JP2002305148A5 - - Google Patents

Claims (8)

Forming a first semiconductor film on the substrate;
The metal element is introduced into the first semiconductor film,
A first heat treatment is performed on the first semiconductor film to form a second semiconductor film;
Irradiating the second semiconductor film with laser light to form a third semiconductor film having a plurality of protrusions;
Irradiating infrared light, visible light, or ultraviolet light to the third semiconductor film, the second semiconductor film is subjected to a second heat treatment to set the temperature of the third semiconductor film to 700 to 750 ° C., and the fourth semiconductor film A method for manufacturing a semiconductor device, comprising: forming a semiconductor device. Forming an amorphous semiconductor film on the substrate;
Introducing a metal element into the amorphous semiconductor film;
First forming a crystalline semiconductor film by performing first heat treatment on the amorphous semiconductor film,
Irradiating the crystalline semiconductor film with laser light to form a crystalline semiconductor film having a plurality of convex portions,
A second heat treatment is performed to irradiate the crystalline semiconductor film having the convex portions with infrared light, visible light, or ultraviolet light so that the temperature of the crystalline semiconductor film having the convex portions is 700 to 750 ° C. A method for manufacturing a semiconductor device, comprising forming a second crystalline semiconductor film. Oite to claim 1 or 2, wherein the infrared light, visible light, or ultraviolet light, from above the substrate, a semiconductor, characterized in that it is irradiated from above and below the lower or from the substrate of the substrate Device fabrication method. In any one of claims 1 to 3, wherein the second heating heating time processes, the method for manufacturing a semiconductor device, characterized in that within 5 minutes. In any one of claims 1 to 4, wherein the infrared light, visible light, or ultraviolet light, a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, is emitted from the high-pressure sodium lamp or a high pressure mercury lamp, A method for manufacturing a semiconductor device, which is characterized by being light. In any one of claims 1 to 5, the atmosphere in the processing chamber at the time of irradiating the infrared light, visible light, or ultraviolet light, a method for manufacturing a semiconductor device which is a reducing gas. 7. The semiconductor device according to claim 1 , wherein the laser light is light emitted from an excimer laser, a YAG laser, a YVO ₄ laser, a YAlO ₃ laser, or a YLF laser. Method. The method for manufacturing a semiconductor device according to claim 1 , wherein the metal element is nickel .