TW449794B - DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention - Google Patents
DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention Download PDFInfo
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- TW449794B TW449794B TW088110893A TW88110893A TW449794B TW 449794 B TW449794 B TW 449794B TW 088110893 A TW088110893 A TW 088110893A TW 88110893 A TW88110893 A TW 88110893A TW 449794 B TW449794 B TW 449794B
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Semiconductor Memories (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9132998P | 1998-06-30 | 1998-06-30 | |
| US09/128,249 US6541375B1 (en) | 1998-06-30 | 1998-08-03 | DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW449794B true TW449794B (en) | 2001-08-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088110893A TW449794B (en) | 1998-06-30 | 1999-06-28 | DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6541375B1 (enExample) |
| EP (1) | EP1099242A1 (enExample) |
| JP (2) | JP2002519864A (enExample) |
| KR (1) | KR100419683B1 (enExample) |
| CN (1) | CN1184666C (enExample) |
| TW (1) | TW449794B (enExample) |
| WO (1) | WO2000001000A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI668689B (zh) * | 2017-02-24 | 2019-08-11 | 美商美光科技公司 | 用於鐵電記憶體之自我參考 |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6104049A (en) * | 1997-03-03 | 2000-08-15 | Symetrix Corporation | Ferroelectric memory with ferroelectric thin film having thickness of 90 nanometers or less, and method of making same |
| US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
| JP3608459B2 (ja) * | 1999-12-28 | 2005-01-12 | 株式会社村田製作所 | 薄膜積層体、強誘電体薄膜素子およびそれらの製造方法 |
| KR100316027B1 (ko) * | 1999-12-28 | 2001-12-20 | 박종섭 | 반도체 소자의 전하저장 전극 형성방법 |
| WO2001088969A2 (en) * | 2000-05-16 | 2001-11-22 | Applied Materials, Inc. | Improved capacitor electrodes |
| US6887716B2 (en) * | 2000-12-20 | 2005-05-03 | Fujitsu Limited | Process for producing high quality PZT films for ferroelectric memory integrated circuits |
| US7084080B2 (en) * | 2001-03-30 | 2006-08-01 | Advanced Technology Materials, Inc. | Silicon source reagent compositions, and method of making and using same for microelectronic device structure |
| JP3661850B2 (ja) | 2001-04-25 | 2005-06-22 | 富士通株式会社 | 半導体装置およびその製造方法 |
| US6781179B2 (en) * | 2001-05-30 | 2004-08-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having a capacitor comprising an electrode with an iridium oxide film as an oxygen barrier film |
| JP3971598B2 (ja) * | 2001-11-01 | 2007-09-05 | 富士通株式会社 | 強誘電体キャパシタおよび半導体装置 |
| US6815223B2 (en) * | 2002-11-22 | 2004-11-09 | Symetrix Corporation | Low thermal budget fabrication of ferroelectric memory using RTP |
| JP4657545B2 (ja) * | 2001-12-28 | 2011-03-23 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
| US6807080B2 (en) * | 2002-05-17 | 2004-10-19 | Agilent Technologies, Inc. | Enhanced storage states in an memory |
| NO322192B1 (no) * | 2002-06-18 | 2006-08-28 | Thin Film Electronics Asa | Fremgangsmate til fremstilling av elektrodelag av ferroelektriske minneceller i en ferroelektrisk minneinnretning, samt ferroelektrisk minneinnretning |
| KR100470166B1 (ko) | 2002-07-19 | 2005-02-07 | 주식회사 하이닉스반도체 | 강유전체 메모리 소자의 제조 방법 |
| JP3894554B2 (ja) * | 2002-08-07 | 2007-03-22 | 松下電器産業株式会社 | 容量素子及びその製造方法 |
| US6911361B2 (en) * | 2003-03-10 | 2005-06-28 | Sharp Laboratories Of America, Inc. | Low temperature processing of PCMO thin film on Ir substrate for RRAM application |
| WO2004086476A1 (ja) * | 2003-03-25 | 2004-10-07 | Fujitsu Limited | 半導体装置の製造装置及び製造方法 |
| US6830938B1 (en) | 2003-06-24 | 2004-12-14 | Texas Instruments Incorporated | Method for improving retention reliability of ferroelectric RAM |
| US7196924B2 (en) * | 2004-04-06 | 2007-03-27 | Macronix International Co., Ltd. | Method of multi-level cell FeRAM |
| JP4794227B2 (ja) * | 2004-07-15 | 2011-10-19 | 日本碍子株式会社 | 電子放出素子 |
