JP2007526601A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2007526601A5 JP2007526601A5 JP2006553410A JP2006553410A JP2007526601A5 JP 2007526601 A5 JP2007526601 A5 JP 2007526601A5 JP 2006553410 A JP2006553410 A JP 2006553410A JP 2006553410 A JP2006553410 A JP 2006553410A JP 2007526601 A5 JP2007526601 A5 JP 2007526601A5
- Authority
- JP
- Japan
- Prior art keywords
- diffusion barrier
- process chamber
- barrier system
- layer
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims 7
- 238000009792 diffusion process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 239000003989 dielectric material Substances 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 238000005538 encapsulation Methods 0.000 claims 2
- -1 oxides Chemical class 0.000 claims 2
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910020286 SiOxNy Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 230000002452 interceptive effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54627404P | 2004-02-20 | 2004-02-20 | |
| PCT/CH2005/000088 WO2005081333A2 (en) | 2004-02-20 | 2005-02-16 | Diffusion barrier layer and method for manufacturing a diffusion barrier layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007526601A JP2007526601A (ja) | 2007-09-13 |
| JP2007526601A5 true JP2007526601A5 (enExample) | 2008-02-28 |
Family
ID=34886254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006553410A Pending JP2007526601A (ja) | 2004-02-20 | 2005-02-16 | 拡散バリア層および拡散バリア層の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7492091B2 (enExample) |
| EP (1) | EP1719192A2 (enExample) |
| JP (1) | JP2007526601A (enExample) |
| CN (1) | CN1977404B (enExample) |
| TW (1) | TWI384583B (enExample) |
| WO (1) | WO2005081333A2 (enExample) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8652625B2 (en) | 2004-09-21 | 2014-02-18 | Konica Minolta Holdings, Inc. | Transparent gas barrier film |
| US8344410B2 (en) * | 2004-10-14 | 2013-01-01 | Daktronics, Inc. | Flexible pixel element and signal distribution means |
| US7868903B2 (en) * | 2004-10-14 | 2011-01-11 | Daktronics, Inc. | Flexible pixel element fabrication and sealing method |
| US7893948B1 (en) | 2004-10-14 | 2011-02-22 | Daktronics, Inc. | Flexible pixel hardware and method |
| WO2008026499A1 (en) * | 2006-08-29 | 2008-03-06 | Pioneer Corporation | Gas barrier film and method for manufacturing the same |
| JP5253838B2 (ja) * | 2007-02-23 | 2013-07-31 | 三井化学東セロ株式会社 | 薄膜製造方法 |
| JP5164465B2 (ja) * | 2007-07-27 | 2013-03-21 | 株式会社アルバック | 樹脂基板 |
| JP5164464B2 (ja) * | 2007-07-27 | 2013-03-21 | 株式会社アルバック | 樹脂基板 |
| US8319428B2 (en) * | 2009-06-29 | 2012-11-27 | Sharp Kabushiki Kaisha | Sealing film for organic EL element, organic EL element, and organic EL display |
| EP2451991B1 (en) | 2009-07-08 | 2019-07-03 | Aixtron SE | Method for plasma processing |
| FR2949776B1 (fr) | 2009-09-10 | 2013-05-17 | Saint Gobain Performance Plast | Element en couches pour l'encapsulation d'un element sensible |
| FR2949775B1 (fr) | 2009-09-10 | 2013-08-09 | Saint Gobain Performance Plast | Substrat de protection pour dispositif collecteur ou emetteur de rayonnement |
| US8765232B2 (en) | 2011-01-10 | 2014-07-01 | Plasmasi, Inc. | Apparatus and method for dielectric deposition |
| KR101761834B1 (ko) | 2011-01-28 | 2017-07-27 | 서울바이오시스 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| WO2012129793A1 (zh) | 2011-03-30 | 2012-10-04 | 海洋王照明科技股份有限公司 | 衬底及其制备方法、以及使用该衬底的有机电致发光器件 |
| FR2973939A1 (fr) | 2011-04-08 | 2012-10-12 | Saint Gobain | Element en couches pour l’encapsulation d’un element sensible |
| TWI450650B (zh) | 2011-05-16 | 2014-08-21 | Ind Tech Res Inst | 可撓式基材及可撓式電子裝置 |
| CN102842683A (zh) * | 2011-06-21 | 2012-12-26 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制作方法 |
| JP5781393B2 (ja) * | 2011-08-05 | 2015-09-24 | 株式会社アルバック | 成膜方法 |
| TWI447955B (zh) | 2011-11-23 | 2014-08-01 | Ind Tech Res Inst | 發光二極體元件、其導光結構的形成方法與形成設備 |
| US9761830B1 (en) * | 2012-05-14 | 2017-09-12 | Eclipse Energy Systems, Inc. | Environmental protection film for thin film devices |
| US9299956B2 (en) | 2012-06-13 | 2016-03-29 | Aixtron, Inc. | Method for deposition of high-performance coatings and encapsulated electronic devices |
