JP2003173970A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2003173970A5 JP2003173970A5 JP2002201265A JP2002201265A JP2003173970A5 JP 2003173970 A5 JP2003173970 A5 JP 2003173970A5 JP 2002201265 A JP2002201265 A JP 2002201265A JP 2002201265 A JP2002201265 A JP 2002201265A JP 2003173970 A5 JP2003173970 A5 JP 2003173970A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor film
- manufacturing
- rare gas
- amorphous structure
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 16
- 239000007789 gas Substances 0.000 claims 15
- 238000004519 manufacturing process Methods 0.000 claims 15
- 238000000034 method Methods 0.000 claims 13
- 229910052757 nitrogen Inorganic materials 0.000 claims 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 230000008021 deposition Effects 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 229910052786 argon Inorganic materials 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- 229910052743 krypton Inorganic materials 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- 229910052756 noble gas Inorganic materials 0.000 claims 2
- 229910052724 xenon Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002201265A JP4212844B2 (ja) | 2001-07-10 | 2002-07-10 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001209239 | 2001-07-10 | ||
| JP2001-209239 | 2001-07-10 | ||
| JP2001-295341 | 2001-09-27 | ||
| JP2001295341 | 2001-09-27 | ||
| JP2002201265A JP4212844B2 (ja) | 2001-07-10 | 2002-07-10 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003173970A JP2003173970A (ja) | 2003-06-20 |
| JP2003173970A5 true JP2003173970A5 (enExample) | 2005-10-13 |
| JP4212844B2 JP4212844B2 (ja) | 2009-01-21 |
Family
ID=27347125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002201265A Expired - Fee Related JP4212844B2 (ja) | 2001-07-10 | 2002-07-10 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4212844B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2012172617A1 (ja) * | 2011-06-17 | 2015-02-23 | パナソニック株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| WO2012172617A1 (ja) | 2011-06-17 | 2012-12-20 | パナソニック株式会社 | 薄膜トランジスタ及び薄膜トランジスタの製造方法 |
| JP5955658B2 (ja) | 2012-06-15 | 2016-07-20 | 株式会社Screenホールディングス | 熱処理方法および熱処理装置 |
| JP5739048B2 (ja) * | 2013-09-30 | 2015-06-24 | 積水フィルム株式会社 | 農業用多層フィルム |
-
2002
- 2002-07-10 JP JP2002201265A patent/JP4212844B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12068156B2 (en) | Selective deposition of SiOC thin films | |
| JP6355561B2 (ja) | 化学蒸着による高品質の単層および多層グラフェンの大規模な製造 | |
| JP3817621B2 (ja) | プラズマ原子層蒸着法を利用したタンタル酸化膜形成方法 | |
| TWI278023B (en) | Method for forming a high density dielectric film by chemical vapor deposition | |
| JP5339281B2 (ja) | 配向カーボンナノチューブの製造装置 | |
| KR970063763A (ko) | 반도체 박막, 반도체 장치 및 이의 제조 방법 | |
| JP2006516809A (ja) | Ta2O5含有層形成方法 | |
| JP2002285333A5 (enExample) | ||
| JP2001032071A (ja) | 熱化学気相蒸着装置及びこれを用いたカーボンナノチューブの低温合成方法 | |
| JP2008538129A5 (enExample) | ||
| KR20160044977A (ko) | 비정질 탄소원자층의 형성방법 및 비정질 탄소원자층을 포함하는 전자소자 | |
| CN105274500A (zh) | 等离子体增强化学气相沉积制备石墨烯的方法 | |
| JP2002313811A5 (enExample) | ||
| Zhang et al. | Effect of hydrogen in size-limited growth of graphene by atmospheric pressure chemical vapor deposition | |
| JP2003173969A5 (enExample) | ||
| KR101916517B1 (ko) | 그래핀 제조방법 | |
| JP4861448B2 (ja) | ニッケルシリサイドナノワイヤの製造方法 | |
| JP2005203569A5 (enExample) | ||
| JP2004277864A (ja) | 成膜方法及び成膜装置 | |
| JP2004111928A5 (enExample) | ||
| JPWO2009104789A1 (ja) | 抵抗変化素子の製造法 | |
| JP2003332342A5 (enExample) | ||
| WO2006054393A1 (ja) | 薄膜製造方法及び薄膜製造装置 | |
| JP2005203638A5 (enExample) | ||
| JP2015147706A (ja) | プラスチック廃棄物等を原料として用いる単結晶グラフェンの製造方法、および単結晶グラフェンを用いたタッチパネル |