| US7085150B2 (en) * | 2004-12-20 | 2006-08-01 | Texas Instruments Incorporated | Methods for enhancing performance of ferroelectic memory with polarization treatment |
| US7149137B2 (en) * | 2004-12-30 | 2006-12-12 | Texas Instruments Incorporated | Process monitoring for ferroelectric memory devices with in-line retention test |
| US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
| US7833904B2 (en) * | 2005-06-16 | 2010-11-16 | The Trustees Of Columbia University In The City Of New York | Methods for fabricating nanoscale electrodes and uses thereof |
| DE102006026672A1 (de) * | 2006-06-02 | 2007-12-06 | Würth Solar Gmbh & Co. Kg | Sputterabscheidung von Molybdänschichten |
| KR100881717B1 (ko) * | 2006-12-27 | 2009-02-06 | 주식회사 하이닉스반도체 | 캐패시터 및 그 제조 방법 |
| US8298909B2 (en) | 2006-12-27 | 2012-10-30 | Hynix Semiconductor Inc. | Semiconductor device and method for fabricating the same |
| US7750173B2 (en) * | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
| CN101636836B (zh) * | 2007-03-20 | 2011-03-30 | 富士通半导体股份有限公司 | 半导体装置及其制造方法 |
| TWI396763B (zh) * | 2007-06-01 | 2013-05-21 | Hon Hai Prec Ind Co Ltd | 濺鍍式鍍膜承載台及鍍膜機台 |
| KR100869343B1 (ko) | 2007-08-31 | 2008-11-19 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 제조 방법 |
| US7936597B2 (en) * | 2008-03-25 | 2011-05-03 | Seagate Technology Llc | Multilevel magnetic storage device |
| US8098520B2 (en) * | 2008-04-25 | 2012-01-17 | Seagate Technology Llc | Storage device including a memory cell having multiple memory layers |
| KR101397789B1 (ko) * | 2010-07-14 | 2014-05-20 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | 아몰퍼스 도전성 산화물막을 형성하기 위한 전구체 조성물 및 방법 |
| US8644000B2 (en) * | 2011-09-13 | 2014-02-04 | Fatih Dogan | Nanostructured dielectric materials for high energy density multilayer ceramic capacitors |
| US9450042B2 (en) * | 2012-08-06 | 2016-09-20 | GlobalFoundries, Inc. | Integrated circuits with metal-insulator-metal (MIM) capacitors and methods for fabricating same |
| JP2018110179A (ja) * | 2016-12-31 | 2018-07-12 | 株式会社Flosfia | 正孔輸送層形成用組成物 |
| CN111557049B (zh) | 2020-03-31 | 2021-11-23 | 长江存储科技有限责任公司 | 三维存储设备及其形成方法 |
| CN111931385B (zh) * | 2020-09-15 | 2024-12-13 | 国网四川省电力公司电力科学研究院 | 一种温度对电介质累积效应影响的试验评估方法 |
| US12255225B2 (en) * | 2020-09-25 | 2025-03-18 | Intel Corporation | Low leakage thin film capacitors using titanium oxide dielectric with conducting noble metal oxide electrodes |
| CN114229968B (zh) * | 2021-11-22 | 2023-03-14 | 清华大学 | 电芬顿装置和处理污染物的方法 |
| CN114203905A (zh) * | 2021-12-09 | 2022-03-18 | 北京超弦存储器研究院 | 一种铁电器件的制造方法 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3002194A1 (de) * | 1980-01-22 | 1981-07-23 | Berna AG Olten, Olten | Vorrichtung zur (teil) beschichtung eines substrates durch kathodenzerstaeubung, vefahren zur beschichtung und deren anwendung |
| CA1250155A (en) * | 1984-07-31 | 1989-02-21 | James A. Ruf | Platinum resistance thermometer |
| DE3716852C1 (de) * | 1987-05-20 | 1988-07-14 | Demetron | Sputtertarget zur Erzeugung optisch transparenter Schichten und Verfahren zur Herstellung dieser Targets |
| US5519234A (en) | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
| US5322716A (en) * | 1989-07-04 | 1994-06-21 | Matsushita Electric Industrial Co., Ltd. | Method for producing magnetic recording medium |
| DE69014027T2 (de) | 1989-08-30 | 1995-06-01 | Nippon Electric Co | Dünnfilmkondensatoren und deren Herstellungsverfahren. |
| US5434102A (en) * | 1991-02-25 | 1995-07-18 | Symetrix Corporation | Process for fabricating layered superlattice materials and making electronic devices including same |
| JP3125425B2 (ja) | 1992-03-05 | 2001-01-15 | 日本電気株式会社 | 薄膜コンデンサとその製造方法 |
| US5254217A (en) | 1992-07-27 | 1993-10-19 | Motorola, Inc. | Method for fabricating a semiconductor device having a conductive metal oxide |
