TWI384583B - 擴散阻障層及製造擴散阻障層之方法 - Google Patents
擴散阻障層及製造擴散阻障層之方法 Download PDFInfo
- Publication number
- TWI384583B TWI384583B TW094104751A TW94104751A TWI384583B TW I384583 B TWI384583 B TW I384583B TW 094104751 A TW094104751 A TW 094104751A TW 94104751 A TW94104751 A TW 94104751A TW I384583 B TWI384583 B TW I384583B
- Authority
- TW
- Taiwan
- Prior art keywords
- diffusion barrier
- barrier layer
- substrate
- layers
- layer
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title claims description 39
- 238000009792 diffusion process Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 32
- 230000008569 process Effects 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 230000035699 permeability Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000003989 dielectric material Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 229920000307 polymer substrate Polymers 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims description 2
- -1 oxides Chemical class 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000005240 physical vapour deposition Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 107
- 238000005538 encapsulation Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 230000007547 defect Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000011575 calcium Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- MFHHXXRRFHXQJZ-UHFFFAOYSA-N NONON Chemical compound NONON MFHHXXRRFHXQJZ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000013086 organic photovoltaic Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000001464 adherent effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000013643 reference control Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
- Y10T428/325—Magnetic layer next to second metal compound-containing layer
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Laminated Bodies (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54627404P | 2004-02-20 | 2004-02-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200532846A TW200532846A (en) | 2005-10-01 |
| TWI384583B true TWI384583B (zh) | 2013-02-01 |
Family
ID=34886254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094104751A TWI384583B (zh) | 2004-02-20 | 2005-02-18 | 擴散阻障層及製造擴散阻障層之方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7492091B2 (enExample) |
| EP (1) | EP1719192A2 (enExample) |
| JP (1) | JP2007526601A (enExample) |
| CN (1) | CN1977404B (enExample) |
| TW (1) | TWI384583B (enExample) |
| WO (1) | WO2005081333A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9373817B2 (en) | 2014-07-11 | 2016-06-21 | Industrial Technology Research Institute | Substrate structure and device employing the same |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006033233A1 (ja) * | 2004-09-21 | 2006-03-30 | Konica Minolta Holdings, Inc. | 透明ガスバリア性フィルム |
| US7868903B2 (en) * | 2004-10-14 | 2011-01-11 | Daktronics, Inc. | Flexible pixel element fabrication and sealing method |
| US8344410B2 (en) | 2004-10-14 | 2013-01-01 | Daktronics, Inc. | Flexible pixel element and signal distribution means |
| US7893948B1 (en) | 2004-10-14 | 2011-02-22 | Daktronics, Inc. | Flexible pixel hardware and method |
| JP4869348B2 (ja) * | 2006-08-29 | 2012-02-08 | パイオニア株式会社 | ガスバリアフィルム及びその製造方法 |
| JP5253838B2 (ja) * | 2007-02-23 | 2013-07-31 | 三井化学東セロ株式会社 | 薄膜製造方法 |
| JP5164465B2 (ja) * | 2007-07-27 | 2013-03-21 | 株式会社アルバック | 樹脂基板 |
| JP5164464B2 (ja) * | 2007-07-27 | 2013-03-21 | 株式会社アルバック | 樹脂基板 |
| JP4729759B2 (ja) * | 2009-06-29 | 2011-07-20 | 富士電機株式会社 | 有機el素子用封止膜、有機el素子および有機elディスプレイ |
| WO2011006018A2 (en) | 2009-07-08 | 2011-01-13 | Plasmasi, Inc. | Apparatus and method for plasma processing |
| FR2949775B1 (fr) | 2009-09-10 | 2013-08-09 | Saint Gobain Performance Plast | Substrat de protection pour dispositif collecteur ou emetteur de rayonnement |
| FR2949776B1 (fr) | 2009-09-10 | 2013-05-17 | Saint Gobain Performance Plast | Element en couches pour l'encapsulation d'un element sensible |
| US8765232B2 (en) | 2011-01-10 | 2014-07-01 | Plasmasi, Inc. | Apparatus and method for dielectric deposition |
| KR101761834B1 (ko) | 2011-01-28 | 2017-07-27 | 서울바이오시스 주식회사 | 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법 |
| WO2012129793A1 (zh) * | 2011-03-30 | 2012-10-04 | 海洋王照明科技股份有限公司 | 衬底及其制备方法、以及使用该衬底的有机电致发光器件 |
| FR2973939A1 (fr) * | 2011-04-08 | 2012-10-12 | Saint Gobain | Element en couches pour l’encapsulation d’un element sensible |
| TWI450650B (zh) | 2011-05-16 | 2014-08-21 | Ind Tech Res Inst | 可撓式基材及可撓式電子裝置 |
| CN102842683A (zh) * | 2011-06-21 | 2012-12-26 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制作方法 |
| JP5781393B2 (ja) * | 2011-08-05 | 2015-09-24 | 株式会社アルバック | 成膜方法 |
| TWI447955B (zh) | 2011-11-23 | 2014-08-01 | Ind Tech Res Inst | 發光二極體元件、其導光結構的形成方法與形成設備 |
| US9761830B1 (en) * | 2012-05-14 | 2017-09-12 | Eclipse Energy Systems, Inc. | Environmental protection film for thin film devices |
