JP2002519864A5 - - Google Patents

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Publication number
JP2002519864A5
JP2002519864A5 JP2000557493A JP2000557493A JP2002519864A5 JP 2002519864 A5 JP2002519864 A5 JP 2002519864A5 JP 2000557493 A JP2000557493 A JP 2000557493A JP 2000557493 A JP2000557493 A JP 2000557493A JP 2002519864 A5 JP2002519864 A5 JP 2002519864A5
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JP
Japan
Prior art keywords
carrier gas
gas mixture
flowing
reactive gas
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000557493A
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English (en)
Japanese (ja)
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JP2002519864A (ja
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Publication date
Priority claimed from US09/128,249 external-priority patent/US6541375B1/en
Application filed filed Critical
Publication of JP2002519864A publication Critical patent/JP2002519864A/ja
Publication of JP2002519864A5 publication Critical patent/JP2002519864A5/ja
Withdrawn legal-status Critical Current

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JP2000557493A 1998-06-30 1999-06-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス Withdrawn JP2002519864A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9132998P 1998-06-30 1998-06-30
US60/091,329 1998-06-30
US09/128,249 US6541375B1 (en) 1998-06-30 1998-08-03 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
US09/128,249 1998-08-03
PCT/JP1999/003466 WO2000001000A1 (en) 1998-06-30 1999-06-28 Dc sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005133712A Division JP2005311385A (ja) 1998-06-30 2005-04-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス

Publications (2)

Publication Number Publication Date
JP2002519864A JP2002519864A (ja) 2002-07-02
JP2002519864A5 true JP2002519864A5 (enExample) 2005-12-22

Family

ID=26783855

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000557493A Withdrawn JP2002519864A (ja) 1998-06-30 1999-06-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス
JP2005133712A Pending JP2005311385A (ja) 1998-06-30 2005-04-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2005133712A Pending JP2005311385A (ja) 1998-06-30 2005-04-28 平滑電極および向上されたメモリ保持性を有する薄膜強誘電体キャパシタを製造するためのｄｃスパッタリングプロセス

Country Status (7)

Country Link
US (1) US6541375B1 (enExample)
EP (1) EP1099242A1 (enExample)
JP (2) JP2002519864A (enExample)
KR (1) KR100419683B1 (enExample)
CN (1) CN1184666C (enExample)
TW (1) TW449794B (enExample)
WO (1) WO2000001000A1 (enExample)

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US8644000B2 (en) * 2011-09-13 2014-02-04 Fatih Dogan Nanostructured dielectric materials for high energy density multilayer ceramic capacitors
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CN111557049B (zh) * 2020-03-31 2021-11-23 长江存储科技有限责任公司 三维存储设备及其形成方法
CN111931385B (zh) * 2020-09-15 2024-12-13 国网四川省电力公司电力科学研究院 一种温度对电介质累积效应影响的试验评估方法
US12255225B2 (en) * 2020-09-25 2025-03-18 Intel Corporation Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes
CN114229968B (zh) * 2021-11-22 2023-03-14 清华大学 电芬顿装置和处理污染物的方法
CN114203905A (zh) * 2021-12-09 2022-03-18 北京超弦存储器研究院 一种铁电器件的制造方法

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