| JPH07122661A (ja) | 1993-10-27 | 1995-05-12 | Olympus Optical Co Ltd | 強誘電体メモリ装置 |
| US5539279A (en) | 1993-06-23 | 1996-07-23 | Hitachi, Ltd. | Ferroelectric memory |
| US5510173A (en) * | 1993-08-20 | 1996-04-23 | Southwall Technologies Inc. | Multiple layer thin films with improved corrosion resistance |
| KR0171060B1 (ko) * | 1993-12-28 | 1999-03-30 | 스기야마 카즈히코 | 반도체장치의 제조방법 |
| JP3570692B2 (ja) | 1994-01-18 | 2004-09-29 | ローム株式会社 | 不揮発性メモリ |
| JPH07326783A (ja) * | 1994-05-30 | 1995-12-12 | Canon Inc | 光起電力素子の形成方法及びそれに用いる薄膜製造装置 |
| US5478610A (en) * | 1994-09-02 | 1995-12-26 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
| JPH0897380A (ja) * | 1994-09-21 | 1996-04-12 | Sharp Corp | 誘電体キャパシタ及びその製造方法 |
| US5728603A (en) * | 1994-11-28 | 1998-03-17 | Northern Telecom Limited | Method of forming a crystalline ferroelectric dielectric material for an integrated circuit |
| KR0155785B1 (ko) | 1994-12-15 | 1998-10-15 | 김광호 | 핀형 커패시터 및 그 제조방법 |
| JPH08203266A (ja) | 1995-01-27 | 1996-08-09 | Nec Corp | 強誘電体メモリ装置 |
| KR100416733B1 (ko) | 1995-03-20 | 2004-07-05 | 삼성전자주식회사 | 강유전성캐패시터 |
| WO1996029725A1 (en) * | 1995-03-21 | 1996-09-26 | Northern Telecom Limited | Ferroelectric dielectric for integrated circuit applications at microwave frequencies |
| US5592410A (en) | 1995-04-10 | 1997-01-07 | Ramtron International Corporation | Circuit and method for reducing a compensation of a ferroelectric capacitor by multiple pulsing of the plate line following a write operation |
| US5708302A (en) * | 1995-04-26 | 1998-01-13 | Symetrix Corporation | Bottom electrode structure for dielectric capacitors |
| US5753945A (en) * | 1995-06-29 | 1998-05-19 | Northern Telecom Limited | Integrated circuit structure comprising a zirconium titanium oxide barrier layer and method of forming a zirconium titanium oxide barrier layer |
| JPH0945872A (ja) * | 1995-07-28 | 1997-02-14 | Olympus Optical Co Ltd | 誘電体薄膜素子 |
| JPH0951079A (ja) * | 1995-08-08 | 1997-02-18 | Oki Electric Ind Co Ltd | 半導体素子およびその製造方法 |
| JP3417167B2 (ja) | 1995-09-29 | 2003-06-16 | ソニー株式会社 | 半導体メモリ素子のキャパシタ構造及びその形成方法 |
| JPH09102590A (ja) * | 1995-10-05 | 1997-04-15 | Ricoh Co Ltd | 薄膜キャパシタ |
| US5838605A (en) * | 1996-03-20 | 1998-11-17 | Ramtron International Corporation | Iridium oxide local interconnect |
| US5835314A (en) * | 1996-04-17 | 1998-11-10 | Massachusetts Institute Of Technology | Tunnel junction device for storage and switching of signals |
| JP3604524B2 (ja) * | 1997-01-07 | 2004-12-22 | 東芝マイクロエレクトロニクス株式会社 | 不揮発性強誘電体メモリ |
| US6498097B1 (en) | 1997-05-06 | 2002-12-24 | Tong Yang Cement Corporation | Apparatus and method of forming preferred orientation-controlled platinum film using oxygen |
-
1998
- 1998-08-03 US US09/128,249 patent/US6541375B1/en not_active Expired - Fee Related
-
1999
- 1999-06-28 JP JP2000557493A patent/JP2002519864A/ja not_active Withdrawn
- 1999-06-28 TW TW088110893A patent/TW449794B/zh not_active IP Right Cessation
- 1999-06-28 CN CNB99808073XA patent/CN1184666C/zh not_active Expired - Fee Related
- 1999-06-28 KR KR10-2000-7015122A patent/KR100419683B1/ko not_active Expired - Fee Related
- 1999-06-28 EP EP99957658A patent/EP1099242A1/en not_active Withdrawn
- 1999-06-28 WO PCT/JP1999/003466 patent/WO2000001000A1/en not_active Ceased
-
2005
- 2005-04-28 JP JP2005133712A patent/JP2005311385A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI668689B (zh) * | 2017-02-24 | 2019-08-11 | 美商美光科技公司 | 用於鐵電記憶體之自我參考 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002519864A (ja) | 2002-07-02 |
| EP1099242A1 (en) | 2001-05-16 |
| WO2000001000A1 (en) | 2000-01-06 |
| US6541375B1 (en) | 2003-04-01 |
| JP2005311385A (ja) | 2005-11-04 |
| KR20010103555A (ko) | 2001-11-23 |
| CN1309814A (zh) | 2001-08-22 |
| CN1184666C (zh) | 2005-01-12 |
| KR100419683B1 (ko) | 2004-02-21 |
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