| US9299956B2 (en) | 2012-06-13 | 2016-03-29 | Aixtron, Inc. | Method for deposition of high-performance coatings and encapsulated electronic devices |
| US10526708B2 (en) | 2012-06-19 | 2020-01-07 | Aixtron Se | Methods for forming thin protective and optical layers on substrates |
| TWI477642B (zh) * | 2012-07-25 | 2015-03-21 | E Ink Holdings Inc | 阻氣基板 |
| KR101892433B1 (ko) * | 2012-12-31 | 2018-08-30 | 생-고뱅 퍼포먼스 플라스틱스 코포레이션 | 유연성 기재 상의 박막 규소질화물 장벽 층들 |
| US9831466B2 (en) * | 2013-06-29 | 2017-11-28 | Aixtron Se | Method for depositing a multi-layer moisture barrier on electronic devices and electronic devices protected by a multi-layer moisture barrier |
| TWI514563B (zh) * | 2013-09-09 | 2015-12-21 | Innolux Corp | 電子裝置與軟性基板的製造方法 |
| CN104425735A (zh) * | 2013-09-09 | 2015-03-18 | 群创光电股份有限公司 | 电子装置 |
| CN105449123B (zh) * | 2015-11-18 | 2018-03-06 | 上海大学 | 水氧阻隔层的制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030104753A1 (en) * | 1999-10-25 | 2003-06-05 | Graff Gordon Lee | Method of making encapsulated display devices |
| WO2003050894A2 (en) * | 2001-12-13 | 2003-06-19 | Koninklijke Philips Electronics N.V. | Sealing structure for display devices |
| US20030127651A1 (en) * | 2001-12-27 | 2003-07-10 | Satoshi Murakami | Light emitting device and method of manufacturing the same |
| US20030129298A1 (en) * | 2000-03-31 | 2003-07-10 | Ryonosuke Tera | Method for manufacturing organic EL device with protective layer |
| US20030183830A1 (en) * | 2002-01-24 | 2003-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
| US20030193286A1 (en) * | 2002-04-15 | 2003-10-16 | Clemens Ottermann | Hermetic encapsulation of organic, electro-optical elements |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6110544A (en) * | 1997-06-26 | 2000-08-29 | General Electric Company | Protective coating by high rate arc plasma deposition |
| US6458512B1 (en) * | 1998-10-13 | 2002-10-01 | 3M Innovative Properties Company | Oxynitride encapsulated electroluminescent phosphor particles |
| US6268695B1 (en) | 1998-12-16 | 2001-07-31 | Battelle Memorial Institute | Environmental barrier material for organic light emitting device and method of making |
| US6576351B2 (en) | 2001-02-16 | 2003-06-10 | Universal Display Corporation | Barrier region for optoelectronic devices |
| JP4147008B2 (ja) | 2001-03-05 | 2008-09-10 | 株式会社日立製作所 | 有機el素子に用いるフィルム及び有機el素子 |
| US6597111B2 (en) | 2001-11-27 | 2003-07-22 | Universal Display Corporation | Protected organic optoelectronic devices |
| JP2003297556A (ja) * | 2002-04-02 | 2003-10-17 | Dainippon Printing Co Ltd | 表示素子用基材、表示パネル、表示装置及び表示素子用基材の製造方法 |
| US7015640B2 (en) * | 2002-09-11 | 2006-03-21 | General Electric Company | Diffusion barrier coatings having graded compositions and devices incorporating the same |
-
2005
- 2005-02-16 EP EP05706511A patent/EP1719192A2/en not_active Withdrawn
- 2005-02-16 CN CN2005800052876A patent/CN1977404B/zh not_active Expired - Fee Related
- 2005-02-16 WO PCT/CH2005/000088 patent/WO2005081333A2/en not_active Ceased
- 2005-02-16 JP JP2006553410A patent/JP2007526601A/ja active Pending
- 2005-02-18 US US11/061,143 patent/US7492091B2/en not_active Expired - Fee Related
- 2005-02-18 TW TW094104751A patent/TWI384583B/zh not_active IP Right Cessation
-
2008
- 2008-12-09 US US12/330,903 patent/US20090087998A1/en not_active Abandoned
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030104753A1 (en) * | 1999-10-25 | 2003-06-05 | Graff Gordon Lee | Method of making encapsulated display devices |
| US20030129298A1 (en) * | 2000-03-31 | 2003-07-10 | Ryonosuke Tera | Method for manufacturing organic EL device with protective layer |
| CN1426605A (zh) * | 2000-04-20 | 2003-06-25 | 巴特勒记忆研究所 | 封装的显示装置 |
| WO2003050894A2 (en) * | 2001-12-13 | 2003-06-19 | Koninklijke Philips Electronics N.V. | Sealing structure for display devices |
| US20030127651A1 (en) * | 2001-12-27 | 2003-07-10 | Satoshi Murakami | Light emitting device and method of manufacturing the same |
| US20030183830A1 (en) * | 2002-01-24 | 2003-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of preparing the same and device for fabricating the same |
| US20030193286A1 (en) * | 2002-04-15 | 2003-10-16 | Clemens Ottermann | Hermetic encapsulation of organic, electro-optical elements |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9373817B2 (en) | 2014-07-11 | 2016-06-21 | Industrial Technology Research Institute | Substrate structure and device employing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US7492091B2 (en) | 2009-02-17 |
| WO2005081333A3 (en) | 2006-01-05 |
| CN1977404B (zh) | 2010-05-12 |
| EP1719192A2 (en) | 2006-11-08 |
| WO2005081333A2 (en) | 2005-09-01 |
| CN1977404A (zh) | 2007-06-06 |
| JP2007526601A (ja) | 2007-09-13 |
| TW200532846A (en) | 2005-10-01 |
| US20090087998A1 (en) | 2009-04-02 |
| US20050194898A1 (en) | 2005-09-08 |
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