996-12-24 | 2000-03-21 | Sony Corporation | Plasma CVD process for metal films and metal nitride films |
WO2000042232A1 (fr) * | 1999-01-13 | 2000-07-20 | Tokyo Electron Limited | Procede de formation de couche de tungstene et structure laminee a couche de tungstene |
JP2000277459A (ja) * | 1999-03-29 | 2000-10-06 | Nec Corp | チタン膜窒化方法及び半導体装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9187826B2 (en) | 2013-09-30 | 2015-11-17 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium |
US9558937B2 (en) | 2013-09-30 | 2017-01-31 | Hitachi Kokusai Electric Inc. | Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium |
CN110359027A (zh) * | 2018-03-26 | 2019-10-22 | 东京毅力科创株式会社 | 钨膜的成膜方法及控制装置 |
Also Published As
Publication number | Publication date |
---|---|
JP4103461B2 (ja) | 2008-06-18 |
JP2003142425A (ja) | 2003-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2003018868A1 (fr) | Procede de formation de film | |
MXPA02009350A (es) | Herramienta de carburo cementado y metodo de realizacion. | |
AU2002236571A1 (en) | Apparatus and method for electrochemically depositing metal on a semiconductor workpiece | |
AU2002354103A1 (en) | Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method | |
PT1405621E (pt) | Processo de prepara??o de comprimidos | |
ZA996219B (en) | Packaging bag, packaging containing snack confectionery, packaging container and method for manufacturing same. | |
WO2002079537A3 (en) | W-cvd with fluorine-free tungsten nucleation | |
AU2003201868A1 (en) | Aqueous agent for treating substrate, method for treating substrate and treated substrate | |
IL151549A0 (en) | Nitrided valve metals and processes for making the same | |
MXPA03009961A (es) | Metodo y aparato para hacer bolsas reforzadas. | |
AU2003224081A1 (en) | Method for producing a semiconductor component, and semiconductor component produced by the same | |
ZA200306360B (en) | Method and device for producing thin wafers from a film of active ingredients. | |
MXPA02010927A (es) | Metodo y sistema para fabricar productos de tisu, y productos hechos por el mismo. | |
WO2000040784A3 (en) | Methods for coating metallic articles | |
HUP9801540A1 (hu) | Eljárás és betétben edzhető vagy karbonitridálható acél nyers alkatrészek elállítására | |
AU2003253124A1 (en) | An electronic product, a body and a method of manufacturing | |
EP1443544A3 (en) | Semiconductor substrate, method for fabricating the same, and method for fabricating a semiconductor device | |
WO2004032703A3 (en) | Antimicrobial packaged medical device and method of preparing same | |
AU2003211404A1 (en) | Dynamic pressure bearing manufacturing method, dynamic pressure bearing, and dynamic pressure bearing manufacturing device | |
WO2003014242A1 (fr) | Bande recouverte d'un double adhesif et procede de fabrication de puce pour circuit integre utilisant cette bande | |
AU2003262527A1 (en) | Packaging, blank therefor and method for the production thereof | |
EP1610394A4 (en) | SEMICONDUCTOR COMPONENT, PROCESS FOR ITS MANUFACTURE AND PROCESS FOR PRODUCING A COMPOSITE METAL THIN FILM | |
CA2420831A1 (en) | Method for processing ginseng and processed ginseng obtained by the same | |
AU2002302393A1 (en) | Fluid container, its manufacturing method and apparatus | |
ZA200407361B (en) | Acyl-3-carboxyphenylurea derivatives, method for production and use thereof. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): KR Kind code of ref document: A1 Designated state(s): KR US |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) |