JP2002190452A5 - - Google Patents

Claims (15)

A heat treatment method for heating an object to be processed by radiation of a lamp light source, wherein a light emission time per time of the lamp light source is 0.1 to 20 seconds, and the radiation of the lamp light source is repeated a plurality of times. Heat treatment method. A heat treatment method for heating an object to be processed by radiation of a lamp light source, wherein the radiation of the lamp light source is repeated in a pulsed manner so that the maximum temperature holding time of the irradiated region is 0.5 to 5 seconds. A heat treatment method. A heat treatment method of holding an object to be processed in a processing chamber filled with a refrigerant and heating the object to be processed by radiation of a lamp light source, wherein the radiation per lamp light source is 0.1 to 20 seconds. A heat treatment method characterized by holding the period and repeating the radiation of the lamp light source a plurality of times. A heat treatment method for holding an object to be processed in a processing chamber filled with a refrigerant and heating the object to be processed by radiation of a lamp light source, wherein the maximum temperature holding time of the object to be processed is 0.5 to 5 seconds. A heat treatment method characterized by repeating the radiation of the lamp light source a plurality of times. A heat treatment method for holding an object to be processed in a processing chamber filled with a refrigerant and heating the object to be processed by radiation of a lamp light source, reducing the supply amount of the refrigerant, turning on the lamp light source, Radiation per one time of the lamp light source is maintained for a period of 0.1 to 20 seconds, the lamp light source is turned off, and the process of increasing the supply amount of the refrigerant is set as one cycle, and the process is repeated a plurality of times. A heat treatment method characterized by the above. A heat treatment method for holding an object to be processed in a processing chamber filled with a refrigerant and heating the object to be processed by radiation of a lamp light source, reducing the supply amount of the refrigerant, turning on the lamp light source, After the holding time of the maximum temperature of the object to be processed is held for 0.5 to 5 seconds, the lamp light source is turned off, and the process for simultaneously increasing the supply amount of the refrigerant is set as one cycle, and the process is repeated a plurality of times. A heat treatment method characterized. 7. The heat treatment method according to claim 1, wherein the lamp light source is any one of a halogen lamp, a metal halide lamp, a xenon lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, and an excimer lamp. The semiconductor film is formed on the transparent substrate, wherein the semiconductor and insulation Enmaku formed on the membrane, prior to forming a conductive film on the Kize' border membrane, one doped with one conductivity type impurity into said semiconductor film conductivity type semiconductor region is formed to activate the semiconductor region of the one conductivity type by intermittently irradiating multiple radiation from the lamp light source from the light transmitting substrate side,
A method for manufacturing a semiconductor device, characterized in that intermittent irradiation from the lamp light source is performed for 0.1 to 20 seconds . The semiconductor film is formed on the transparent substrate, wherein the semiconductor film insulation Enmaku is formed on the front of the light-absorbing first conductive film is formed on Kize' border membrane, light on the first conductive film reflectivity of the second conductive film is formed, the by semiconductor film doped with an impurity of one conductivity type to form a semiconductor region of one conductivity type, intermittent radiation from the lamp light source from the light transmissive substrate side the method for manufacturing a semiconductor device by irradiating a plurality of times, wherein the benzalkonium be activated semiconductor regions of the one conductivity type. An amorphous semiconductor film formed on one main surface of the transparent substrate, wherein the amorphous semiconductor film is crystallized after addition of a metal element to form a crystalline semiconductor film, above the crystalline semiconductor film Forming a conductive film overlapping with a part of the crystalline semiconductor film, forming a one-conductivity-type semiconductor region in the crystalline semiconductor film, and forming a lamp from a surface opposite to the one main surface of the translucent substrate; Irradiate radiation from the light source multiple times intermittently ,
A method for manufacturing a semiconductor device, characterized in that intermittent irradiation from the lamp light source is performed for 0.1 to 20 seconds . An amorphous semiconductor film formed on one main surface of the transparent substrate, wherein the amorphous semiconductor film is crystallized after addition of a metal element to form a crystalline semiconductor film, above the crystalline semiconductor film , a conductive film which overlaps with a portion of the crystalline semiconductor film, the crystalline semiconductor film phosphorous forms a semiconductor region that is added to, from the opposite side surface and the light-transmitting one principal surface of the substrate Irradiate radiation from the lamp light source multiple times intermittently ,
A method for manufacturing a semiconductor device, characterized in that intermittent irradiation from the lamp light source is performed for 0.1 to 20 seconds. A semiconductor film is formed over the light-transmitting substrate, an insulating film is formed over the semiconductor film, a light-absorbing first conductive film is formed over the insulating film, and a light-reflective film is formed over the first conductive film. Forming a second conductive film; doping the semiconductor film with one conductivity type impurity to form a one conductivity type semiconductor region; supplying a coolant to the light transmitting substrate in a processing chamber; Radiation from the lamp light source is intermittently irradiated several times from the side to activate the semiconductor region of one conductivity type, and intermittent irradiation from the lamp light source is 0.1 to 20 seconds. A method for manufacturing a semiconductor device. A semiconductor film is formed over the light-transmitting substrate, an insulating film is formed over the semiconductor film, a light-absorbing first conductive film is formed over the insulating film, and a light-reflective film is formed over the first conductive film. Forming a second conductive film; doping the semiconductor film with one conductivity type impurity to form a one conductivity type semiconductor region; supplying a coolant to the light transmitting substrate in a processing chamber; Radiating the radiation from the lamp light source from the side intermittently multiple times to activate the semiconductor region of one conductivity type,
Intermittent irradiation from the lamp light source turns on the lamp light source and decreases the supply amount of the refrigerant, and the lamp light source lights up for 0.1 to 20 seconds at a time. The method for manufacturing a semiconductor device is characterized in that the process of increasing the supply amount of the refrigerant is made one cycle while shutting off. 12. The semiconductor according to claim 10, wherein the metal element is one or more selected from Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. Device fabrication method. 15. The semiconductor device according to claim 8, wherein the lamp light source is any one of a halogen lamp, a metal halide lamp, a xenon lamp, a high-pressure mercury lamp, a high-pressure sodium lamp, and an excimer lamp. Manufacturing method.