JP2002313811A5

JP2002313811A5 -

Info

Publication number: JP2002313811A5
Application number: JP2002020801A
Authority: JP
Filing date: 2002-01-29
Publication date: 2005-08-11
Anticipated expiration: 2022-01-29

Claims

A semiconductor film having a crystalline structure on an insulating surface is formed, the concentration of oxygen contained in the semiconductor film is 5 × 10 ¹⁸ / cm ³ and less, Oite the inner portion of the semiconductor film, a rare gas element is A semiconductor device having a region included at a concentration of 1 × 10 ¹³ to 1 × 10 ²⁰ / cm ³ .

A semiconductor film having a crystalline structure on an insulating surface is formed, the semiconductor film is a thin rod-like or thin flat rod-shaped crystals, the concentration of oxygen contained in said semiconductor film is 5 × 10 ¹⁸ / cm ³ and less, the Oite the inner portion of the semiconductor film, a semiconductor device characterized by having a region that contains a concentration of the rare gas element is ^{^{1 × 10 13 ~1 × 10 20}} / cm 3.

A semiconductor film having a crystalline structure on an insulating surface, possess a gate insulating film, a gate electrode, the semiconductor film in a region overlapping with the gate electrode, oxygen at a concentration of 5 × 10 ¹⁸ / cm ³ or less wherein, and a semiconductor device which comprises said Oite the inner portion of the semiconductor film, the region rare gas element is contained at a concentration of ^{^{1 × 10 13 ~1 × 10 20}} / cm 3.

A semiconductor film having a crystalline structure on an insulating surface, possess a gate insulating film, a gate electrode, said semiconductor film is a thin rod-like or thin flattened rod-like crystals in a region overlapping with the gate electrode, oxygen 5 × includes 10 ¹⁸ / cm ³ at a concentration, and has a region Oite the internal, rare gas element is contained at a concentration of ^{^{1 × 10 13 ~1 × 10 20}} / cm 3 of the semiconductor film A semiconductor device.

In any one of claims 1乃optimum 4, wherein the rare gas element is a semiconductor device comprising He, Ne, Ar, Kr, that is one or more kinds selected from Xe.

As a main component silicon over a substrate having an insulating surface to form a first semiconductor film having an amorphous structure,
By adding a catalyst element for promoting crystallization of silicon in the first semiconductor film, a first semiconductor film having a crystalline structure is formed by the first heat treatment,
Forming a barrier layer on the surface of the first semiconductor film having the crystal structure;
The second semiconductor film is formed on the barrier layer,
Was added a rare gas element in the second semiconductor layer on the deposition and simultaneously or thereafter, the catalyst element carried gettering is moved to the second semiconductor film by the second heat treatment,
Removing the second semiconductor layer,
The method for manufacturing a semiconductor device comprising the Turkey to remove the barrier layer.

As a main component silicon over a substrate having an insulating surface to form a first semiconductor film having an amorphous structure,
By adding a catalyst element for promoting crystallization of silicon in the first semiconductor film, a first semiconductor film having a crystalline structure is formed by the first heat treatment,
Irradiating the first semiconductor film laser beam having a crystal structure,
Forming a barrier layer on the surface of the first semiconductor film having the crystal structure;
The second semiconductor film is formed on the barrier layer,
Was added a rare gas element in the second semiconductor layer on the deposition and simultaneously or thereafter, the catalyst element carried gettering is moved to the second semiconductor film by the second heat treatment,
Removing the second semiconductor layer,
The method for manufacturing a semiconductor device comprising the Turkey to remove the barrier layer.

Forming a first semiconductor film containing silicon as a main component and having an amorphous structure over a substrate having an insulating surface;
Adding a catalyst element for promoting crystallization of silicon to the first semiconductor film, and forming a first semiconductor film having a crystal structure by a first heat treatment;
Forming a barrier layer on the surface of the first semiconductor film having the crystal structure;
Forming a second semiconductor film on the barrier layer;
A rare gas element is added to the second semiconductor film simultaneously with or after the film formation, and gettering is performed by a second heat treatment to move the catalyst element to the second semiconductor film,
Removing the second semiconductor film;
Removing the barrier layer;
A method for manufacturing a semiconductor device, wherein the first semiconductor film having the crystal structure is irradiated with laser light.

9. The heat treatment according to claim 6 , wherein the first heat treatment includes radiation from one or more kinds selected from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, and a high pressure mercury lamp. A method for manufacturing a semiconductor device, characterized in that:

9. The method for manufacturing a semiconductor device according to claim 6 , wherein the first heat treatment is performed by a furnace annealing method using an electric furnace.

11. The heat treatment according to claim 6 , wherein the second heat treatment includes radiation from one or more kinds selected from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, and a high pressure mercury lamp. A method for manufacturing a semiconductor device, characterized in that:

11. The method for manufacturing a semiconductor device according to claim 6 , wherein the second heat treatment is performed by a furnace annealing method using an electric furnace.

Forming a first semiconductor film containing silicon as a main component and having an amorphous structure over a substrate having an insulating surface;
Adding a catalyst element for promoting crystallization of silicon to the first semiconductor film having the amorphous structure;
Forming a barrier layer on the surface of the first semiconductor film having the amorphous structure;
Forming a second semiconductor film on the barrier layer;
Adding a rare gas element to the second semiconductor film simultaneously with or after the film formation;
By heat treatment, the first semiconductor film having an amorphous structure is crystallized to form a first semiconductor film having a crystalline structure, and the catalytic element is moved to the second semiconductor film,
Removing the second semiconductor film;
Removing the barrier layer;
A method for manufacturing a semiconductor device, wherein the first semiconductor film having the crystal structure is irradiated with laser light.

Add a catalytic element to promote crystallization of silicon on the insulating surface,
Forming a first semiconductor film containing silicon as a main component and having an amorphous structure on the substrate having an insulating surface;
Forming a barrier layer on the surface of the first semiconductor film having the amorphous structure;
Forming a second semiconductor film on the first semiconductor film having the amorphous structure;
Adding a rare gas element to the second semiconductor film simultaneously with or after the film formation;
By heat treatment, the first semiconductor film having an amorphous structure is crystallized to form a first semiconductor film having a crystalline structure, and the catalytic element is moved to the second semiconductor film,
Removing the second semiconductor film;
Removing the barrier layer;
A method for manufacturing a semiconductor device, wherein the first semiconductor film having the crystal structure is irradiated with laser light.

In Claim 13 or Claim 14, the heat treatment is performed by radiation from one or more kinds selected from a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure sodium lamp, and a high pressure mercury lamp. A method for manufacturing a semiconductor device.

15. The method for manufacturing a semiconductor device according to claim 13, wherein the heat treatment is performed by a furnace annealing method using an electric heating furnace.

The method for manufacturing a semiconductor device according to claim 6 , wherein the barrier layer is formed using ozone water.

The method for manufacturing a semiconductor device according to claim 6 , wherein the barrier layer is formed by oxidizing a surface by plasma treatment.

17. The method for manufacturing a semiconductor device according to claim 6 , wherein the barrier layer is formed by irradiating ultraviolet rays in an atmosphere containing oxygen to generate ozone to oxidize the surface.

20. The method for manufacturing a semiconductor device according to claim 6 , wherein the rare gas element is one or a plurality selected from He, Ne, Ar, Kr, and Xe.

21. The method for manufacturing a semiconductor device according to claim 6 , wherein the rare gas element is added by an ion implantation method or an ion doping method.

22. The catalyst element according to claim 6 , wherein the catalyst element is one or more selected from Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. A method for manufacturing a semiconductor device.