JP2003115458A5 - - Google Patents

Claims (12)

A rare gas element is introduced into the film formation chamber at a film formation pressure of 0.1 Pa to 5 Pa, and a rare gas element is converted to 1 × 10 ¹⁹ / cm ³ to 1 × 10 by a sputtering method in which a glow discharge is generated by applying an alternating electric field. ^A method for manufacturing a semiconductor film having an amorphous structure, wherein a semiconductor film having a concentration of ²² / cm ³ and having an amorphous structure is formed over a surface. The method for manufacturing a semiconductor film having an amorphous structure according to claim 1, wherein an RF power density for generating the glow discharge is 0.137 W / cm ^{2 to} 6.847 W / cm ² . 3. The method for manufacturing a semiconductor film having an amorphous structure according to claim 1, wherein the semiconductor film is formed at a temperature of the surface to be room temperature or 300 ° C. or lower. In any one of claims 1 to 3, wherein the noble gas, a semiconductor film having He, Ne, Ar, Kr, an amorphous structure, which is a one or more selected from Xe Manufacturing method.   5. The compressive stress of the semiconductor film according to claim 1 is −10.0 × 10 6. ^Ten dynes / cm ² ~ -5.0 × 10 ⁹ dynes / cm ² A method for manufacturing a semiconductor film, wherein Forming a first semiconductor film having an amorphous structure on the insulating surface,
Adding a metal element to the first semiconductor film having the amorphous structure;
The first semiconductor film to form a first semiconductor film having a crystal structure is crystallized,
Forming a barrier layer on the surface of the first semiconductor film having the crystal structure;
A second semiconductor film containing a rare gas element by sputtering is formed on the barrier layer,
By the heat treatment, by moving the metal element in the second semiconductor film, the metal element in the first semiconductor film removal or reduction with a crystal structure,
The method for manufacturing a semiconductor device comprising the Turkey to remove the second semiconductor film. 7. The second semiconductor film according to claim 6 , wherein a rare gas is introduced into the deposition chamber at a deposition pressure of 0.1 Pa to 5 Pa and an RF power density of 0.137 W / cm ^{2 to} 6.847 W / cm ^2. A method for manufacturing a semiconductor device, characterized by forming by a sputtering method that generates glow discharge. 8. The method for manufacturing a semiconductor device according to claim 7 , wherein the rare gas is one or more selected from He, Ne, Ar, Kr, and Xe. 9. The semiconductor device according to claim 6, wherein the second semiconductor film is 1 × 10 6. ¹⁹ / Cm ^Three ~ 1x10 ^{twenty two} / Cm ^Three A method for manufacturing a semiconductor device, comprising the rare gas element at a concentration of 2 to 10. 10. The method for manufacturing a semiconductor device according to claim 6, wherein the second semiconductor film is formed by setting a temperature of the insulating surface to room temperature or 300 ° C. or lower. In any one of claims 6 to 10, wherein the metal element is Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, that is one or more kinds selected from Au A method for manufacturing a semiconductor device.   12. The compressive stress of the second semiconductor film according to claim 6, wherein the compressive stress of the second semiconductor film is − 10.0 × 10 ^Ten dynes / cm ² ~ -5.0 × 10 ⁹ dynes / cm ² A method for manufacturing a semiconductor device.