KR100419683B1 - 평활 전극 및 향상된 메모리 유지 특성을 가지는 박막 강유전성 커패시터를 제작하는 ｄｃ 스퍼터링 공정 - Google Patents

평활 전극 및 향상된 메모리 유지 특성을 가지는 박막 강유전성 커패시터를 제작하는 ｄｃ 스퍼터링 공정 Download PDF

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Publication number
KR100419683B1
KR100419683B1 KR10-2000-7015122A KR20007015122A KR100419683B1 KR 100419683 B1 KR100419683 B1 KR 100419683B1 KR 20007015122 A KR20007015122 A KR 20007015122A KR 100419683 B1 KR100419683 B1 KR 100419683B1
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South Korea
Prior art keywords
carrier gas
gas mixture
ferroelectric
sputtering
oxygen
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Expired - Fee Related
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KR10-2000-7015122A
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English (en)
Korean (ko)
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KR20010103555A (ko
Inventor
하야시시니치로
아리타코지
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마츠시타 덴끼 산교 가부시키가이샤
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR10-2000-7015122A 1998-06-30 1999-06-28 평활 전극 및 향상된 메모리 유지 특성을 가지는 박막 강유전성 커패시터를 제작하는 ｄｃ 스퍼터링 공정 Expired - Fee Related KR100419683B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US9132998P 1998-06-30 1998-06-30
US60091329 1998-06-30
US60/091,329 1998-08-03
US09/128,249 US6541375B1 (en) 1998-06-30 1998-08-03 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention
US09/128,249 1998-08-03

Publications (2)

Publication Number Publication Date
KR20010103555A KR20010103555A (ko) 2001-11-23
KR100419683B1 true KR100419683B1 (ko) 2004-02-21

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KR10-2000-7015122A Expired - Fee Related KR100419683B1 (ko) 1998-06-30 1999-06-28 평활 전극 및 향상된 메모리 유지 특성을 가지는 박막 강유전성 커패시터를 제작하는 ｄｃ 스퍼터링 공정

Country Status (7)

Country Link
US (1) US6541375B1 (enExample)
EP (1) EP1099242A1 (enExample)
JP (2) JP2002519864A (enExample)
KR (1) KR100419683B1 (enExample)
CN (1) CN1184666C (enExample)
TW (1) TW449794B (enExample)
WO (1) WO2000001000A1 (enExample)

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US8644000B2 (en) * 2011-09-13 2014-02-04 Fatih Dogan Nanostructured dielectric materials for high energy density multilayer ceramic capacitors
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CN111557049B (zh) 2020-03-31 2021-11-23 长江存储科技有限责任公司 三维存储设备及其形成方法
CN111931385B (zh) * 2020-09-15 2024-12-13 国网四川省电力公司电力科学研究院 一种温度对电介质累积效应影响的试验评估方法
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Also Published As

Publication number Publication date
US6541375B1 (en) 2003-04-01
EP1099242A1 (en) 2001-05-16
CN1309814A (zh) 2001-08-22
CN1184666C (zh) 2005-01-12
WO2000001000A1 (en) 2000-01-06
KR20010103555A (ko) 2001-11-23
JP2005311385A (ja) 2005-11-04
TW449794B (en) 2001-08-11
JP2002519864A (ja) 2002-07-02

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