JP2004288753A5 - - Google Patents
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- Publication number
- JP2004288753A5 JP2004288753A5 JP2003076646A JP2003076646A JP2004288753A5 JP 2004288753 A5 JP2004288753 A5 JP 2004288753A5 JP 2003076646 A JP2003076646 A JP 2003076646A JP 2003076646 A JP2003076646 A JP 2003076646A JP 2004288753 A5 JP2004288753 A5 JP 2004288753A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- gas
- electrode
- substrate
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 description 30
- 239000007789 gas Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000000758 substrate Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910021332 silicide Inorganic materials 0.000 description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 229910052743 krypton Inorganic materials 0.000 description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 6
- 229910052754 neon Inorganic materials 0.000 description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229910052724 xenon Inorganic materials 0.000 description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003076646A JP4170120B2 (ja) | 2003-03-19 | 2003-03-19 | 半導体装置の作製方法 |
| US10/804,053 US7465966B2 (en) | 2003-03-19 | 2004-03-19 | Film formation method and manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003076646A JP4170120B2 (ja) | 2003-03-19 | 2003-03-19 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004288753A JP2004288753A (ja) | 2004-10-14 |
| JP2004288753A5 true JP2004288753A5 (enExample) | 2006-04-06 |
| JP4170120B2 JP4170120B2 (ja) | 2008-10-22 |
Family
ID=32984815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003076646A Expired - Fee Related JP4170120B2 (ja) | 2003-03-19 | 2003-03-19 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7465966B2 (enExample) |
| JP (1) | JP4170120B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7824520B2 (en) * | 2003-03-26 | 2010-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Plasma treatment apparatus |
| WO2006049130A1 (ja) * | 2004-11-05 | 2006-05-11 | Hitachi Kokusai Electric Inc. | 半導体装置の製造方法 |
| EP1994577A1 (en) * | 2006-03-03 | 2008-11-26 | Philips Intellectual Property & Standards GmbH | Electroluminescent arrangement |
| US7727773B2 (en) | 2006-10-31 | 2010-06-01 | Semiconductor Energy Laboratory Co., Ltd | Method of manufacturing an analytical sample and method of analyzing an analytical sample |
| US7897482B2 (en) * | 2007-05-31 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR20130057460A (ko) * | 2010-08-31 | 2013-05-31 | 시마쯔 코포레이션 | 비정질 질화 규소막 및 그 제조 방법 |
| KR101832361B1 (ko) * | 2011-01-19 | 2018-04-16 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| US9722212B2 (en) * | 2011-02-14 | 2017-08-01 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device, light-emitting device, and manufacturing method and manufacturing apparatus thereof |
| CN107799656B (zh) * | 2016-09-07 | 2019-12-06 | 元太科技工业股份有限公司 | 有机发光元件 |
| US20220209166A1 (en) * | 2019-04-11 | 2022-06-30 | Sharp Kabushiki Kaisha | Light-emitting element and display device |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US52950A (en) * | 1866-03-06 | Iproveivient in tailorsj measures | ||
| JPS5892218A (ja) | 1981-11-28 | 1983-06-01 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPS5968921A (ja) | 1982-10-12 | 1984-04-19 | Matsushita Electric Ind Co Ltd | 薄膜の形成方法 |
| JPH0640546B2 (ja) | 1985-07-09 | 1994-05-25 | 松下電器産業株式会社 | 窒化シリコン薄膜の製造方法 |
| JP2642849B2 (ja) * | 1993-08-24 | 1997-08-20 | 株式会社フロンテック | 薄膜の製造方法および製造装置 |
| JP3464287B2 (ja) | 1994-09-05 | 2003-11-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6699530B2 (en) * | 1995-07-06 | 2004-03-02 | Applied Materials, Inc. | Method for constructing a film on a semiconductor wafer |
| JP3045945B2 (ja) | 1995-03-30 | 2000-05-29 | 川崎製鉄株式会社 | 窒化珪素薄膜の形成方法 |
| US6631022B1 (en) * | 1999-05-28 | 2003-10-07 | Sony Corporation | Optical device, a fabrication method thereof, a driving method thereof and a camera system |
| JP2000340562A (ja) | 1999-05-31 | 2000-12-08 | Hitachi Ltd | 半導体装置及びその製造方法 |
| TW513753B (en) | 2000-03-27 | 2002-12-11 | Semiconductor Energy Lab | Semiconductor display device and manufacturing method thereof |
| SG126714A1 (en) * | 2002-01-24 | 2006-11-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
-
2003
- 2003-03-19 JP JP2003076646A patent/JP4170120B2/ja not_active Expired - Fee Related
-
2004
- 2004-03-19 US US10/804,053 patent/US7465966B2/en not_active Expired - Fee Related
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