JP2003115458A5 - - Google Patents

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Publication number
JP2003115458A5
JP2003115458A5 JP2002156736A JP2002156736A JP2003115458A5 JP 2003115458 A5 JP2003115458 A5 JP 2003115458A5 JP 2002156736 A JP2002156736 A JP 2002156736A JP 2002156736 A JP2002156736 A JP 2002156736A JP 2003115458 A5 JP2003115458 A5 JP 2003115458A5
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JP
Japan
Prior art keywords
semiconductor film
manufacturing
semiconductor
semiconductor device
amorphous structure
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Application number
JP2002156736A
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English (en)
Japanese (ja)
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JP2003115458A (ja
JP4141741B2 (ja
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Priority to JP2002156736A priority Critical patent/JP4141741B2/ja
Priority claimed from JP2002156736A external-priority patent/JP4141741B2/ja
Publication of JP2003115458A publication Critical patent/JP2003115458A/ja
Publication of JP2003115458A5 publication Critical patent/JP2003115458A5/ja
Application granted granted Critical
Publication of JP4141741B2 publication Critical patent/JP4141741B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2002156736A 2001-06-01 2002-05-30 半導体装置の作製方法 Expired - Lifetime JP4141741B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002156736A JP4141741B2 (ja) 2001-06-01 2002-05-30 半導体装置の作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001167481 2001-06-01
JP2001-167481 2001-06-01
JP2001-230469 2001-06-30
JP2001230469 2001-07-30
JP2002156736A JP4141741B2 (ja) 2001-06-01 2002-05-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2003115458A JP2003115458A (ja) 2003-04-18
JP2003115458A5 true JP2003115458A5 (enExample) 2005-10-13
JP4141741B2 JP4141741B2 (ja) 2008-08-27

Family

ID=27346863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002156736A Expired - Lifetime JP4141741B2 (ja) 2001-06-01 2002-05-30 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4141741B2 (enExample)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114184B2 (ja) * 1987-07-27 1995-12-06 日本電信電話株式会社 薄膜形シリコン半導体装置およびその製造方法
JP2649325B2 (ja) * 1993-07-30 1997-09-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3910229B2 (ja) * 1996-01-26 2007-04-25 株式会社半導体エネルギー研究所 半導体薄膜の作製方法
JP2000252212A (ja) * 1998-12-29 2000-09-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法

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