| US10526708B2 (en) | 2012-06-19 | 2020-01-07 | Aixtron Se | Methods for forming thin protective and optical layers on substrates |
| TWI477642B (zh) * | 2012-07-25 | 2015-03-21 | E Ink Holdings Inc | 阻氣基板 |
| US20140183498A1 (en) * | 2012-12-31 | 2014-07-03 | Saint-Gobain Performance Plastics Corporation | Thin Film Silicon Nitride Barrier Layers On Flexible Substrate |
| CN105720207B (zh) * | 2013-06-29 | 2017-09-15 | 艾克斯特朗欧洲公司 | 用于高性能涂层的沉积的方法以及封装的电子器件 |
| TWI514563B (zh) * | 2013-09-09 | 2015-12-21 | Innolux Corp | 電子裝置與軟性基板的製造方法 |
| CN104425735A (zh) * | 2013-09-09 | 2015-03-18 | 群创光电股份有限公司 | 电子装置 |
| TWM512870U (zh) | 2014-07-11 | 2015-11-21 | Ind Tech Res Inst | 基板結構及具有基板結構的電子裝置 |
| CN105449123B (zh) * | 2015-11-18 | 2018-03-06 | 上海大学 | 水氧阻隔层的制备方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110544A (en) * | 1997-06-26 | 2000-08-29 | General Electric Company | Protective coating by high rate arc plasma deposition |
| US6458512B1 (en) * | 1998-10-13 | 2002-10-01 | 3M Innovative Properties Company | Oxynitride encapsulated electroluminescent phosphor particles |
| US6268695B1 (en) * | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
| US6573652B1 (en) * | 1999-10-25 | 2003-06-03 | Battelle Memorial Institute | Encapsulated display devices |
| JP4556282B2 (ja) * | 2000-03-31 | 2010-10-06 | 株式会社デンソー | 有機ｅｌ素子およびその製造方法 |
| US6576351B2 (en) | 2001-02-16 | 2003-06-10 | Universal Display Corporation | Barrier region for optoelectronic devices |
| JP4147008B2 (ja) | 2001-03-05 | 2008-09-10 | 株式会社日立製作所 | 有機ｅｌ素子に用いるフィルム及び有機ｅｌ素子 |
| US6597111B2 (en) | 2001-11-27 | 2003-07-22 | Universal Display Corporation | Protected organic optoelectronic devices |
| US7265807B2 (en) * | 2001-12-13 | 2007-09-04 | Koninklijke Philips Electronics N.V. | Sealing structure for display devices |
| JP4101511B2 (ja) * | 2001-12-27 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| US7098069B2 (en) * | 2002-01-24 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
| JP2003297556A (ja) * | 2002-04-02 | 2003-10-17 | Dainippon Printing Co Ltd | 表示素子用基材、表示パネル、表示装置及び表示素子用基材の製造方法 |
| US7268486B2 (en) * | 2002-04-15 | 2007-09-11 | Schott Ag | Hermetic encapsulation of organic, electro-optical elements |
| US7015640B2 (en) * | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
-
2005
- 2005-02-16 WO PCT/CH2005/000088 patent/WO2005081333A2/en not_active Ceased
- 2005-02-16 CN CN2005800052876A patent/CN1977404B/zh not_active Expired - Fee Related
- 2005-02-16 EP EP05706511A patent/EP1719192A2/en not_active Withdrawn
- 2005-02-16 JP JP2006553410A patent/JP2007526601A/ja active Pending
- 2005-02-18 TW TW094104751A patent/TWI384583B/zh not_active IP Right Cessation
- 2005-02-18 US US11/061,143 patent/US7492091B2/en not_active Expired - Fee Related
-
2008
- 2008-12-09 US US12/330,903 patent/US20090087998A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2007526601A5 (enExample) | ||
| MX2012003610A (es) | Metodo de deposicion de pelicula delgada. | |
| WO2007106180A3 (en) | Photovoltaic contact and wiring formation | |
| WO2010054075A3 (en) | Plasma and thermal anneal treatment to improve oxidation resistance of metal-containing films | |
| JP2008511753A5 (enExample) | ||
| JP2010527514A5 (enExample) | ||
| WO2007045805A8 (fr) | Materiau anti-salissures et son procede d'obtention | |
| CN103619771A (zh) | 可回火和非可回火透明纳米复合材料层 | |
| WO2008008753A3 (en) | A method for fabricating a gate dielectric layer utilized in a gate structure | |
| WO2006107532A3 (en) | Single wafer thermal cvd processes for hemispherical grained silicon and nano-crystalline grain-sized polysilicon | |
| JP2009111350A5 (enExample) | ||
| CN110194448A (zh) | 一种石墨烯包覆的二维材料或石墨烯的制造方法 | |
| JP2010209465A5 (enExample) | ||
| JP5419868B2 (ja) | 複合フィルムおよびその製造方法 | |
| JP2011124528A5 (ja) | 抵抗メモリの製造方法 | |
| US8518534B2 (en) | Coating, article coated with coating, and method for manufacturing article | |
| JP2006523778A5 (enExample) | ||
| JP2014534143A5 (enExample) | ||
| JP2010001554A5 (ja) | 堆積物除去方法及び堆積膜形成方法 | |
| JP2006237371A5 (enExample) | ||
| JP2011187867A5 (enExample) | ||
| CN106045333A (zh) | 一种低辐射镀膜玻璃及其制备方法 | |
| JP2004288753A5 (enExample) | ||
| WO2009071810A3 (fr) | Substrat muni d'un empilement a proprietes thermiques | |
| JP2007258634A5 (enExample) |